DE60135628D1 - Herstellungsverfahren für ein halbleiter-bipolartransistor-bauelement - Google Patents
Herstellungsverfahren für ein halbleiter-bipolartransistor-bauelementInfo
- Publication number
- DE60135628D1 DE60135628D1 DE60135628T DE60135628T DE60135628D1 DE 60135628 D1 DE60135628 D1 DE 60135628D1 DE 60135628 T DE60135628 T DE 60135628T DE 60135628 T DE60135628 T DE 60135628T DE 60135628 D1 DE60135628 D1 DE 60135628D1
- Authority
- DE
- Germany
- Prior art keywords
- active area
- type doped
- base
- collector
- poly
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 239000004065 semiconductor Substances 0.000 title 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 2
- 229920005591 polysilicon Polymers 0.000 abstract 2
- 125000006850 spacer group Chemical group 0.000 abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 238000002955 isolation Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66272—Silicon vertical transistors
- H01L29/66287—Silicon vertical transistors with a single crystalline emitter, collector or base including extrinsic, link or graft base formed on the silicon substrate, e.g. by epitaxy, recrystallisation, after insulating device isolation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/732—Vertical transistors
- H01L29/7322—Vertical transistors having emitter-base and base-collector junctions leaving at the same surface of the body, e.g. planar transistor
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP00202342 | 2000-07-03 | ||
| PCT/EP2001/007407 WO2002003470A1 (en) | 2000-07-03 | 2001-06-28 | Method of manufacturing a bipolar transistor semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE60135628D1 true DE60135628D1 (de) | 2008-10-16 |
Family
ID=8171743
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE60135628T Expired - Lifetime DE60135628D1 (de) | 2000-07-03 | 2001-06-28 | Herstellungsverfahren für ein halbleiter-bipolartransistor-bauelement |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US6780724B2 (de) |
| EP (1) | EP1228533B1 (de) |
| JP (1) | JP2004503091A (de) |
| KR (1) | KR100761561B1 (de) |
| AT (1) | ATE407453T1 (de) |
| DE (1) | DE60135628D1 (de) |
| WO (1) | WO2002003470A1 (de) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6803289B1 (en) * | 2002-06-28 | 2004-10-12 | Cypress Semiconductor Corp. | Bipolar transistor and method for making the same |
| US7074628B2 (en) * | 2004-09-22 | 2006-07-11 | Agere Systems, Inc. | Test structure and method for yield improvement of double poly bipolar device |
| CN101908485B (zh) * | 2010-06-11 | 2016-03-02 | 上海华虹宏力半导体制造有限公司 | 利用三块掩模板制作垂直双极型晶体管的方法 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60186059A (ja) * | 1984-03-05 | 1985-09-21 | Sony Corp | 半導体装置及びその製造方法 |
| JPS63261746A (ja) * | 1987-04-20 | 1988-10-28 | Oki Electric Ind Co Ltd | バイポ−ラ型半導体集積回路装置の製造方法 |
| JP2615646B2 (ja) * | 1987-08-11 | 1997-06-04 | ソニー株式会社 | バイポーラトランジスタの製造方法 |
| US5204274A (en) | 1988-11-04 | 1993-04-20 | Matsushita Electric Industrial Co., Ltd. | Method of fabricating semiconductor device |
| US5101256A (en) * | 1989-02-13 | 1992-03-31 | International Business Machines Corporation | Bipolar transistor with ultra-thin epitaxial base and method of fabricating same |
| JPH03138946A (ja) * | 1989-10-24 | 1991-06-13 | Sony Corp | 半導体装置 |
| JPH06260489A (ja) * | 1993-03-02 | 1994-09-16 | Oki Electric Ind Co Ltd | 半導体装置の製造方法 |
-
2001
- 2001-06-28 JP JP2002507451A patent/JP2004503091A/ja not_active Withdrawn
- 2001-06-28 WO PCT/EP2001/007407 patent/WO2002003470A1/en active IP Right Grant
- 2001-06-28 AT AT01945322T patent/ATE407453T1/de not_active IP Right Cessation
- 2001-06-28 EP EP01945322A patent/EP1228533B1/de not_active Expired - Lifetime
- 2001-06-28 US US10/069,893 patent/US6780724B2/en not_active Expired - Lifetime
- 2001-06-28 KR KR1020027002674A patent/KR100761561B1/ko not_active IP Right Cessation
- 2001-06-28 DE DE60135628T patent/DE60135628D1/de not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| US20020123199A1 (en) | 2002-09-05 |
| EP1228533B1 (de) | 2008-09-03 |
| KR20020064279A (ko) | 2002-08-07 |
| KR100761561B1 (ko) | 2007-09-27 |
| WO2002003470A1 (en) | 2002-01-10 |
| EP1228533A1 (de) | 2002-08-07 |
| ATE407453T1 (de) | 2008-09-15 |
| JP2004503091A (ja) | 2004-01-29 |
| US6780724B2 (en) | 2004-08-24 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8364 | No opposition during term of opposition |