JPH0412031B2 - - Google Patents
Info
- Publication number
- JPH0412031B2 JPH0412031B2 JP56180890A JP18089081A JPH0412031B2 JP H0412031 B2 JPH0412031 B2 JP H0412031B2 JP 56180890 A JP56180890 A JP 56180890A JP 18089081 A JP18089081 A JP 18089081A JP H0412031 B2 JPH0412031 B2 JP H0412031B2
- Authority
- JP
- Japan
- Prior art keywords
- region
- stage transistor
- type diffusion
- emitter
- diffusion region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000012535 impurity Substances 0.000 claims description 15
- 239000004065 semiconductor Substances 0.000 claims description 13
- 239000000758 substrate Substances 0.000 claims description 11
- 238000009792 diffusion process Methods 0.000 description 32
- 230000003071 parasitic effect Effects 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 4
- 230000003321 amplification Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000003199 nucleic acid amplification method Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
- H01L27/0823—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
- H01L27/0825—Combination of vertical direct transistors of the same conductivity type having different characteristics,(e.g. Darlington transistors)
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56180890A JPS5882562A (ja) | 1981-11-10 | 1981-11-10 | 半導体装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56180890A JPS5882562A (ja) | 1981-11-10 | 1981-11-10 | 半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5882562A JPS5882562A (ja) | 1983-05-18 |
| JPH0412031B2 true JPH0412031B2 (de) | 1992-03-03 |
Family
ID=16091115
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56180890A Granted JPS5882562A (ja) | 1981-11-10 | 1981-11-10 | 半導体装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5882562A (de) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59110166A (ja) * | 1982-12-15 | 1984-06-26 | Sansha Electric Mfg Co Ltd | ダ−リントントランジスタ |
| EP0176753A1 (de) * | 1984-09-27 | 1986-04-09 | Siemens Aktiengesellschaft | Darlington-Schaltung mit einem Feldeffekttransistor und einen bipolaren Ausgangstransistor |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5140781A (de) * | 1974-08-02 | 1976-04-05 | Trw Inc | |
| JPS5658260A (en) * | 1979-10-16 | 1981-05-21 | Matsushita Electronics Corp | Darlington junction type transistor and production thereof |
-
1981
- 1981-11-10 JP JP56180890A patent/JPS5882562A/ja active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5140781A (de) * | 1974-08-02 | 1976-04-05 | Trw Inc | |
| JPS5658260A (en) * | 1979-10-16 | 1981-05-21 | Matsushita Electronics Corp | Darlington junction type transistor and production thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5882562A (ja) | 1983-05-18 |
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