DE60225817T2 - Prozess und vorrichtung zur behandlung eines arbeitsstücks, wie zum beispiel eines halbleiterwafers - Google Patents
Prozess und vorrichtung zur behandlung eines arbeitsstücks, wie zum beispiel eines halbleiterwafers Download PDFInfo
- Publication number
- DE60225817T2 DE60225817T2 DE60225817T DE60225817T DE60225817T2 DE 60225817 T2 DE60225817 T2 DE 60225817T2 DE 60225817 T DE60225817 T DE 60225817T DE 60225817 T DE60225817 T DE 60225817T DE 60225817 T2 DE60225817 T2 DE 60225817T2
- Authority
- DE
- Germany
- Prior art keywords
- workpiece
- liquid
- ozone
- nozzle
- chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P70/00—Cleaning of wafers, substrates or parts of devices
- H10P70/10—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H10P70/15—Cleaning before device manufacture, i.e. Begin-Of-Line process by wet cleaning only
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/02—Cleaning by the force of jets or sprays
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/044—Cleaning involving contact with liquid using agitated containers in which the liquid and articles or material are placed
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistors
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistors electrically connecting electric components or wires to printed circuits
- H05K3/34—Assembling printed circuits with electric components, e.g. with resistors electrically connecting electric components or wires to printed circuits by soldering
- H05K3/341—Surface mounted components
- H05K3/3421—Leaded components
- H05K3/3426—Leaded components characterised by the leads
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
- H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
- H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P70/00—Cleaning of wafers, substrates or parts of devices
- H10P70/10—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H10P70/18—Cleaning before device manufacture, i.e. Begin-Of-Line process by combined dry cleaning and wet cleaning
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/04—Apparatus for manufacture or treatment
- H10P72/0402—Apparatus for fluid treatment
- H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H10P72/0408—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/04—Apparatus for manufacture or treatment
- H10P72/0402—Apparatus for fluid treatment
- H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H10P72/0411—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/04—Apparatus for manufacture or treatment
- H10P72/0402—Apparatus for fluid treatment
- H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H10P72/0411—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H10P72/0414—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
- H10W70/40—Leadframes
- H10W70/456—Materials
- H10W70/457—Materials of metallic layers on leadframes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B2203/00—Details of cleaning machines or methods involving the use or presence of liquid or steam
- B08B2203/005—Details of cleaning machines or methods involving the use or presence of liquid or steam the liquid being ozonated
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B2203/00—Details of cleaning machines or methods involving the use or presence of liquid or steam
- B08B2203/007—Heating the liquid
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B2203/00—Details of cleaning machines or methods involving the use or presence of liquid or steam
- B08B2203/02—Details of machines or methods for cleaning by the force of jets or sprays
- B08B2203/0288—Ultra or megasonic jets
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B2230/00—Other cleaning aspects applicable to all B08B range
- B08B2230/01—Cleaning with steam
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Cleaning By Liquid Or Steam (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US925884 | 2001-08-06 | ||
| US09/925,884 US20020157686A1 (en) | 1997-05-09 | 2001-08-06 | Process and apparatus for treating a workpiece such as a semiconductor wafer |
| PCT/US2002/023515 WO2003015146A1 (en) | 2001-08-06 | 2002-07-23 | Process and apparatus for treating a workpiece such as a semiconductor wafer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE60225817D1 DE60225817D1 (de) | 2008-05-08 |
| DE60225817T2 true DE60225817T2 (de) | 2009-04-09 |
Family
ID=25452388
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE60225817T Expired - Lifetime DE60225817T2 (de) | 2001-08-06 | 2002-07-23 | Prozess und vorrichtung zur behandlung eines arbeitsstücks, wie zum beispiel eines halbleiterwafers |
Country Status (9)
| Country | Link |
|---|---|
| US (2) | US20020157686A1 (https=) |
| EP (1) | EP1421609B1 (https=) |
| JP (1) | JP3977807B2 (https=) |
| KR (1) | KR20040035721A (https=) |
| CN (1) | CN1319131C (https=) |
| AT (1) | ATE390706T1 (https=) |
| DE (1) | DE60225817T2 (https=) |
| TW (1) | TW559940B (https=) |
| WO (1) | WO2003015146A1 (https=) |
Families Citing this family (120)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050194356A1 (en) * | 1997-05-09 | 2005-09-08 | Semitool, Inc. | Removing photoresist from a workpiece using water and ozone and a photoresist penetrating additive |
| US7404863B2 (en) * | 1997-05-09 | 2008-07-29 | Semitool, Inc. | Methods of thinning a silicon wafer using HF and ozone |
| US6758938B1 (en) * | 1999-08-31 | 2004-07-06 | Micron Technology, Inc. | Delivery of dissolved ozone |
| US6774056B2 (en) | 1999-11-10 | 2004-08-10 | Semitool, Inc. | Sonic immersion process system and methods |
| WO2002027775A1 (fr) * | 2000-09-28 | 2002-04-04 | Mitsubishi Denki Kabushiki Kaisha | Procede et appareil de traitement de plaquettes |
| US20070079932A1 (en) * | 2001-12-07 | 2007-04-12 | Applied Materials, Inc. | Directed purge for contact free drying of wafers |
| US6726848B2 (en) * | 2001-12-07 | 2004-04-27 | Scp Global Technologies, Inc. | Apparatus and method for single substrate processing |
| US20090029560A1 (en) * | 2001-12-07 | 2009-01-29 | Applied Materials, Inc. | Apparatus and method for single substrate processing |
| US20080000495A1 (en) * | 2001-12-07 | 2008-01-03 | Eric Hansen | Apparatus and method for single substrate processing |
| JP3979464B2 (ja) * | 2001-12-27 | 2007-09-19 | 株式会社荏原製作所 | 無電解めっき前処理装置及び方法 |
| US6955485B2 (en) * | 2002-03-01 | 2005-10-18 | Tokyo Electron Limited | Developing method and developing unit |
| US20030192570A1 (en) * | 2002-04-11 | 2003-10-16 | Applied Materials, Inc. | Method and apparatus for wafer cleaning |
| US20030192577A1 (en) * | 2002-04-11 | 2003-10-16 | Applied Materials, Inc. | Method and apparatus for wafer cleaning |
| US6848455B1 (en) * | 2002-04-22 | 2005-02-01 | Novellus Systems, Inc. | Method and apparatus for removing photoresist and post-etch residue from semiconductor substrates by in-situ generation of oxidizing species |
| US20040159335A1 (en) * | 2002-05-17 | 2004-08-19 | P.C.T. Systems, Inc. | Method and apparatus for removing organic layers |
| US20040137698A1 (en) * | 2002-08-29 | 2004-07-15 | Gianni Taraschi | Fabrication system and method for monocrystaline semiconductor on a substrate |
| WO2004027849A1 (ja) * | 2002-09-20 | 2004-04-01 | Hitachi Kokusai Electric Inc. | 半導体装置の製造方法および基板処理装置 |
| ATE353475T1 (de) * | 2002-10-11 | 2007-02-15 | Soitec Silicon On Insulator | Verfahren und vorrichtung zur herstellung einer haftenden substratoberfläche |
| US7022193B2 (en) * | 2002-10-29 | 2006-04-04 | In Kwon Jeong | Apparatus and method for treating surfaces of semiconductor wafers using ozone |
| US7163018B2 (en) * | 2002-12-16 | 2007-01-16 | Applied Materials, Inc. | Single wafer cleaning method to reduce particle defects on a wafer surface |
| US6927582B2 (en) * | 2003-03-14 | 2005-08-09 | Steris Inc. | Method and apparatus for monitoring the state of a chemical solution for decontamination of chemical and biological warfare agents |
| US6933733B2 (en) | 2003-03-14 | 2005-08-23 | Steris Inc. | Method and apparatus for measuring the concentration of hydrogen peroxide in a fluid |
| US6960921B2 (en) | 2003-03-14 | 2005-11-01 | Steris Inc. | Method and apparatus for real time monitoring of metallic cation concentrations in a solution |
| US6930493B2 (en) * | 2003-03-14 | 2005-08-16 | Steris Inc. | Method and apparatus for monitoring detergent concentration in a decontamination process |
| US6992494B2 (en) * | 2003-03-14 | 2006-01-31 | Steris Inc. | Method and apparatus for monitoring the purity and/or quality of steam |
| US6897661B2 (en) * | 2003-03-14 | 2005-05-24 | Steris Inc. | Method and apparatus for detection of contaminants in a fluid |
| US6946852B2 (en) * | 2003-03-14 | 2005-09-20 | Steris Inc. | Method and apparatus for measuring concentration of a chemical component in a gas mixture |
| US6909972B2 (en) * | 2003-06-06 | 2005-06-21 | Steris Inc. | Method and apparatus for formulating and controlling chemical concentrations in a solution |
| US6917885B2 (en) * | 2003-06-06 | 2005-07-12 | Steris Inc. | Method and apparatus for formulating and controlling chemical concentration in a gas mixture |
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| AT501775B1 (de) * | 2003-12-18 | 2009-01-15 | Tokyo Electron Ltd | Verfahren zum entfernen eines resistfilms, substrat-behandlungsvorrichtung und computer-lesbares aufzeichnungsmedium |
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| US10053793B2 (en) | 2015-07-09 | 2018-08-21 | Lam Research Corporation | Integrated elastomeric lipseal and cup bottom for reducing wafer sticking |
| TWI638383B (zh) * | 2015-07-15 | 2018-10-11 | 美商原備有限公司 | 處理工件表面的方法 |
| TWI629720B (zh) * | 2015-09-30 | 2018-07-11 | Tokyo Electron Limited | 用於濕蝕刻製程之溫度的動態控制之方法及設備 |
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- 2002-07-23 WO PCT/US2002/023515 patent/WO2003015146A1/en not_active Ceased
- 2002-07-23 JP JP2003519981A patent/JP3977807B2/ja not_active Expired - Fee Related
- 2002-07-23 DE DE60225817T patent/DE60225817T2/de not_active Expired - Lifetime
- 2002-07-23 CN CNB028154878A patent/CN1319131C/zh not_active Expired - Fee Related
- 2002-07-23 EP EP02750283A patent/EP1421609B1/en not_active Expired - Lifetime
- 2002-07-23 AT AT02750283T patent/ATE390706T1/de active
- 2002-08-05 TW TW091117558A patent/TW559940B/zh not_active IP Right Cessation
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2003
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Also Published As
| Publication number | Publication date |
|---|---|
| CN1319131C (zh) | 2007-05-30 |
| ATE390706T1 (de) | 2008-04-15 |
| EP1421609A1 (en) | 2004-05-26 |
| EP1421609A4 (en) | 2005-08-24 |
| KR20040035721A (ko) | 2004-04-29 |
| CN1539161A (zh) | 2004-10-20 |
| EP1421609B1 (en) | 2008-03-26 |
| US20040103919A1 (en) | 2004-06-03 |
| JP2004538635A (ja) | 2004-12-24 |
| JP3977807B2 (ja) | 2007-09-19 |
| US20020157686A1 (en) | 2002-10-31 |
| TW559940B (en) | 2003-11-01 |
| DE60225817D1 (de) | 2008-05-08 |
| WO2003015146A1 (en) | 2003-02-20 |
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