JP2008004889A - 半導体記憶装置 - Google Patents
半導体記憶装置 Download PDFInfo
- Publication number
- JP2008004889A JP2008004889A JP2006175551A JP2006175551A JP2008004889A JP 2008004889 A JP2008004889 A JP 2008004889A JP 2006175551 A JP2006175551 A JP 2006175551A JP 2006175551 A JP2006175551 A JP 2006175551A JP 2008004889 A JP2008004889 A JP 2008004889A
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- Prior art keywords
- wiring
- memory cell
- bit lines
- memory device
- semiconductor memory
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 24
- 230000008878 coupling Effects 0.000 claims abstract description 17
- 238000010168 coupling process Methods 0.000 claims abstract description 17
- 238000005859 coupling reaction Methods 0.000 claims abstract description 17
- 230000002093 peripheral effect Effects 0.000 claims description 23
- 238000005452 bending Methods 0.000 claims description 5
- 239000011159 matrix material Substances 0.000 claims description 3
- 238000010586 diagram Methods 0.000 description 7
- 230000005540 biological transmission Effects 0.000 description 4
- 102100039372 Calcium uniporter regulatory subunit MCUb, mitochondrial Human genes 0.000 description 2
- 101710198755 Calcium uniporter regulatory subunit MCUb, mitochondrial Proteins 0.000 description 2
- 230000003111 delayed effect Effects 0.000 description 2
- 230000008054 signal transmission Effects 0.000 description 2
- 238000011835 investigation Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
- H01L27/105—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/18—Bit line organisation; Bit line lay-out
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C8/00—Arrangements for selecting an address in a digital store
- G11C8/14—Word line organisation; Word line lay-out
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/5222—Capacitive arrangements or effects of, or between wiring layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Memories (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
- Read Only Memory (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
【解決手段】信号の送出点Aと受信点Bとの間にメモリセル領域を横切って配線を行う。A−B間の配線700は、ビットラインBL0〜BL4の各々の上の2箇所で屈曲する。このとき、配線700とビットラインBL0〜BL4とが並走する面積は各ビットラインについて均等になるので、配線700と各ビットラインBL0〜BL4との間の結合容量が均一化される。したがって、いずれかのビットラインにのみ負荷が偏る事態を回避し、リード特性に影響を及ぼさないようにすることができる。
【選択図】図7
Description
したがって、周辺回路間の配線はメモリセル領域を通過しないように設けられる。図4を参照してこれを説明すると、同図においては周辺回路の例としてチップ20上に2つのDSP(Digital Signal Processor)a211およびDSPb212と、2つのMCU(Memory Control Unit)a213およびMCUb214とが示されている。
発明者は本発明にあたってメモリセル領域を横切る配線について先行技術の調査を行ったが、本発明と類似する配線に関する技術を発見することはできなかった。
屈曲点の総数は、ビットラインの総数の整数倍以上である。
また、この半導体記憶装置において、配線は、第1の周辺回路と第2の周辺回路との間のメモリセル領域上に直線状に延伸してもよい。
まず、本発明の第一の実施形態を説明する。図6には、この実施形態における複数のビットラインBL0〜BL4と、接続しようとする信号の送出点Aおよび受信点Bとが示されている。
なお、本発明の好適な実施形態として3つの例を挙げて説明したが、本発明はこれに限定されることなく、様々な他の形態で実施することが可能である。
20 チップ
111 メモリa
112 メモリb
211 DSPa
212 DSPb
213 MCUa
214 MCUb
BL0〜BL4 ビットライン
700 配線
Claims (4)
- 行列状に配列された複数のメモリセルからなり複数のワードラインと複数のビットラインとを有するメモリセル領域を備え、前記メモリセル領域上を横断する配線によって前記メモリセル領域の周辺領域に配置された第1の周辺回路と第2の周辺回路とを接続する半導体記憶装置において、
前記配線は、前記配線と前記複数のビットラインの各々との間の結合容量が均一になるように設けられることを特徴とする半導体記憶装置。 - 請求項1に記載の半導体記憶装置において、
前記配線は、前記各ビットライン上にそれぞれ複数の屈曲点を有し、前記配線と前記各ビットラインとが並走する面積が前記各ビットラインについて同一であることを特徴とする半導体記憶装置。 - 請求項2に記載の半導体記憶装置において、
前記屈曲点の総数は、前記ビットラインの総数の整数倍以上であることを特徴とする半導体記憶装置。 - 請求項1に記載の半導体記憶装置において、
前記配線は、前記第1の周辺回路と前記第2の周辺回路との間の前記メモリセル領域上に直線状に延伸することを特徴とする半導体記憶装置。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006175551A JP2008004889A (ja) | 2006-06-26 | 2006-06-26 | 半導体記憶装置 |
KR1020070048120A KR100836768B1 (ko) | 2006-06-26 | 2007-05-17 | 반도체 기억장치 |
US11/819,174 US7613022B2 (en) | 2006-06-26 | 2007-06-26 | Semiconductor memory device and method of forming the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006175551A JP2008004889A (ja) | 2006-06-26 | 2006-06-26 | 半導体記憶装置 |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2008004889A true JP2008004889A (ja) | 2008-01-10 |
Family
ID=38872757
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006175551A Pending JP2008004889A (ja) | 2006-06-26 | 2006-06-26 | 半導体記憶装置 |
Country Status (3)
Country | Link |
---|---|
US (1) | US7613022B2 (ja) |
JP (1) | JP2008004889A (ja) |
KR (1) | KR100836768B1 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009302425A (ja) * | 2008-06-17 | 2009-12-24 | Sanyo Electric Co Ltd | 半導体記憶装置 |
WO2017149845A1 (ja) * | 2016-02-29 | 2017-09-08 | ソニー株式会社 | 半導体装置 |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011014610A (ja) * | 2009-06-30 | 2011-01-20 | Toshiba Corp | 半導体記憶装置 |
KR102393976B1 (ko) | 2015-05-20 | 2022-05-04 | 삼성전자주식회사 | 반도체 메모리 소자 |
US9997242B2 (en) * | 2016-10-14 | 2018-06-12 | Arm Ltd. | Method, system and device for non-volatile memory device state detection |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02134868A (ja) * | 1988-11-16 | 1990-05-23 | Toshiba Corp | 半導体記憶装置 |
JPH07335769A (ja) * | 1994-06-10 | 1995-12-22 | Matsushita Electric Ind Co Ltd | 半導体集積回路 |
JPH0974172A (ja) * | 1995-09-07 | 1997-03-18 | Fujitsu Ltd | 半導体装置 |
JP2005333123A (ja) * | 2004-05-18 | 2005-12-02 | Samsung Electronics Co Ltd | セルアレイを横切って配線された信号ラインを有する半導体メモリ装置 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3097627B2 (ja) | 1997-11-05 | 2000-10-10 | 日本電気株式会社 | 半導体記憶装置 |
KR20020078432A (ko) * | 2001-04-09 | 2002-10-18 | 삼성전자 주식회사 | 반도체 메모리 장치의 제조 방법 |
KR100800469B1 (ko) | 2005-10-05 | 2008-02-01 | 삼성전자주식회사 | 매몰 비트 라인에 접속된 수직형 트랜지스터를 포함하는회로 소자 및 제조 방법 |
-
2006
- 2006-06-26 JP JP2006175551A patent/JP2008004889A/ja active Pending
-
2007
- 2007-05-17 KR KR1020070048120A patent/KR100836768B1/ko not_active IP Right Cessation
- 2007-06-26 US US11/819,174 patent/US7613022B2/en not_active Expired - Fee Related
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02134868A (ja) * | 1988-11-16 | 1990-05-23 | Toshiba Corp | 半導体記憶装置 |
JPH07335769A (ja) * | 1994-06-10 | 1995-12-22 | Matsushita Electric Ind Co Ltd | 半導体集積回路 |
JPH0974172A (ja) * | 1995-09-07 | 1997-03-18 | Fujitsu Ltd | 半導体装置 |
JP2005333123A (ja) * | 2004-05-18 | 2005-12-02 | Samsung Electronics Co Ltd | セルアレイを横切って配線された信号ラインを有する半導体メモリ装置 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009302425A (ja) * | 2008-06-17 | 2009-12-24 | Sanyo Electric Co Ltd | 半導体記憶装置 |
WO2017149845A1 (ja) * | 2016-02-29 | 2017-09-08 | ソニー株式会社 | 半導体装置 |
JPWO2017149845A1 (ja) * | 2016-02-29 | 2018-12-20 | ソニー株式会社 | 半導体装置 |
Also Published As
Publication number | Publication date |
---|---|
US20070295999A1 (en) | 2007-12-27 |
KR20070122361A (ko) | 2007-12-31 |
KR100836768B1 (ko) | 2008-06-10 |
US7613022B2 (en) | 2009-11-03 |
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