DE60238892D1 - Vorrichtung zum Nachweis einer Feinstruktur an der Oberfläche einer Probe und Verfahren zur Herstellung einer Halbleitervorrichtung - Google Patents
Vorrichtung zum Nachweis einer Feinstruktur an der Oberfläche einer Probe und Verfahren zur Herstellung einer HalbleitervorrichtungInfo
- Publication number
- DE60238892D1 DE60238892D1 DE60238892T DE60238892T DE60238892D1 DE 60238892 D1 DE60238892 D1 DE 60238892D1 DE 60238892 T DE60238892 T DE 60238892T DE 60238892 T DE60238892 T DE 60238892T DE 60238892 D1 DE60238892 D1 DE 60238892D1
- Authority
- DE
- Germany
- Prior art keywords
- sample
- detecting
- producing
- fine structure
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/244—Detectors; Associated components or circuits therefor
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/9501—Semiconductor wafers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
- G03F1/84—Inspecting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
- H01J37/285—Emission microscopes, e.g. field-emission microscopes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/244—Detection characterized by the detecting means
- H01J2237/2441—Semiconductor detectors, e.g. diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/244—Detection characterized by the detecting means
- H01J2237/2446—Position sensitive detectors
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Analysing Materials By The Use Of Radiation (AREA)
- Length-Measuring Devices Using Wave Or Particle Radiation (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2001273432 | 2001-09-10 |
Publications (1)
Publication Number | Publication Date |
---|---|
DE60238892D1 true DE60238892D1 (de) | 2011-02-24 |
Family
ID=19098650
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60238892T Expired - Lifetime DE60238892D1 (de) | 2001-09-10 | 2002-09-10 | Vorrichtung zum Nachweis einer Feinstruktur an der Oberfläche einer Probe und Verfahren zur Herstellung einer Halbleitervorrichtung |
Country Status (7)
Country | Link |
---|---|
US (2) | US7075072B2 (de) |
EP (3) | EP2190002B8 (de) |
JP (2) | JP3886871B2 (de) |
KR (1) | KR100888688B1 (de) |
CN (2) | CN1940546B (de) |
DE (1) | DE60238892D1 (de) |
TW (1) | TW589723B (de) |
Families Citing this family (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1721330A2 (de) * | 2004-03-05 | 2006-11-15 | Oi Corporation | Fokalebenen-detektorbaugruppe eines massenspektrometers |
US7480082B2 (en) * | 2004-03-31 | 2009-01-20 | Carestream Health, Inc. | Radiation image scanning apparatus and method |
JP4613554B2 (ja) * | 2004-09-08 | 2011-01-19 | カシオ計算機株式会社 | 電子顕微鏡 |
TW200629454A (en) | 2005-02-14 | 2006-08-16 | Powerchip Semiconductor Corp | Method of detecting piping defect |
TW201307833A (zh) * | 2005-02-17 | 2013-02-16 | Ebara Corp | 電子射線裝置 |
JP2007335125A (ja) * | 2006-06-13 | 2007-12-27 | Ebara Corp | 電子線装置 |
US7544950B2 (en) * | 2006-10-30 | 2009-06-09 | Applied Materials, Israel, Ltd. | Microscope with vacuum objective |
JP2008233035A (ja) * | 2007-03-23 | 2008-10-02 | Toshiba Corp | 基板検査方法 |
US8175831B2 (en) * | 2007-04-23 | 2012-05-08 | Kla-Tencor Corp. | Methods and systems for creating or performing a dynamic sampling scheme for a process during which measurements are performed on wafers |
JP4988444B2 (ja) * | 2007-06-19 | 2012-08-01 | 株式会社日立製作所 | 検査方法および装置 |
NL2003263A (en) * | 2008-08-20 | 2010-03-10 | Asml Holding Nv | Particle detection on an object surface. |
FR2942070B1 (fr) * | 2009-02-11 | 2011-03-11 | Commissariat Energie Atomique | Procede de correction d'astigmatisme en imagerie par spectromicroscopie a emission d'electrons |
CN102175933B (zh) * | 2011-01-28 | 2013-09-11 | 南京理工大学 | 微通道板噪声因子测试方法 |
JP5963453B2 (ja) * | 2011-03-15 | 2016-08-03 | 株式会社荏原製作所 | 検査装置 |
US9503606B2 (en) | 2011-09-28 | 2016-11-22 | Semiconductor Components Industries, Llc | Time-delay-and-integrate image sensors having variable integration times |
US10401374B2 (en) * | 2014-11-30 | 2019-09-03 | Tichauer Technical Laboratories, Llc | Device and method of detecting and generating combined modulated particle wave-fronts |
RU2608382C1 (ru) * | 2015-10-15 | 2017-01-18 | Акционерное общество "Лыткаринский завод оптического стекла" | Способ установки ионного источника относительно обрабатываемой детали |
FR3042615B1 (fr) * | 2015-10-20 | 2017-12-08 | Shyftec | Dispositif pour emettre un signal d'authentification |
WO2017158744A1 (ja) * | 2016-03-16 | 2017-09-21 | 株式会社 日立ハイテクノロジーズ | 欠陥検査方法及び欠陥検査装置 |
JP6666627B2 (ja) * | 2016-03-28 | 2020-03-18 | 株式会社日立ハイテク | 荷電粒子線装置、及び荷電粒子線装置の調整方法 |
US11480606B2 (en) * | 2016-06-14 | 2022-10-25 | Taiwan Semiconductor Manufacturing Co., Ltd. | In-line device electrical property estimating method and test structure of the same |
CN108646167B (zh) * | 2018-04-27 | 2020-12-04 | 中科晶源微电子技术(北京)有限公司 | 用于半导体器件的激光辅助的电子束检测设备和方法 |
KR102630568B1 (ko) * | 2018-06-15 | 2024-01-29 | 삼성전자주식회사 | 반도체 소자의 제조 방법 |
JP7102271B2 (ja) * | 2018-07-17 | 2022-07-19 | ファスフォードテクノロジ株式会社 | 半導体製造装置および半導体装置の製造方法 |
US10753729B2 (en) | 2018-10-02 | 2020-08-25 | Saudi Arabian Oil Company | Photonic sensing analytical device |
JP7157708B2 (ja) * | 2019-06-25 | 2022-10-20 | 株式会社荏原製作所 | 電子線検査装置の二次光学系を評価する方法 |
US11079671B2 (en) | 2019-08-23 | 2021-08-03 | Taiwan Semiconductor Manufacturing Company Ltd. | Fabricating method of photomask, photomask structure thereof, and semiconductor manufacturing method using the same |
Family Cites Families (37)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4453086A (en) | 1981-12-31 | 1984-06-05 | International Business Machines Corporation | Electron beam system with reduced charge buildup |
KR860002082B1 (ko) * | 1983-01-19 | 1986-11-24 | 가부시기가이샤 도시바 | 레지스트 패턴의 형성 방법 및 장치 |
US4666228A (en) * | 1983-09-28 | 1987-05-19 | Pave Technology Co. | Hermetic connector and method |
US4550039A (en) * | 1984-03-01 | 1985-10-29 | Lucitron, Inc. | Method and apparatus for making electric connections into a compliant sealed package |
US4795977A (en) * | 1987-03-19 | 1989-01-03 | Pacific Western Systems, Inc. | Interface system for interfacing a device tester to a device under test |
US5004919A (en) | 1989-07-05 | 1991-04-02 | Jeol, Ltd. | Transmission electron microscope |
JPH03297083A (ja) | 1990-04-13 | 1991-12-27 | Texas Instr Japan Ltd | ソケット |
US5065029A (en) * | 1990-08-03 | 1991-11-12 | Gatan, Inc. | Cooled CCD camera for an electron microscope |
JPH071688B2 (ja) * | 1991-02-15 | 1995-01-11 | 株式会社島津製作所 | 走査型反射電子回折顕微鏡 |
JP3148353B2 (ja) | 1991-05-30 | 2001-03-19 | ケーエルエー・インストルメンツ・コーポレーション | 電子ビーム検査方法とそのシステム |
JP3730263B2 (ja) | 1992-05-27 | 2005-12-21 | ケーエルエー・インストルメンツ・コーポレーション | 荷電粒子ビームを用いた自動基板検査の装置及び方法 |
US5315113A (en) * | 1992-09-29 | 1994-05-24 | The Perkin-Elmer Corporation | Scanning and high resolution x-ray photoelectron spectroscopy and imaging |
CN1073014A (zh) * | 1992-10-28 | 1993-06-09 | 复旦大学 | 获得固体表面元素分布图的方法 |
US5434901A (en) | 1992-12-07 | 1995-07-18 | Olympus Optical Co., Ltd. | Soft X-ray microscope |
JP3409909B2 (ja) | 1994-03-11 | 2003-05-26 | 株式会社東芝 | ウェーハパターンの欠陥検出方法及び同装置 |
JP3258821B2 (ja) * | 1994-06-02 | 2002-02-18 | 三菱電機株式会社 | 微小異物の位置決め方法、分析方法、これに用いる分析装置およびこれを用いた半導体素子もしくは液晶表示素子の製法 |
JPH0990607A (ja) * | 1995-07-14 | 1997-04-04 | Canon Inc | 原版検査修正装置及び方法 |
US5868664A (en) * | 1996-02-23 | 1999-02-09 | Envision Medical Corporation | Electrically isolated sterilizable endoscopic video camera head |
JP3791095B2 (ja) * | 1996-03-05 | 2006-06-28 | 株式会社日立製作所 | 回路パターンの検査方法及び検査装置 |
JPH09312318A (ja) * | 1996-05-21 | 1997-12-02 | Hitachi Ltd | パタ−ン欠陥検査装置 |
JP4310824B2 (ja) * | 1998-10-05 | 2009-08-12 | 株式会社ニコン | 電子ビーム検査装置 |
US6184526B1 (en) * | 1997-01-08 | 2001-02-06 | Nikon Corporation | Apparatus and method for inspecting predetermined region on surface of specimen using electron beam |
WO1999029103A1 (fr) * | 1997-11-28 | 1999-06-10 | Hamamatsu Photonics K.K. | Dispositif de capture d'images a semi-conducteurs et analyseur utilisant ledit dispositif |
JPH11242943A (ja) | 1997-12-18 | 1999-09-07 | Nikon Corp | 検査装置 |
JPH11283545A (ja) * | 1998-03-30 | 1999-10-15 | Nikon Corp | 電子画像観察装置 |
JP3724949B2 (ja) * | 1998-05-15 | 2005-12-07 | 株式会社東芝 | 基板検査装置およびこれを備えた基板検査システム並びに基板検査方法 |
JP3533335B2 (ja) * | 1999-01-26 | 2004-05-31 | 独立行政法人 科学技術振興機構 | 化学分析用複合放出電子顕微鏡装置 |
JP3851740B2 (ja) * | 1999-02-10 | 2006-11-29 | 株式会社東芝 | 基板検査装置 |
KR100664422B1 (ko) * | 1999-05-28 | 2007-01-04 | 닛폰 하츠죠 가부시키가이샤 | 도전성 접촉자 |
JP2001235430A (ja) | 2000-02-25 | 2001-08-31 | Nikon Corp | 光学式検査装置および光学式表面検査装置 |
KR20010007152A (ko) | 1999-06-01 | 2001-01-26 | 오노 시게오 | 결함검사장치 및 결함검사방법 |
JP3805565B2 (ja) * | 1999-06-11 | 2006-08-02 | 株式会社日立製作所 | 電子線画像に基づく検査または計測方法およびその装置 |
JP2001102429A (ja) | 1999-07-29 | 2001-04-13 | Nikon Corp | ステージ装置およびそれを備えた検査装置 |
WO2001024218A1 (en) * | 1999-09-30 | 2001-04-05 | Gatan, Inc. | Electron image detector coupled by optical fibers with absorbing outer cladding to reduce blurring |
JP2001118536A (ja) * | 1999-10-19 | 2001-04-27 | Nikon Corp | 荷電粒子ビーム制御素子および荷電粒子ビーム装置 |
US6531041B1 (en) | 2000-07-20 | 2003-03-11 | Symyx Technologies, Inc. | Multiplexed capillary electrophoresis system with rotatable photodetector |
US6567497B2 (en) * | 2001-04-20 | 2003-05-20 | Lockheed Martin Corporation | Method and apparatus for inspecting a structure using X-rays |
-
2002
- 2002-09-04 TW TW091120132A patent/TW589723B/zh not_active IP Right Cessation
- 2002-09-09 JP JP2002262545A patent/JP3886871B2/ja not_active Expired - Lifetime
- 2002-09-09 KR KR1020020054248A patent/KR100888688B1/ko not_active IP Right Cessation
- 2002-09-10 DE DE60238892T patent/DE60238892D1/de not_active Expired - Lifetime
- 2002-09-10 CN CN2006101359214A patent/CN1940546B/zh not_active Expired - Fee Related
- 2002-09-10 CN CNB021416745A patent/CN1310025C/zh not_active Expired - Fee Related
- 2002-09-10 EP EP10001779.7A patent/EP2190002B8/de not_active Expired - Lifetime
- 2002-09-10 US US10/237,986 patent/US7075072B2/en not_active Expired - Lifetime
- 2002-09-10 EP EP16172147.7A patent/EP3089193A1/de not_active Withdrawn
- 2002-09-10 EP EP02020243A patent/EP1291900B1/de not_active Expired - Lifetime
-
2005
- 2005-09-26 JP JP2005277662A patent/JP2006080541A/ja active Pending
-
2006
- 2006-05-17 US US11/435,128 patent/US7449691B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
CN1940546B (zh) | 2011-07-20 |
JP2006080541A (ja) | 2006-03-23 |
JP3886871B2 (ja) | 2007-02-28 |
EP3089193A1 (de) | 2016-11-02 |
JP2003179113A (ja) | 2003-06-27 |
EP2190002B1 (de) | 2016-06-01 |
CN1310025C (zh) | 2007-04-11 |
US7449691B2 (en) | 2008-11-11 |
US20030047682A1 (en) | 2003-03-13 |
EP1291900B1 (de) | 2011-01-12 |
KR100888688B1 (ko) | 2009-03-13 |
TW589723B (en) | 2004-06-01 |
EP1291900A2 (de) | 2003-03-12 |
CN1407334A (zh) | 2003-04-02 |
EP1291900A3 (de) | 2003-05-28 |
KR20030022712A (ko) | 2003-03-17 |
EP2190002B8 (de) | 2016-09-14 |
EP2190002A1 (de) | 2010-05-26 |
US20060219909A1 (en) | 2006-10-05 |
CN1940546A (zh) | 2007-04-04 |
US7075072B2 (en) | 2006-07-11 |
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