DE602004024675D1 - Plasmaverarbeitungsvorrichtung und plasmaverarbeitungsverfahren - Google Patents
Plasmaverarbeitungsvorrichtung und plasmaverarbeitungsverfahrenInfo
- Publication number
- DE602004024675D1 DE602004024675D1 DE602004024675T DE602004024675T DE602004024675D1 DE 602004024675 D1 DE602004024675 D1 DE 602004024675D1 DE 602004024675 T DE602004024675 T DE 602004024675T DE 602004024675 T DE602004024675 T DE 602004024675T DE 602004024675 D1 DE602004024675 D1 DE 602004024675D1
- Authority
- DE
- Germany
- Prior art keywords
- plasma
- plasma processing
- processing
- processing target
- processing device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
- H01J37/32266—Means for controlling power transmitted to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/332—Coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Vapour Deposition (AREA)
- Electrical Discharge Machining, Electrochemical Machining, And Combined Machining (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
- Formation Of Insulating Films (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003152808 | 2003-05-29 | ||
PCT/JP2004/007485 WO2004107430A1 (ja) | 2003-05-29 | 2004-05-31 | プラズマ処理装置およびプラズマ処理方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
DE602004024675D1 true DE602004024675D1 (de) | 2010-01-28 |
Family
ID=33487270
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE602004024675T Active DE602004024675D1 (de) | 2003-05-29 | 2004-05-31 | Plasmaverarbeitungsvorrichtung und plasmaverarbeitungsverfahren |
Country Status (9)
Country | Link |
---|---|
US (1) | US20060156984A1 (de) |
EP (1) | EP1632994B1 (de) |
JP (2) | JP4615442B2 (de) |
KR (2) | KR100843018B1 (de) |
CN (1) | CN1799127B (de) |
AT (1) | ATE452421T1 (de) |
DE (1) | DE602004024675D1 (de) |
TW (1) | TW200511430A (de) |
WO (1) | WO2004107430A1 (de) |
Families Citing this family (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4718189B2 (ja) * | 2005-01-07 | 2011-07-06 | 東京エレクトロン株式会社 | プラズマ処理方法 |
CN101053083B (zh) * | 2005-02-01 | 2011-01-12 | 东京毅力科创株式会社 | 半导体装置的制造方法和等离子体氧化处理方法 |
US8318554B2 (en) * | 2005-04-28 | 2012-11-27 | Semiconductor Energy Laboratory Co., Ltd. | Method of forming gate insulating film for thin film transistors using plasma oxidation |
JP4993938B2 (ja) * | 2005-04-28 | 2012-08-08 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
US7625783B2 (en) | 2005-11-23 | 2009-12-01 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor element and method for manufacturing the same |
JP5183910B2 (ja) * | 2005-11-23 | 2013-04-17 | 株式会社半導体エネルギー研究所 | 半導体素子の作製方法 |
JP4578412B2 (ja) * | 2006-01-20 | 2010-11-10 | 日本碍子株式会社 | 放電プラズマ発生方法 |
JP2007250569A (ja) * | 2006-03-13 | 2007-09-27 | Tokyo Electron Ltd | プラズマ処理装置およびプラズマに曝される部材 |
JP2007273189A (ja) * | 2006-03-30 | 2007-10-18 | Tokyo Electron Ltd | プラズマ処理装置,基板処理システムおよび電力切替方法 |
US7443175B2 (en) * | 2006-07-14 | 2008-10-28 | Covidien Ag | Surgical testing instrument and system |
US7914692B2 (en) | 2006-08-29 | 2011-03-29 | Ngk Insulators, Ltd. | Methods of generating plasma, of etching an organic material film, of generating minus ions, of oxidation and nitriding |
JP4864661B2 (ja) * | 2006-11-22 | 2012-02-01 | 東京エレクトロン株式会社 | 太陽電池の製造方法及び太陽電池の製造装置 |
JP5138261B2 (ja) * | 2007-03-30 | 2013-02-06 | 東京エレクトロン株式会社 | シリコン酸化膜の形成方法、プラズマ処理装置および記憶媒体 |
JP2009088298A (ja) * | 2007-09-29 | 2009-04-23 | Tokyo Electron Ltd | プラズマ処理装置及びプラズマ処理方法 |
TW200946714A (en) * | 2008-02-18 | 2009-11-16 | Mitsui Engineering & Shipbuilding Co Ltd | Atomic layer deposition apparatus and atomic layer deposition method |
JP5357487B2 (ja) * | 2008-09-30 | 2013-12-04 | 東京エレクトロン株式会社 | シリコン酸化膜の形成方法、コンピュータ読み取り可能な記憶媒体およびプラズマ酸化処理装置 |
WO2010151337A1 (en) * | 2009-06-26 | 2010-12-29 | Tokyo Electron Limited | Improving the adhesiveness of fluorocarbon(cfx) film by doping of amorphous carbon |
JP5839804B2 (ja) | 2011-01-25 | 2016-01-06 | 国立大学法人東北大学 | 半導体装置の製造方法、および半導体装置 |
TWI450308B (zh) * | 2011-07-27 | 2014-08-21 | Hitachi High Tech Corp | Plasma processing method |
US9301383B2 (en) | 2012-03-30 | 2016-03-29 | Tokyo Electron Limited | Low electron temperature, edge-density enhanced, surface wave plasma (SWP) processing method and apparatus |
WO2014024044A1 (en) * | 2012-08-06 | 2014-02-13 | Goji Ltd. | Method for detecting dark discharge and device utilizing the method |
JP5841917B2 (ja) * | 2012-08-24 | 2016-01-13 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置及びプラズマ処理方法 |
CN103035470B (zh) * | 2012-12-14 | 2016-02-17 | 中微半导体设备(上海)有限公司 | 半导体刻蚀装置及半导体刻蚀方法 |
JP6861479B2 (ja) * | 2016-06-24 | 2021-04-21 | 東京エレクトロン株式会社 | プラズマ成膜方法およびプラズマ成膜装置 |
KR102217171B1 (ko) * | 2018-07-30 | 2021-02-17 | 도쿄엘렉트론가부시키가이샤 | 성막 방법 및 성막 장치 |
Family Cites Families (43)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2792558B2 (ja) * | 1987-12-07 | 1998-09-03 | 株式会社日立製作所 | 表面処理装置および表面処理方法 |
JPH06314660A (ja) * | 1993-03-04 | 1994-11-08 | Mitsubishi Electric Corp | 薄膜形成法及びその装置 |
US5770098A (en) * | 1993-03-19 | 1998-06-23 | Tokyo Electron Kabushiki Kaisha | Etching process |
JPH0955376A (ja) * | 1995-08-15 | 1997-02-25 | Sony Corp | プラズマcvd方法 |
CA2208718C (en) * | 1996-06-27 | 2005-01-25 | Takahiro Nakahigashi | Object coated with carbon film and method of manufacturing the same |
JP3658922B2 (ja) * | 1997-05-22 | 2005-06-15 | 松下電器産業株式会社 | プラズマ処理方法及び装置 |
JP3405141B2 (ja) | 1997-08-28 | 2003-05-12 | 松下電器産業株式会社 | プラズマ処理方法及び装置 |
JP2000058292A (ja) * | 1998-08-04 | 2000-02-25 | Matsushita Electron Corp | プラズマ処理装置及びプラズマ処理方法 |
KR100745495B1 (ko) * | 1999-03-10 | 2007-08-03 | 동경 엘렉트론 주식회사 | 반도체 제조방법 및 반도체 제조장치 |
JP4255563B2 (ja) * | 1999-04-05 | 2009-04-15 | 東京エレクトロン株式会社 | 半導体製造方法及び半導体製造装置 |
JP4258789B2 (ja) * | 1999-03-17 | 2009-04-30 | 東京エレクトロン株式会社 | ガス処理方法 |
JP2000306845A (ja) * | 1999-04-19 | 2000-11-02 | Tokyo Electron Ltd | マグネトロンプラズマ処理装置および処理方法 |
JP2000306894A (ja) * | 1999-04-23 | 2000-11-02 | Nec Corp | 基板のプラズマ処理方法 |
WO2001012873A1 (en) * | 1999-08-17 | 2001-02-22 | Tokyo Electron Limited | Pulsed plasma processing method and apparatus |
KR100746120B1 (ko) * | 2001-01-22 | 2007-08-13 | 동경 엘렉트론 주식회사 | 반도체 디바이스의 제조 방법, 플라즈마 처리 방법, 및게이트 절연막 형성 방법 |
KR100639147B1 (ko) * | 2001-01-25 | 2006-10-31 | 동경 엘렉트론 주식회사 | 플라즈마 처리 방법 |
JP2003037105A (ja) * | 2001-07-26 | 2003-02-07 | Tokyo Electron Ltd | プラズマ処理装置及び方法 |
WO2003015151A1 (en) * | 2001-08-02 | 2003-02-20 | Tokyo Electron Limited | Base material treating method and electron device-use material |
JP4090225B2 (ja) * | 2001-08-29 | 2008-05-28 | 東京エレクトロン株式会社 | 半導体装置の製造方法、及び、基板処理方法 |
JP3746968B2 (ja) * | 2001-08-29 | 2006-02-22 | 東京エレクトロン株式会社 | 絶縁膜の形成方法および形成システム |
JP4421150B2 (ja) * | 2001-09-04 | 2010-02-24 | パナソニック株式会社 | 絶縁膜の形成方法 |
US6756318B2 (en) * | 2001-09-10 | 2004-06-29 | Tegal Corporation | Nanolayer thick film processing system and method |
JP4147017B2 (ja) * | 2001-10-19 | 2008-09-10 | 東京エレクトロン株式会社 | マイクロ波プラズマ基板処理装置 |
JP4001498B2 (ja) * | 2002-03-29 | 2007-10-31 | 東京エレクトロン株式会社 | 絶縁膜の形成方法及び絶縁膜の形成システム |
CN100390945C (zh) * | 2002-03-29 | 2008-05-28 | 东京毅力科创株式会社 | 基底绝缘膜的形成方法 |
TWI225668B (en) * | 2002-05-13 | 2004-12-21 | Tokyo Electron Ltd | Substrate processing method |
WO2003098678A1 (fr) * | 2002-05-16 | 2003-11-27 | Tokyo Electron Limited | Procede de traitement de substrat |
KR101044366B1 (ko) * | 2002-06-12 | 2011-06-29 | 어플라이드 머티어리얼스, 인코포레이티드 | 기판을 처리하기 위한 플라즈마 방법 및 장치 |
US6660659B1 (en) * | 2002-06-12 | 2003-12-09 | Applied Materials, Inc. | Plasma method and apparatus for processing a substrate |
JP2004266075A (ja) * | 2003-02-28 | 2004-09-24 | Tokyo Electron Ltd | 基板処理方法 |
JP4408653B2 (ja) * | 2003-05-30 | 2010-02-03 | 東京エレクトロン株式会社 | 基板処理方法および半導体装置の製造方法 |
EP1722406A1 (de) * | 2004-03-03 | 2006-11-15 | Tokyo Electron Limited | Plasmaverarbeitungsverfahren und computerspeichermedium |
WO2006046634A1 (ja) * | 2004-10-28 | 2006-05-04 | Tokyo Electron Limited | ゲート絶縁膜の形成方法,半導体装置及びコンピュータ記録媒体 |
JP2006310736A (ja) * | 2005-03-30 | 2006-11-09 | Tokyo Electron Ltd | ゲート絶縁膜の製造方法および半導体装置の製造方法 |
US7820557B2 (en) * | 2005-03-31 | 2010-10-26 | Tokyo Electron Limited | Method for nitriding substrate and method for forming insulating film |
JP4509864B2 (ja) * | 2005-05-30 | 2010-07-21 | 東京エレクトロン株式会社 | プラズマ処理方法およびプラズマ処理装置 |
CN101194345B (zh) * | 2005-06-08 | 2010-05-19 | 国立大学法人东北大学 | 等离子体氮化处理方法和处理装置、半导体装置制造方法 |
WO2007034871A1 (ja) * | 2005-09-22 | 2007-03-29 | Tokyo Electron Limited | 選択的プラズマ処理方法 |
KR101063083B1 (ko) * | 2006-05-31 | 2011-09-07 | 도쿄엘렉트론가부시키가이샤 | 플라즈마 cvd 방법, 질화 규소막의 형성 방법, 반도체 장치의 제조 방법 및 플라즈마 cvd 장치 |
US7960293B2 (en) * | 2006-05-31 | 2011-06-14 | Tokyo Electron Limited | Method for forming insulating film and method for manufacturing semiconductor device |
WO2008081724A1 (ja) * | 2006-12-28 | 2008-07-10 | Tokyo Electron Limited | 絶縁膜の形成方法および半導体装置の製造方法 |
JPWO2008117798A1 (ja) * | 2007-03-26 | 2010-07-15 | 東京エレクトロン株式会社 | 窒化珪素膜の形成方法、不揮発性半導体メモリ装置の製造方法、不揮発性半導体メモリ装置およびプラズマ処理装置 |
US8968588B2 (en) * | 2012-03-30 | 2015-03-03 | Tokyo Electron Limited | Low electron temperature microwave surface-wave plasma (SWP) processing method and apparatus |
-
2004
- 2004-05-28 TW TW093115377A patent/TW200511430A/zh not_active IP Right Cessation
- 2004-05-31 EP EP04745450A patent/EP1632994B1/de not_active Not-in-force
- 2004-05-31 WO PCT/JP2004/007485 patent/WO2004107430A1/ja active Application Filing
- 2004-05-31 CN CN2004800149260A patent/CN1799127B/zh not_active Expired - Fee Related
- 2004-05-31 AT AT04745450T patent/ATE452421T1/de not_active IP Right Cessation
- 2004-05-31 DE DE602004024675T patent/DE602004024675D1/de active Active
- 2004-05-31 KR KR1020057022678A patent/KR100843018B1/ko not_active IP Right Cessation
- 2004-05-31 KR KR1020087002170A patent/KR100921871B1/ko not_active IP Right Cessation
- 2004-05-31 JP JP2005506525A patent/JP4615442B2/ja not_active Expired - Fee Related
-
2005
- 2005-11-29 US US11/288,336 patent/US20060156984A1/en not_active Abandoned
-
2010
- 2010-05-10 JP JP2010108624A patent/JP5261436B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
EP1632994A4 (de) | 2007-06-13 |
WO2004107430A1 (ja) | 2004-12-09 |
KR20080015056A (ko) | 2008-02-15 |
JP2010192934A (ja) | 2010-09-02 |
KR20060036053A (ko) | 2006-04-27 |
JPWO2004107430A1 (ja) | 2006-07-20 |
EP1632994A1 (de) | 2006-03-08 |
TW200511430A (en) | 2005-03-16 |
JP5261436B2 (ja) | 2013-08-14 |
KR100843018B1 (ko) | 2008-07-01 |
KR100921871B1 (ko) | 2009-10-13 |
CN1799127B (zh) | 2012-06-27 |
JP4615442B2 (ja) | 2011-01-19 |
TWI300248B (de) | 2008-08-21 |
EP1632994B1 (de) | 2009-12-16 |
ATE452421T1 (de) | 2010-01-15 |
US20060156984A1 (en) | 2006-07-20 |
CN1799127A (zh) | 2006-07-05 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |