SE0103805L - En lateral pnp-transistor innefattande en PMOS transistor och en metod för dess framställning - Google Patents

En lateral pnp-transistor innefattande en PMOS transistor och en metod för dess framställning

Info

Publication number
SE0103805L
SE0103805L SE0103805A SE0103805A SE0103805L SE 0103805 L SE0103805 L SE 0103805L SE 0103805 A SE0103805 A SE 0103805A SE 0103805 A SE0103805 A SE 0103805A SE 0103805 L SE0103805 L SE 0103805L
Authority
SE
Sweden
Prior art keywords
region
doped
transistor
source
regions
Prior art date
Application number
SE0103805A
Other languages
English (en)
Other versions
SE0103805D0 (sv
SE522890C2 (sv
Inventor
Hans Norstroem
Ted Johansson
Original Assignee
Ericsson Telefon Ab L M
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ericsson Telefon Ab L M filed Critical Ericsson Telefon Ab L M
Priority to SE0103805A priority Critical patent/SE522890C2/sv
Publication of SE0103805D0 publication Critical patent/SE0103805D0/sv
Priority to PCT/SE2002/001876 priority patent/WO2003043080A1/en
Publication of SE0103805L publication Critical patent/SE0103805L/sv
Publication of SE522890C2 publication Critical patent/SE522890C2/sv

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66234—Bipolar junction transistors [BJT]
    • H01L29/6625—Lateral transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8248—Combination of bipolar and field-effect technology
    • H01L21/8249—Bipolar and MOS technology
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
    • H01L27/0623—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/735—Lateral transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Bipolar Transistors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Bipolar Integrated Circuits (AREA)
SE0103805A 2001-11-15 2001-11-15 Lateral pnp-transistor, integrerad krets och tllverkningsprocess för dessa SE522890C2 (sv)

Priority Applications (2)

Application Number Priority Date Filing Date Title
SE0103805A SE522890C2 (sv) 2001-11-15 2001-11-15 Lateral pnp-transistor, integrerad krets och tllverkningsprocess för dessa
PCT/SE2002/001876 WO2003043080A1 (en) 2001-11-15 2002-10-15 Lateral pnp transistor device, integrated circuit, and fabrication process thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SE0103805A SE522890C2 (sv) 2001-11-15 2001-11-15 Lateral pnp-transistor, integrerad krets och tllverkningsprocess för dessa

Publications (3)

Publication Number Publication Date
SE0103805D0 SE0103805D0 (sv) 2001-11-15
SE0103805L true SE0103805L (sv) 2003-05-16
SE522890C2 SE522890C2 (sv) 2004-03-16

Family

ID=20285994

Family Applications (1)

Application Number Title Priority Date Filing Date
SE0103805A SE522890C2 (sv) 2001-11-15 2001-11-15 Lateral pnp-transistor, integrerad krets och tllverkningsprocess för dessa

Country Status (2)

Country Link
SE (1) SE522890C2 (sv)
WO (1) WO2003043080A1 (sv)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7439608B2 (en) * 2006-09-22 2008-10-21 Intel Corporation Symmetric bipolar junction transistor design for deep sub-micron fabrication processes
AU2010201661B1 (en) * 2010-04-27 2011-06-16 Bui, Dac Thong Mr Avalanche MOS-FET
US11804541B2 (en) * 2022-01-18 2023-10-31 Globalfoundries U.S. Inc. Bipolar transistor structure with emitter/collector contact to doped semiconductor well and related methods

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5355015A (en) * 1990-12-13 1994-10-11 National Semiconductor Corporation High breakdown lateral PNP transistor
US5498885A (en) * 1994-09-26 1996-03-12 Northern Telecom Limited Modulation circuit
FR2756104B1 (fr) * 1996-11-19 1999-01-29 Sgs Thomson Microelectronics Fabrication de circuits integres bipolaires/cmos
FR2762139B1 (fr) * 1997-04-15 1999-07-02 Sgs Thomson Microelectronics Transistor pnp lateral dans une technologie bicmos
US6281530B1 (en) * 1998-11-05 2001-08-28 Texas Instruments Incorporated LPNP utilizing base ballast resistor

Also Published As

Publication number Publication date
SE0103805D0 (sv) 2001-11-15
WO2003043080A1 (en) 2003-05-22
SE522890C2 (sv) 2004-03-16

Similar Documents

Publication Publication Date Title
US6420771B2 (en) Trench isolated bipolar transistor structure integrated with CMOS technology
US4902639A (en) Process for making BiCMOS integrated circuit having a shallow trench bipolar transistor with vertical base contacts
KR910019215A (ko) Bicmos 디바이스 및 그 제조방법
US8022506B2 (en) SOI device with more immunity from substrate voltage
JP2012209603A (ja) シリコン・オン・インシュレータ内に形成された金属酸化膜半導体デバイス
JPH04278576A (ja) ＢｉＣＭＯＳ素子の製造方法
KR940704062A (ko) 억제된 커크효과를 나타내는 바이포울러 접합 트랜지스터(bipolar junction transistor exhibiting suppressed kirk effect)
GB1246208A (en) Pn junction gated field effect transistor having buried layer
SE0200414D0 (sv) Semiconductor fabrication process lateral pnp transistor, and integrated circuit
US20050067653A1 (en) Vertical DMOS transistor device, integrated circuit, and fabrication method thereof
KR840005927A (ko) 반도체 집적 회로 장치 및 그의 제조 방법
KR100504204B1 (ko) 시모스 프로세스를 이용한 바이폴라 트랜지스터 제조방법
US4983531A (en) Method of fabricating a single polysilicon bipolar transistor which is compatible with a method of fabricating CMOS transistors
SE0103805L (sv) En lateral pnp-transistor innefattande en PMOS transistor och en metod för dess framställning
US7808039B2 (en) SOI transistor with merged lateral bipolar transistor
KR100233366B1 (ko) 카운터 도우프된 콜렉터에 대한 bicmos 제조방법
EP0736898A3 (en) BICMOS device and method for the fabrication thereof
KR960002889A (ko) 반도체 장치 및 그 제조방법
US8405157B2 (en) Bipolar integration without additional masking steps
KR910015063A (ko) 상보형 쌍극 트랜지스터
KR100482950B1 (ko) 반도체소자 및 그 제조방법
SE0103726L (sv) En kisel-germanium mesa transistor, en metod för dess framställning och en integrerad krets innefattande en sådan transistor
US6551869B1 (en) Lateral PNP and method of manufacture
GB2143082A (en) Bipolar lateral transistor
EP0562217B1 (en) Lateral bipolar transistor with a low current leakage toward the substrate, corresponding integrated circuit and method of making such an integrated circuit

Legal Events

Date Code Title Description
NUG Patent has lapsed