DE602004026934D1 - Löschverfahren für nichtflüchtige speicherung und nichtflüchtige speicherung - Google Patents

Löschverfahren für nichtflüchtige speicherung und nichtflüchtige speicherung

Info

Publication number
DE602004026934D1
DE602004026934D1 DE602004026934T DE602004026934T DE602004026934D1 DE 602004026934 D1 DE602004026934 D1 DE 602004026934D1 DE 602004026934 T DE602004026934 T DE 602004026934T DE 602004026934 T DE602004026934 T DE 602004026934T DE 602004026934 D1 DE602004026934 D1 DE 602004026934D1
Authority
DE
Germany
Prior art keywords
volatile storage
deletion procedure
deletion
procedure
volatile
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602004026934T
Other languages
English (en)
Inventor
Hideho Taoka
Yoshihiro Suzumura
Kanji Hirano
Satoru Kawamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Spansion Japan Ltd
Spansion LLC
Original Assignee
Spansion Japan Ltd
Spansion LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Spansion Japan Ltd, Spansion LLC filed Critical Spansion Japan Ltd
Publication of DE602004026934D1 publication Critical patent/DE602004026934D1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
    • G11C16/16—Circuits for erasing electrically, e.g. erase voltage switching circuits for erasing blocks, e.g. arrays, words, groups
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/107—Programming all cells in an array, sector or block to the same state prior to flash erasing
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3404—Convergence or correction of memory cell threshold voltages; Repair or recovery of overerased or overprogrammed cells
    • G11C16/3409—Circuits or methods to recover overerased nonvolatile memory cells detected during erase verification, usually by means of a "soft" programming step
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/344—Arrangements for verifying correct erasure or for detecting overerased cells
    • G11C16/3445—Circuits or methods to verify correct erasure of nonvolatile memory cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/3468—Prevention of overerasure or overprogramming, e.g. by verifying whilst erasing or writing
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2216/00—Indexing scheme relating to G11C16/00 and subgroups, for features not directly covered by these groups
    • G11C2216/12—Reading and writing aspects of erasable programmable read-only memories
    • G11C2216/18—Flash erasure of all the cells in an array, sector or block simultaneously
DE602004026934T 2004-08-30 2004-08-30 Löschverfahren für nichtflüchtige speicherung und nichtflüchtige speicherung Active DE602004026934D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2004/012486 WO2006025089A1 (ja) 2004-08-30 2004-08-30 不揮発性記憶装置の消去方法、および不揮発性記憶装置

Publications (1)

Publication Number Publication Date
DE602004026934D1 true DE602004026934D1 (de) 2010-06-10

Family

ID=35999753

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602004026934T Active DE602004026934D1 (de) 2004-08-30 2004-08-30 Löschverfahren für nichtflüchtige speicherung und nichtflüchtige speicherung

Country Status (7)

Country Link
US (1) US7266019B2 (de)
EP (1) EP1788582B1 (de)
JP (1) JP4668199B2 (de)
CN (1) CN101023497B (de)
DE (1) DE602004026934D1 (de)
TW (3) TWI405210B (de)
WO (1) WO2006025089A1 (de)

Families Citing this family (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ITMI20052350A1 (it) * 2005-12-09 2007-06-10 St Microelectronics Srl Metodo di programmazione di celle di memoria in particolare di tipo flash e relativa architettura di programmazione
US7535763B2 (en) * 2006-11-16 2009-05-19 Sandisk Corporation Controlled boosting in non-volatile memory soft programming
US7697338B2 (en) * 2006-11-16 2010-04-13 Sandisk Corporation Systems for controlled boosting in non-volatile memory soft programming
JP2008135100A (ja) * 2006-11-28 2008-06-12 Toshiba Corp 半導体記憶装置及びそのデータ消去方法
KR100875538B1 (ko) * 2007-02-27 2008-12-26 삼성전자주식회사 불휘발성 메모리 장치 및 그것의 프로그램 및 소거 방법
KR100896190B1 (ko) * 2007-06-11 2009-05-12 삼성전자주식회사 불휘발성 메모리 장치의 소거 방법
US7787294B2 (en) * 2008-02-14 2010-08-31 Macronix International Co., Ltd. Operating method of memory
US8125829B2 (en) 2008-05-02 2012-02-28 Micron Technology, Inc. Biasing system and method
KR100953063B1 (ko) * 2008-05-23 2010-04-14 주식회사 하이닉스반도체 불휘발성 메모리 장치의 소거 방법
US7839690B2 (en) * 2008-12-11 2010-11-23 Sandisk Corporation Adaptive erase and soft programming for memory
CN102930899B (zh) * 2009-02-11 2015-11-25 北京兆易创新科技股份有限公司 一种非易失存储器的擦除方法及装置
US20100226178A1 (en) * 2009-03-05 2010-09-09 Infineon Technologies Ag Apparatus and methods for correcting over-erased flash memory cells
JP2010211883A (ja) * 2009-03-11 2010-09-24 Toshiba Corp 不揮発性半導体記憶装置
CN101923900B (zh) * 2009-06-09 2014-06-11 北京兆易创新科技股份有限公司 一种非易失存储器的擦除方法及装置
US8259504B2 (en) * 2009-07-15 2012-09-04 Ememory Technology Inc. Method of programming/erasing the nonvolatile memory
KR101139081B1 (ko) * 2010-07-09 2012-04-30 에스케이하이닉스 주식회사 반도체 메모리 장치 및 그 소거 방법
US8482987B2 (en) 2010-09-02 2013-07-09 Macronix International Co., Ltd. Method and apparatus for the erase suspend operation
KR101264019B1 (ko) * 2011-04-26 2013-05-13 에스케이하이닉스 주식회사 반도체 장치의 동작 방법
CN103000224A (zh) * 2011-09-16 2013-03-27 中国科学院微电子研究所 一种对存储器芯片进行擦除的方法
KR20140026141A (ko) * 2012-08-24 2014-03-05 에스케이하이닉스 주식회사 반도체 메모리 장치 및 이의 동작 방법
JP5583185B2 (ja) * 2012-10-12 2014-09-03 ウィンボンド エレクトロニクス コーポレーション 不揮発性半導体メモリ
KR102019843B1 (ko) * 2012-12-03 2019-09-11 에스케이하이닉스 주식회사 전하 트랩 소자들을 소거하는 방법
JP2015053098A (ja) * 2013-09-09 2015-03-19 株式会社東芝 不揮発性半導体記憶装置
JP6042363B2 (ja) * 2014-03-06 2016-12-14 株式会社東芝 不揮発性半導体記憶装置
US10825529B2 (en) 2014-08-08 2020-11-03 Macronix International Co., Ltd. Low latency memory erase suspend operation
KR20160039486A (ko) * 2014-10-01 2016-04-11 에스케이하이닉스 주식회사 반도체 장치
KR20160058521A (ko) * 2014-11-17 2016-05-25 에스케이하이닉스 주식회사 반도체 장치 및 이의 동작 방법
TWI567742B (zh) * 2015-04-23 2017-01-21 旺宏電子股份有限公司 電子裝置及非揮發性記憶體裝置與編程方法
JP6088602B2 (ja) * 2015-08-12 2017-03-01 ウィンボンド エレクトロニクス コーポレーション 不揮発性半導体記憶装置
JP6144741B2 (ja) * 2015-09-28 2017-06-07 ウィンボンド エレクトロニクス コーポレーション 不揮発性半導体メモリ
US9627091B1 (en) 2016-07-18 2017-04-18 Winbond Electronics Corporation Memory device and stress testing method of same
CN110808077A (zh) * 2018-08-06 2020-02-18 三星电子株式会社 非易失性存储器装置及操作其的方法
CN113409853B (zh) * 2021-05-21 2023-08-25 芯天下技术股份有限公司 减少掉电后读错误几率的方法、装置、存储介质和终端
CN113409862A (zh) * 2021-06-28 2021-09-17 芯天下技术股份有限公司 一种存储器擦除方法、装置、电子设备及存储介质
CN113409869A (zh) * 2021-06-30 2021-09-17 芯天下技术股份有限公司 非易失性存储器擦除方法、装置、电子设备及存储介质

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5359558A (en) * 1993-08-23 1994-10-25 Advanced Micro Devices, Inc. Flash eeprom array with improved high endurance
US5657268A (en) * 1995-11-20 1997-08-12 Texas Instruments Incorporated Array-source line, bitline and wordline sequence in flash operations
US5712815A (en) * 1996-04-22 1998-01-27 Advanced Micro Devices, Inc. Multiple bits per-cell flash EEPROM capable of concurrently programming and verifying memory cells and reference cells
US5912845A (en) * 1997-09-10 1999-06-15 Macronix International Co., Ltd. Method and circuit for substrate current induced hot e- injection (SCIHE) approach for VT convergence at low VCC voltage
JP3854025B2 (ja) * 1998-12-25 2006-12-06 株式会社東芝 不揮発性半導体記憶装置
JP2000260189A (ja) 1999-03-09 2000-09-22 Toshiba Corp 不揮発性半導体メモリ及びそのデータ消去方法
US6172909B1 (en) * 1999-08-09 2001-01-09 Advanced Micro Devices, Inc. Ramped gate technique for soft programming to tighten the Vt distribution
US6046932A (en) * 1999-08-13 2000-04-04 Advanced Micro Devices, Inc. Circuit implementation to quench bit line leakage current in programming and over-erase correction modes in flash EEPROM
JP4138173B2 (ja) 1999-08-26 2008-08-20 株式会社ルネサステクノロジ 不揮発性半導体記憶装置およびその消去方法
JP3425916B2 (ja) 1999-12-27 2003-07-14 Ｎｅｃエレクトロニクス株式会社 半導体記憶装置
US6452837B2 (en) * 1999-12-27 2002-09-17 Kabushiki Kaisha Toshiba Nonvolatile semiconductor memory and threshold voltage control method therefor
JP4131902B2 (ja) * 1999-12-27 2008-08-13 株式会社東芝 不揮発性半導体メモリおよびそのスレシホールド電圧制御方法
KR100335779B1 (ko) * 1999-12-29 2002-05-09 박종섭 플래쉬 메모리 소자의 소거 방법
US6205074B1 (en) * 2000-02-29 2001-03-20 Advanced Micro Devices, Inc. Temperature-compensated bias generator
JP3709126B2 (ja) 2000-07-05 2005-10-19 シャープ株式会社 不揮発性半導体メモリ装置の消去方法
US6252803B1 (en) * 2000-10-23 2001-06-26 Advanced Micro Devices, Inc. Automatic program disturb with intelligent soft programming for flash cells
US6493266B1 (en) * 2001-04-09 2002-12-10 Advanced Micro Devices, Inc. Soft program and soft program verify of the core cells in flash memory array
US6400608B1 (en) * 2001-04-25 2002-06-04 Advanced Micro Devices, Inc. Accurate verify apparatus and method for NOR flash memory cells in the presence of high column leakage
KR100463954B1 (ko) * 2002-05-17 2004-12-30 주식회사 하이닉스반도체 플래시 메모리 장치 및 그 소거 방법
US6643185B1 (en) * 2002-08-07 2003-11-04 Advanced Micro Devices, Inc. Method for repairing over-erasure of fast bits on floating gate memory devices
US6735114B1 (en) * 2003-02-04 2004-05-11 Advanced Micro Devices, Inc. Method of improving dynamic reference tracking for flash memory unit
US6967873B2 (en) * 2003-10-02 2005-11-22 Advanced Micro Devices, Inc. Memory device and method using positive gate stress to recover overerased cell
US6987696B1 (en) * 2004-07-06 2006-01-17 Advanced Micro Devices, Inc. Method of improving erase voltage distribution for a flash memory array having dummy wordlines

Also Published As

Publication number Publication date
JPWO2006025089A1 (ja) 2008-05-08
US7266019B2 (en) 2007-09-04
TWI529725B (zh) 2016-04-11
EP1788582A1 (de) 2007-05-23
WO2006025089A1 (ja) 2006-03-09
TWI405210B (zh) 2013-08-11
TW201346916A (zh) 2013-11-16
TW201346917A (zh) 2013-11-16
CN101023497B (zh) 2011-03-02
EP1788582B1 (de) 2010-04-28
TWI534816B (zh) 2016-05-21
TW200615960A (en) 2006-05-16
EP1788582A4 (de) 2008-10-08
US20060044919A1 (en) 2006-03-02
CN101023497A (zh) 2007-08-22
JP4668199B2 (ja) 2011-04-13

Similar Documents

Publication Publication Date Title
DE602004026934D1 (de) Löschverfahren für nichtflüchtige speicherung und nichtflüchtige speicherung
DE602005014192D1 (de) Adapter und Speichereinheit
DE602005005527D1 (de) Verschlussdüse
DE602005016854D1 (de) Speichervorrichtung
DK2341147T3 (da) Præprimitive stribe- og mesendodermceller
ATE384198T1 (de) Lagerungsvorrichtung
DE602005018825D1 (de) Verpackung für rauchwaren und dergleichen
ATE455629T1 (de) Rasierer und kassetten
ATE542648T1 (de) Rasierer und kassetten
DK2079485T3 (da) Phenylpropionamidforbindelser og anvendelsen deraf
DE602006011684D1 (de) Nichtflüchtiger Halbleiterspeicher mit drei Zuständen und dessen Betriebsverfahren
DE602005019525D1 (de) Verschlussdüse
DE602006011292D1 (de) Cache-speichersystem und steuerverfahren dafür
DE602005013344D1 (de) Erweiterte sichere Speicherzugriffsmethode und Archtitektur
DE602005023261D1 (de) Duale Speichervorrichtung und Verfahren dergleichen
DK1817055T3 (da) Ovr110-antistofsammensætninger og fremgangsmåder til anvendelse heraf
DE602007000219D1 (de) Nichtflüchtige Speichervorrichtung und Betriebsverfahren dafür
DE602005022287D1 (de) Bleibatterie und bleibatterie-speicherverfahren
DE502007001209D1 (de) Wachszusammensetzung und deren Verwendung
DE602004016280D1 (de) Nichtflüchtige Speicherzelle und Betriebsverfahren hierfür
DE602005022731D1 (de) Hren dafür
DE602006017777D1 (de) Halbleiterspeicher und dessen Betriebsverfahren
AT508430A5 (de) Formbauteil und dessen verwendung
DE602004009281D1 (de) Speichersystem und Rechnersystem
DE602004010055D1 (de) Nichtflüchtiger Halbleiterspeicher und dessen Betriebsverfahren

Legal Events

Date Code Title Description
8364 No opposition during term of opposition