SE0103805D0 - Lateral PNP transistor device, integrated circuit, and fabrication process thereof - Google Patents

Lateral PNP transistor device, integrated circuit, and fabrication process thereof

Info

Publication number
SE0103805D0
SE0103805D0 SE0103805A SE0103805A SE0103805D0 SE 0103805 D0 SE0103805 D0 SE 0103805D0 SE 0103805 A SE0103805 A SE 0103805A SE 0103805 A SE0103805 A SE 0103805A SE 0103805 D0 SE0103805 D0 SE 0103805D0
Authority
SE
Sweden
Prior art keywords
region
doped
source
pnp transistor
transistor device
Prior art date
Application number
SE0103805A
Other languages
English (en)
Other versions
SE0103805L (sv
SE522890C2 (sv
Inventor
Hans Norstroem
Ted Johansson
Original Assignee
Ericsson Telefon Ab L M
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ericsson Telefon Ab L M filed Critical Ericsson Telefon Ab L M
Priority to SE0103805A priority Critical patent/SE522890C2/sv
Publication of SE0103805D0 publication Critical patent/SE0103805D0/sv
Priority to PCT/SE2002/001876 priority patent/WO2003043080A1/en
Publication of SE0103805L publication Critical patent/SE0103805L/sv
Publication of SE522890C2 publication Critical patent/SE522890C2/sv

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007Multistep manufacturing processes
    • H01L29/66075Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66234Bipolar junction transistors [BJT]
    • H01L29/6625Lateral transistors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8248Combination of bipolar and field-effect technology
    • H01L21/8249Bipolar and MOS technology
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0617Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
    • H01L27/0623Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with bipolar transistors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70Bipolar devices
    • H01L29/72Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73Bipolar junction transistors
    • H01L29/735Lateral transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Bipolar Transistors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Bipolar Integrated Circuits (AREA)
SE0103805A 2001-11-15 2001-11-15 Lateral pnp-transistor, integrerad krets och tllverkningsprocess för dessa SE522890C2 (sv)

Priority Applications (2)

Application Number Priority Date Filing Date Title
SE0103805A SE522890C2 (sv) 2001-11-15 2001-11-15 Lateral pnp-transistor, integrerad krets och tllverkningsprocess för dessa
PCT/SE2002/001876 WO2003043080A1 (en) 2001-11-15 2002-10-15 Lateral pnp transistor device, integrated circuit, and fabrication process thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SE0103805A SE522890C2 (sv) 2001-11-15 2001-11-15 Lateral pnp-transistor, integrerad krets och tllverkningsprocess för dessa

Publications (3)

Publication Number Publication Date
SE0103805D0 true SE0103805D0 (sv) 2001-11-15
SE0103805L SE0103805L (sv) 2003-05-16
SE522890C2 SE522890C2 (sv) 2004-03-16

Family

ID=20285994

Family Applications (1)

Application Number Title Priority Date Filing Date
SE0103805A SE522890C2 (sv) 2001-11-15 2001-11-15 Lateral pnp-transistor, integrerad krets och tllverkningsprocess för dessa

Country Status (2)

Country Link
SE (1) SE522890C2 (sv)
WO (1) WO2003043080A1 (sv)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7439608B2 (en) * 2006-09-22 2008-10-21 Intel Corporation Symmetric bipolar junction transistor design for deep sub-micron fabrication processes
AU2010201661B1 (en) * 2010-04-27 2011-06-16 Bui, Dac Thong Mr Avalanche MOS-FET
US11804541B2 (en) * 2022-01-18 2023-10-31 Globalfoundries U.S. Inc. Bipolar transistor structure with emitter/collector contact to doped semiconductor well and related methods

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5355015A (en) * 1990-12-13 1994-10-11 National Semiconductor Corporation High breakdown lateral PNP transistor
US5498885A (en) * 1994-09-26 1996-03-12 Northern Telecom Limited Modulation circuit
FR2756104B1 (fr) * 1996-11-19 1999-01-29 Sgs Thomson Microelectronics Fabrication de circuits integres bipolaires/cmos
FR2762139B1 (fr) * 1997-04-15 1999-07-02 Sgs Thomson Microelectronics Transistor pnp lateral dans une technologie bicmos
US6281530B1 (en) * 1998-11-05 2001-08-28 Texas Instruments Incorporated LPNP utilizing base ballast resistor

Also Published As

Publication number Publication date
SE0103805L (sv) 2003-05-16
WO2003043080A1 (en) 2003-05-22
SE522890C2 (sv) 2004-03-16

Similar Documents

Publication Publication Date Title
JP5378635B2 (ja) シリコン・オン・インシュレータ内に形成された金属酸化膜半導体デバイス
US8022506B2 (en) SOI device with more immunity from substrate voltage
KR910019219A (ko) 반도체 구조물에 스페이서를 형성하는 방법 및 그 스페이서 구조
KR910019215A (ko) Bicmos 디바이스 및 그 제조방법
US20060027895A1 (en) Forming lateral bipolar junction transistor in CMOS flow
KR860007863A (ko) 반도체 장치
KR880014679A (ko) 샐로우 npn 에미터 및 mosfet 소오스/드레인을 형성하기 위한 bicmos 방법
GB1246208A (en) Pn junction gated field effect transistor having buried layer
SE0200414D0 (sv) Semiconductor fabrication process lateral pnp transistor, and integrated circuit
KR840005927A (ko) 반도체 집적 회로 장치 및 그의 제조 방법
US20050067653A1 (en) Vertical DMOS transistor device, integrated circuit, and fabrication method thereof
KR890009001A (ko) 고전압 병합 바이폴라/cmos 및 그 제조 방법
KR910007133A (ko) 고 성능 BiCMOS 회로를 제조하는 방법
KR100504204B1 (ko) 시모스 프로세스를 이용한 바이폴라 트랜지스터 제조방법
SE0103805D0 (sv) Lateral PNP transistor device, integrated circuit, and fabrication process thereof
KR100443685B1 (ko) 광전자적 마이크로 전자 시스템
US7808039B2 (en) SOI transistor with merged lateral bipolar transistor
KR960002889A (ko) 반도체 장치 및 그 제조방법
US8405157B2 (en) Bipolar integration without additional masking steps
KR100482950B1 (ko) 반도체소자 및 그 제조방법
KR910015063A (ko) 상보형 쌍극 트랜지스터
GB2143082A (en) Bipolar lateral transistor
JPS62219555A (ja) バイポ−ラ・mos半導体装置
DE60135628D1 (de) Herstellungsverfahren für ein halbleiter-bipolartransistor-bauelement
JPH03116774A (ja) 半導体装置の製造方法

Legal Events

Date Code Title Description
NUG Patent has lapsed