DE60239401D1 - Lithographische methode zur erzeugung eines elements - Google Patents

Lithographische methode zur erzeugung eines elements

Info

Publication number
DE60239401D1
DE60239401D1 DE60239401T DE60239401T DE60239401D1 DE 60239401 D1 DE60239401 D1 DE 60239401D1 DE 60239401 T DE60239401 T DE 60239401T DE 60239401 T DE60239401 T DE 60239401T DE 60239401 D1 DE60239401 D1 DE 60239401D1
Authority
DE
Germany
Prior art keywords
sub
pattern
layer
processing layer
patterned
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60239401T
Other languages
English (en)
Inventor
Peter Dirksen
Casparus A Juffermans
Wingerden Johannes Van
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Koninklijke Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninklijke Philips Electronics NV filed Critical Koninklijke Philips Electronics NV
Application granted granted Critical
Publication of DE60239401D1 publication Critical patent/DE60239401D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32139—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer using masks
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0035—Multiple processes, e.g. applying a further resist layer on an already in a previously step, processed pattern or textured surface

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Optical Integrated Circuits (AREA)
DE60239401T 2001-05-18 2002-05-16 Lithographische methode zur erzeugung eines elements Expired - Lifetime DE60239401D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP01201891 2001-05-18
PCT/IB2002/001733 WO2002095498A2 (en) 2001-05-18 2002-05-16 Lithographic method of manufacturing a device

Publications (1)

Publication Number Publication Date
DE60239401D1 true DE60239401D1 (de) 2011-04-21

Family

ID=8180345

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60239401T Expired - Lifetime DE60239401D1 (de) 2001-05-18 2002-05-16 Lithographische methode zur erzeugung eines elements

Country Status (9)

Country Link
US (2) US7037626B2 (de)
EP (1) EP1395877B1 (de)
JP (1) JP4504622B2 (de)
KR (1) KR100955293B1 (de)
CN (1) CN1295563C (de)
AT (1) ATE501463T1 (de)
DE (1) DE60239401D1 (de)
TW (1) TW565881B (de)
WO (1) WO2002095498A2 (de)

Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1295563C (zh) 2001-05-18 2007-01-17 皇家菲利浦电子有限公司 制造器件的光刻法
US20050164099A1 (en) * 2004-01-28 2005-07-28 Tito Gelsomini Method to overcome minimum photomask dimension rules
WO2005119768A1 (en) * 2004-06-04 2005-12-15 Koninklijke Philips Electronics N.V. Improved etch method
US8304180B2 (en) * 2004-09-14 2012-11-06 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7460209B2 (en) * 2005-03-28 2008-12-02 Intel Corporation Advanced mask patterning with patterning layer
US20070018286A1 (en) * 2005-07-14 2007-01-25 Asml Netherlands B.V. Substrate, lithographic multiple exposure method, machine readable medium
US7867693B1 (en) * 2006-03-03 2011-01-11 Kla-Tencor Technologies Corp. Methods for forming device structures on a wafer
US20070231710A1 (en) * 2006-03-30 2007-10-04 Texas Instruments Incorporated. Method and system for forming a photomask pattern
WO2007116362A1 (en) * 2006-04-07 2007-10-18 Nxp B.V. Method of manufacturing a semiconductor device
US7754394B2 (en) * 2006-11-14 2010-07-13 International Business Machines Corporation Method to etch chrome for photomask fabrication
CN101542390A (zh) 2006-11-14 2009-09-23 Nxp股份有限公司 用以增大特征空间密度的两次形成图案的光刻技术
US8435593B2 (en) * 2007-05-22 2013-05-07 Asml Netherlands B.V. Method of inspecting a substrate and method of preparing a substrate for lithography
DE102007028800B4 (de) * 2007-06-22 2016-11-03 Advanced Mask Technology Center Gmbh & Co. Kg Maskensubstrat, Photomaske und Verfahren zur Herstellung einer Photomaske
US8383324B2 (en) * 2007-07-18 2013-02-26 Taiwan Semiconductor Manufacturing Company, Ltd. Mask registration correction
US7829266B2 (en) * 2007-08-07 2010-11-09 Globalfoundries Inc. Multiple exposure technique using OPC to correct distortion
NL1035771A1 (nl) * 2007-08-20 2009-02-23 Asml Netherlands Bv Lithographic Method and Method for Testing a Lithographic Apparatus.
JP2009053605A (ja) * 2007-08-29 2009-03-12 Renesas Technology Corp 半導体装置の製造方法およびマスク
KR100919366B1 (ko) * 2007-12-28 2009-09-25 주식회사 하이닉스반도체 반도체 소자의 패턴 형성 방법
CN101957562B (zh) * 2009-03-26 2012-11-14 上海微电子装备有限公司 一种双曝光方法
US20120148942A1 (en) * 2010-12-13 2012-06-14 James Walter Blatchford Diagonal interconnect for improved process margin with off-axis illumination
US8440371B2 (en) 2011-01-07 2013-05-14 Micron Technology, Inc. Imaging devices, methods of forming same, and methods of forming semiconductor device structures
US8465885B2 (en) 2011-02-07 2013-06-18 International Business Machines Corporation Boundary layer formation and resultant structures
NL2009056A (en) * 2011-08-09 2013-02-12 Asml Netherlands Bv A lithographic model for 3d topographic wafers.
CN102983067B (zh) * 2011-09-07 2015-10-14 中国科学院微电子研究所 混合线条的制造方法
US20130126467A1 (en) * 2011-11-18 2013-05-23 Shenzhen China Star Optoelectronics Technology Co., Ltd. Method for manufacturing conductive lines with small line-to-line space
CN103676474B (zh) * 2013-12-17 2016-09-21 南京理工大学 一种微压印模具分体式的制造方法
DE112014005893B4 (de) * 2013-12-21 2023-02-16 Kla-Tencor Corporation Ein Verfahren zum Messen von Positionen von Strukturen auf einer Maske und dadurch Bestimmen von Fehlern bei der Herstellung von Masken
DE102016209616A1 (de) * 2016-06-01 2017-12-07 Carl Zeiss Smt Gmbh Verfahren und Vorrichtung zur Vorhersage des mit einer Maske bei Durchführung eines Lithographieprozesses erzielten Abbildungsergebnisses
WO2018039277A1 (en) 2016-08-22 2018-03-01 Magic Leap, Inc. Diffractive eyepiece
KR20230105178A (ko) * 2022-01-03 2023-07-11 삼성전자주식회사 반도체 장치 및 제조 방법

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL7606548A (nl) 1976-06-17 1977-12-20 Philips Nv Werkwijze en inrichting voor het uitrichten van een i.c.-patroon ten opzichte van een halfgelei- dend substraat.
NL186353C (nl) 1979-06-12 1990-11-01 Philips Nv Inrichting voor het afbeelden van een maskerpatroon op een substraat voorzien van een opto-elektronisch detektiestelsel voor het bepalen van een afwijking tussen het beeldvlak van een projektielenzenstelsel en het substraatvlak.
NL8600639A (nl) 1986-03-12 1987-10-01 Asm Lithography Bv Werkwijze voor het ten opzichte van elkaar uitrichten van een masker en een substraat en inrichting voor het uitvoeren van de werkwijze.
NL8601547A (nl) 1986-06-16 1988-01-18 Philips Nv Optisch litografische inrichting met verplaatsbaar lenzenstelsel en werkwijze voor het regelen van de afbeeldingseigenschappen van een lenzenstelsel in een dergelijke inrichting.
KR0168829B1 (ko) * 1989-11-06 1999-02-01 리차드 알. 피카드 복수의 개별 집적 회로를 단일 집적 회로화하는 방법
EP0433467B1 (de) * 1989-12-18 1995-08-16 International Business Machines Corporation Verfahren zur Herstellung von komplementären Mustern zur Exposition von Halbleiterkörpern mit selbsttragenden Masken
NL9100215A (nl) 1991-02-07 1992-09-01 Asm Lithography Bv Inrichting voor het repeterend afbeelden van een maskerpatroon op een substraat.
NL9100410A (nl) 1991-03-07 1992-10-01 Asm Lithography Bv Afbeeldingsapparaat voorzien van een focusfout- en/of scheefstandsdetectie-inrichting.
US5364716A (en) 1991-09-27 1994-11-15 Fujitsu Limited Pattern exposing method using phase shift and mask used therefor
JPH10512683A (ja) 1993-01-21 1998-12-02 セマテック，インコーポレーテッド 改善されたイメージングのために吸収／減衰性側壁を備えた移相マスク構造および吸収／減衰性側壁を備えたシフターを作る方法
GB2284300B (en) * 1993-11-10 1997-11-19 Hyundai Electronics Ind Process for forming fine pattern of semiconductor device
KR950015617A (ko) * 1993-11-15 1995-06-17 김주용 반도체소자의 미세패턴 제조방법
US5472814A (en) * 1994-11-17 1995-12-05 International Business Machines Corporation Orthogonally separated phase shifted and unphase shifted mask patterns for image improvement
JP3309713B2 (ja) * 1996-06-10 2002-07-29 松下電器産業株式会社 プリント配線基板
US6156149A (en) * 1997-05-07 2000-12-05 Applied Materials, Inc. In situ deposition of a dielectric oxide layer and anti-reflective coating
EP0980542A4 (de) 1998-03-17 2006-03-01 Asml Masktools Bv Verfahren zur erzeugung von sub-0,25 lambda linien mittels einer gedämpften phasenschiebermaske mit hoher transmission
JP3904329B2 (ja) * 1998-05-20 2007-04-11 株式会社ルネサステクノロジ 半導体装置の製造方法
US6593064B1 (en) * 1998-06-19 2003-07-15 Creo Inc. High resolution optical stepper
US6433986B1 (en) * 1999-04-20 2002-08-13 Olympus Optical Co., Ltd. Device having electrical board mounted thereon and method for manufacturing apparatus having the device
JP3756723B2 (ja) * 1999-07-27 2006-03-15 松下電工株式会社 プリント配線板の加工方法
US6670695B1 (en) * 2000-02-29 2003-12-30 United Microelectronics Corp. Method of manufacturing anti-reflection layer
US6541165B1 (en) * 2000-07-05 2003-04-01 Numerical Technologies, Inc. Phase shift mask sub-resolution assist features
US6782516B2 (en) * 2000-08-07 2004-08-24 Dupont Photomasks, Inc. System and method for eliminating design rule violations during construction of a mask layout block
CN1295563C (zh) 2001-05-18 2007-01-17 皇家菲利浦电子有限公司 制造器件的光刻法
US6807662B2 (en) * 2002-07-09 2004-10-19 Mentor Graphics Corporation Performance of integrated circuit components via a multiple exposure technique

Also Published As

Publication number Publication date
CN1295563C (zh) 2007-01-17
TW565881B (en) 2003-12-11
US20040146808A1 (en) 2004-07-29
WO2002095498A3 (en) 2003-10-16
EP1395877B1 (de) 2011-03-09
US7659041B2 (en) 2010-02-09
CN1474960A (zh) 2004-02-11
WO2002095498A2 (en) 2002-11-28
KR100955293B1 (ko) 2010-04-30
JP2004520723A (ja) 2004-07-08
EP1395877A2 (de) 2004-03-10
US20060160029A1 (en) 2006-07-20
JP4504622B2 (ja) 2010-07-14
KR20030014760A (ko) 2003-02-19
ATE501463T1 (de) 2011-03-15
US7037626B2 (en) 2006-05-02

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