DE68915395D1 - Dynamische Speicheranordnung mit verbessertem Leitungsnetz. - Google Patents
Dynamische Speicheranordnung mit verbessertem Leitungsnetz.Info
- Publication number
- DE68915395D1 DE68915395D1 DE68915395T DE68915395T DE68915395D1 DE 68915395 D1 DE68915395 D1 DE 68915395D1 DE 68915395 T DE68915395 T DE 68915395T DE 68915395 T DE68915395 T DE 68915395T DE 68915395 D1 DE68915395 D1 DE 68915395D1
- Authority
- DE
- Germany
- Prior art keywords
- storage arrangement
- dynamic storage
- pipeline network
- improved pipeline
- improved
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0207—Geometrical layout of the components, e.g. computer aided design; custom LSI, semi-custom LSI, standard cell technique
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/409—Read-write [R-W] circuits
- G11C11/4097—Bit-line organisation, e.g. bit-line layout, folded bit lines
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
- Y10S257/922—Active solid-state devices, e.g. transistors, solid-state diodes with means to prevent inspection of or tampering with an integrated circuit, e.g. "smart card", anti-tamper
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63289259A JPH07109878B2 (ja) | 1988-11-16 | 1988-11-16 | 半導体記憶装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE68915395D1 true DE68915395D1 (de) | 1994-06-23 |
DE68915395T2 DE68915395T2 (de) | 1994-10-06 |
Family
ID=17740841
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE68915395T Expired - Fee Related DE68915395T2 (de) | 1988-11-16 | 1989-10-19 | Dynamische Speicheranordnung mit verbessertem Leitungsnetz. |
Country Status (5)
Country | Link |
---|---|
US (1) | US4941031A (de) |
EP (1) | EP0369183B1 (de) |
JP (1) | JPH07109878B2 (de) |
KR (1) | KR930000766B1 (de) |
DE (1) | DE68915395T2 (de) |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5194752A (en) * | 1989-05-23 | 1993-03-16 | Kabushiki Kaisha Toshiba | Semiconductor memory device |
JP2953708B2 (ja) * | 1989-07-31 | 1999-09-27 | 株式会社東芝 | ダイナミック型半導体記憶装置 |
JPH0713864B2 (ja) * | 1989-09-27 | 1995-02-15 | 東芝マイクロエレクトロニクス株式会社 | 半導体記憶装置 |
EP0496406B1 (de) * | 1991-01-25 | 1999-05-06 | Nec Corporation | Halbleiterspeicheranordnung |
JPH0669208A (ja) * | 1991-03-12 | 1994-03-11 | Oki Electric Ind Co Ltd | 半導体装置 |
US5639690A (en) * | 1991-03-12 | 1997-06-17 | Oki Electric Industry Co., Ltd. | Method for manufacturing a conductive pattern structure for a semiconductor device |
US5170243A (en) * | 1991-11-04 | 1992-12-08 | International Business Machines Corporation | Bit line configuration for semiconductor memory |
EP0713251B1 (de) * | 1992-11-18 | 1999-01-07 | Fuji Electric Co. Ltd. | Halbleiter-Umwandlungsvorrichtung |
KR100298871B1 (ko) * | 1993-06-02 | 2001-11-22 | 김영환 | 반도체 메모리 장치의 비트라인 구조 |
US5485419A (en) * | 1994-05-23 | 1996-01-16 | Campbell; John P. | Memory device column address selection lead layout |
US5670815A (en) * | 1994-07-05 | 1997-09-23 | Motorola, Inc. | Layout for noise reduction on a reference voltage |
US5636158A (en) * | 1995-03-13 | 1997-06-03 | Kabushiki Kaisha Toshiba | Irregular pitch layout for a semiconductor memory device |
US5899706A (en) * | 1997-06-30 | 1999-05-04 | Siemens Aktiengesellschaft | Method of reducing loading variation during etch processing |
JP2000216264A (ja) | 1999-01-22 | 2000-08-04 | Mitsubishi Electric Corp | Cmos論理回路素子、半導体装置とその製造方法およびその製造方法において用いる半導体回路設計方法 |
JP2002190532A (ja) * | 2000-12-19 | 2002-07-05 | Hitachi Ltd | 半導体記憶装置 |
JP2008004889A (ja) * | 2006-06-26 | 2008-01-10 | Samsung Electronics Co Ltd | 半導体記憶装置 |
JP2008227171A (ja) * | 2007-03-13 | 2008-09-25 | Toshiba Corp | 不揮発性半導体メモリ |
US7948094B2 (en) * | 2007-10-22 | 2011-05-24 | Rohm Co., Ltd. | Semiconductor device |
KR102635666B1 (ko) * | 2018-08-16 | 2024-02-14 | 에스케이하이닉스 주식회사 | 반도체 메모리 장치 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5349969A (en) * | 1976-10-18 | 1978-05-06 | Hitachi Ltd | Semiconductor memory unit |
US4319342A (en) * | 1979-12-26 | 1982-03-09 | International Business Machines Corporation | One device field effect transistor (FET) AC stable random access memory (RAM) array |
JPS5772348A (en) * | 1980-10-24 | 1982-05-06 | Nec Corp | Wiring structure in integrated circuit |
JPS59231852A (ja) * | 1983-06-15 | 1984-12-26 | Hitachi Ltd | 半導体装置 |
JPH0714006B2 (ja) * | 1985-05-29 | 1995-02-15 | 株式会社東芝 | ダイナミツク型メモリ |
JPS6211262A (ja) * | 1985-07-08 | 1987-01-20 | Nec Ic Microcomput Syst Ltd | 半導体記憶装置 |
JPS6265300A (ja) * | 1985-09-18 | 1987-03-24 | Toshiba Corp | 半導体記憶装置 |
JPS6276761A (ja) * | 1985-09-30 | 1987-04-08 | Toshiba Corp | 半導体装置 |
JPH0766659B2 (ja) * | 1986-01-30 | 1995-07-19 | 三菱電機株式会社 | 半導体記憶装置 |
JPS6367771A (ja) * | 1986-09-09 | 1988-03-26 | Mitsubishi Electric Corp | 半導体記憶装置 |
JPS63183691A (ja) * | 1987-01-26 | 1988-07-29 | Mitsubishi Electric Corp | 半導体記憶装置 |
-
1988
- 1988-11-16 JP JP63289259A patent/JPH07109878B2/ja not_active Expired - Fee Related
-
1989
- 1989-10-03 US US07/416,604 patent/US4941031A/en not_active Expired - Lifetime
- 1989-10-19 DE DE68915395T patent/DE68915395T2/de not_active Expired - Fee Related
- 1989-10-19 EP EP89119421A patent/EP0369183B1/de not_active Expired - Lifetime
- 1989-11-16 KR KR1019890016607A patent/KR930000766B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
US4941031A (en) | 1990-07-10 |
EP0369183A3 (de) | 1991-01-23 |
JPH02134868A (ja) | 1990-05-23 |
JPH07109878B2 (ja) | 1995-11-22 |
EP0369183B1 (de) | 1994-05-18 |
KR930000766B1 (ko) | 1993-02-01 |
DE68915395T2 (de) | 1994-10-06 |
KR900008521A (ko) | 1990-06-03 |
EP0369183A2 (de) | 1990-05-23 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |