DE60315933D1 - Polierzusammensetzung und Polierverfahren unter deren Verwendung - Google Patents

Polierzusammensetzung und Polierverfahren unter deren Verwendung

Info

Publication number
DE60315933D1
DE60315933D1 DE60315933T DE60315933T DE60315933D1 DE 60315933 D1 DE60315933 D1 DE 60315933D1 DE 60315933 T DE60315933 T DE 60315933T DE 60315933 T DE60315933 T DE 60315933T DE 60315933 D1 DE60315933 D1 DE 60315933D1
Authority
DE
Germany
Prior art keywords
polishing
composition
polishing composition
polishing method
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60315933T
Other languages
English (en)
Other versions
DE60315933T2 (de
Inventor
Shuhei Yamada
Akihiro Kawase
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujimi Inc
Original Assignee
Fujimi Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujimi Inc filed Critical Fujimi Inc
Publication of DE60315933D1 publication Critical patent/DE60315933D1/de
Application granted granted Critical
Publication of DE60315933T2 publication Critical patent/DE60315933T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1409—Abrasive particles per se
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
DE60315933T 2002-09-30 2003-09-29 Polierzusammensetzung und Polierverfahren unter deren Verwendung Expired - Lifetime DE60315933T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2002287448A JP4593064B2 (ja) 2002-09-30 2002-09-30 研磨用組成物及びそれを用いた研磨方法
JP2002287448 2002-09-30

Publications (2)

Publication Number Publication Date
DE60315933D1 true DE60315933D1 (de) 2007-10-11
DE60315933T2 DE60315933T2 (de) 2008-06-12

Family

ID=31973445

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60315933T Expired - Lifetime DE60315933T2 (de) 2002-09-30 2003-09-29 Polierzusammensetzung und Polierverfahren unter deren Verwendung

Country Status (5)

Country Link
US (1) US7481950B2 (de)
EP (1) EP1403351B1 (de)
JP (1) JP4593064B2 (de)
KR (1) KR101062618B1 (de)
DE (1) DE60315933T2 (de)

Families Citing this family (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004128069A (ja) * 2002-09-30 2004-04-22 Fujimi Inc 研磨用組成物及びそれを用いた研磨方法
JP4668528B2 (ja) * 2003-09-05 2011-04-13 株式会社フジミインコーポレーテッド 研磨用組成物
JP2005268664A (ja) * 2004-03-19 2005-09-29 Fujimi Inc 研磨用組成物
JP2005268667A (ja) * 2004-03-19 2005-09-29 Fujimi Inc 研磨用組成物
JP2005286048A (ja) * 2004-03-29 2005-10-13 Nitta Haas Inc 半導体研磨用組成物
JP2006005246A (ja) * 2004-06-18 2006-01-05 Fujimi Inc リンス用組成物及びそれを用いたリンス方法
JP4814502B2 (ja) * 2004-09-09 2011-11-16 株式会社フジミインコーポレーテッド 研磨用組成物及びそれを用いた研磨方法
JP2006086462A (ja) * 2004-09-17 2006-03-30 Fujimi Inc 研磨用組成物およびそれを用いた配線構造体の製造法
JP4808394B2 (ja) * 2004-10-29 2011-11-02 株式会社フジミインコーポレーテッド 研磨用組成物
JP5121128B2 (ja) * 2005-06-20 2013-01-16 ニッタ・ハース株式会社 半導体研磨用組成物
JP2006352043A (ja) * 2005-06-20 2006-12-28 Nitta Haas Inc 半導体研磨用組成物
JP2007214205A (ja) * 2006-02-07 2007-08-23 Fujimi Inc 研磨用組成物
CN100462203C (zh) * 2006-06-09 2009-02-18 河北工业大学 Ulsi多层铜布线化学机械抛光中粗糙度的控制方法
JP5335183B2 (ja) * 2006-08-24 2013-11-06 株式会社フジミインコーポレーテッド 研磨用組成物及び研磨方法
JP5204960B2 (ja) * 2006-08-24 2013-06-05 株式会社フジミインコーポレーテッド 研磨用組成物及び研磨方法
US8017524B2 (en) * 2008-05-23 2011-09-13 Cabot Microelectronics Corporation Stable, high rate silicon slurry
JP5474400B2 (ja) * 2008-07-03 2014-04-16 株式会社フジミインコーポレーテッド 半導体用濡れ剤、それを用いた研磨用組成物および研磨方法
JP5492603B2 (ja) * 2010-03-02 2014-05-14 株式会社フジミインコーポレーテッド 研磨用組成物及びそれを用いた研磨方法
CN103403123B (zh) 2011-01-26 2015-04-08 福吉米株式会社 研磨用组合物、使用其的研磨方法及基板的制造方法
JP2013004839A (ja) * 2011-06-20 2013-01-07 Shin Etsu Handotai Co Ltd シリコンウェーハの研磨方法
CN103890114B (zh) * 2011-10-24 2015-08-26 福吉米株式会社 研磨用组合物、使用了其的研磨方法和基板的制造方法
JP5548224B2 (ja) * 2012-03-16 2014-07-16 富士フイルム株式会社 半導体基板製品の製造方法及びエッチング液
US9133366B2 (en) * 2012-05-25 2015-09-15 Nissan Chemical Industries, Ltd. Polishing liquid composition for wafers
CN103897605A (zh) * 2012-12-27 2014-07-02 天津西美半导体材料有限公司 单面抛光机用蓝宝石衬底抛光液
US20150376464A1 (en) * 2013-02-13 2015-12-31 Fujimi Incorporated Polishing composition, method for producing polishing composition and method for producing polished article
JP6110681B2 (ja) * 2013-02-13 2017-04-05 株式会社フジミインコーポレーテッド 研磨用組成物、研磨用組成物製造方法および研磨物製造方法
US10717899B2 (en) 2013-03-19 2020-07-21 Fujimi Incorporated Polishing composition, method for producing polishing composition and polishing composition preparation kit
JP6314019B2 (ja) * 2014-03-31 2018-04-18 ニッタ・ハース株式会社 半導体基板の研磨方法
JP6389630B2 (ja) * 2014-03-31 2018-09-12 ニッタ・ハース株式会社 研磨用組成物
JP6389629B2 (ja) * 2014-03-31 2018-09-12 ニッタ・ハース株式会社 研磨用組成物
JP6482234B2 (ja) * 2014-10-22 2019-03-13 株式会社フジミインコーポレーテッド 研磨用組成物
JPWO2020009055A1 (ja) * 2018-07-04 2021-08-05 住友精化株式会社 研磨用組成物
JP7221479B2 (ja) * 2018-08-31 2023-02-14 日化精工株式会社 ダイシング加工用製剤及び加工処理液
EP3929154A4 (de) 2019-02-21 2022-04-06 Mitsubishi Chemical Corporation Kieselsäureteilchen und verfahren zu ihrer herstellung, kieselsol, polierzusammensetzung, polierverfahren, verfahren zur herstellung von halbleiter-wafern und verfahren zur herstellung von halbleiterbauelementen
CN115244658A (zh) * 2020-03-13 2022-10-25 福吉米株式会社 研磨用组合物及研磨方法

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Publication number Priority date Publication date Assignee Title
US3715842A (en) * 1970-07-02 1973-02-13 Tizon Chem Corp Silica polishing compositions having a reduced tendency to scratch silicon and germanium surfaces
DE2247067C3 (de) * 1972-09-26 1979-08-09 Wacker-Chemitronic Gesellschaft Fuer Elektronik-Grundstoffe Mbh, 8263 Burghausen Verwendung einer Poliersuspension zum schleierfreien Polieren von Halbleiteroberflächen
US4169337A (en) * 1978-03-30 1979-10-02 Nalco Chemical Company Process for polishing semi-conductor materials
US4310594A (en) * 1980-07-01 1982-01-12 Teijin Limited Composite sheet structure
US4462188A (en) * 1982-06-21 1984-07-31 Nalco Chemical Company Silica sol compositions for polishing silicon wafers
US4588421A (en) * 1984-10-15 1986-05-13 Nalco Chemical Company Aqueous silica compositions for polishing silicon wafers
US5352277A (en) * 1988-12-12 1994-10-04 E. I. Du Pont De Nemours & Company Final polishing composition
JP2714411B2 (ja) 1988-12-12 1998-02-16 イー・アイ・デュポン・ドゥ・ヌムール・アンド・カンパニー ウェハーのファイン研摩用組成物
JPH08113772A (ja) 1994-10-18 1996-05-07 Asahi Denka Kogyo Kk シリコンウェハ研磨剤組成物及びシリコンウェハ研磨剤用組成物
JPH08302338A (ja) * 1995-05-15 1996-11-19 Sony Corp スラリーおよびこれを用いた半導体装置の製造方法
JPH0982668A (ja) * 1995-09-20 1997-03-28 Sony Corp 研磨用スラリー及びこの研磨用スラリーを用いる研磨方法
DE69611653T2 (de) * 1995-11-10 2001-05-03 Tokuyama Corp Poliersuspensionen und Verfahren zu ihrer Herstellung
JPH10309660A (ja) 1997-05-07 1998-11-24 Tokuyama Corp 仕上げ研磨剤
JP4115562B2 (ja) 1997-10-14 2008-07-09 株式会社フジミインコーポレーテッド 研磨用組成物
JPH11214338A (ja) 1998-01-20 1999-08-06 Memc Kk シリコンウェハーの研磨方法
JP3810588B2 (ja) * 1998-06-22 2006-08-16 株式会社フジミインコーポレーテッド 研磨用組成物
JP2001118815A (ja) * 1999-10-22 2001-04-27 Speedfam Co Ltd 半導体ウェーハエッジ研磨用研磨組成物及び研磨加工方法
TWI296006B (de) 2000-02-09 2008-04-21 Jsr Corp
KR100398141B1 (ko) * 2000-10-12 2003-09-13 아남반도체 주식회사 화학적 기계적 연마 슬러리 조성물 및 이를 이용한반도체소자의 제조방법
JP3440419B2 (ja) * 2001-02-02 2003-08-25 株式会社フジミインコーポレーテッド 研磨用組成物およびそれを用いた研磨方法
US6685757B2 (en) * 2002-02-21 2004-02-03 Rodel Holdings, Inc. Polishing composition

Also Published As

Publication number Publication date
EP1403351B1 (de) 2007-08-29
EP1403351A1 (de) 2004-03-31
DE60315933T2 (de) 2008-06-12
KR20040028588A (ko) 2004-04-03
US20040127047A1 (en) 2004-07-01
JP4593064B2 (ja) 2010-12-08
JP2004128070A (ja) 2004-04-22
KR101062618B1 (ko) 2011-09-07
US7481950B2 (en) 2009-01-27

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Legal Events

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8364 No opposition during term of opposition