DE60128019T2 - Bildsensorstruktur und Herstellungsverfahren dazu - Google Patents
Bildsensorstruktur und Herstellungsverfahren dazu Download PDFInfo
- Publication number
- DE60128019T2 DE60128019T2 DE60128019T DE60128019T DE60128019T2 DE 60128019 T2 DE60128019 T2 DE 60128019T2 DE 60128019 T DE60128019 T DE 60128019T DE 60128019 T DE60128019 T DE 60128019T DE 60128019 T2 DE60128019 T2 DE 60128019T2
- Authority
- DE
- Germany
- Prior art keywords
- layer
- organic dielectric
- common electrode
- dielectric layer
- conductive material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 21
- 239000004020 conductor Substances 0.000 claims description 31
- 239000000463 material Substances 0.000 claims description 21
- 229920001721 polyimide Polymers 0.000 claims description 19
- 239000004642 Polyimide Substances 0.000 claims description 18
- 238000003384 imaging method Methods 0.000 claims description 15
- 238000000034 method Methods 0.000 claims description 14
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- 239000011159 matrix material Substances 0.000 claims description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 11
- 239000000758 substrate Substances 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- 229910021417 amorphous silicon Inorganic materials 0.000 description 7
- 238000000059 patterning Methods 0.000 description 7
- 230000004888 barrier function Effects 0.000 description 5
- 239000003989 dielectric material Substances 0.000 description 5
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 5
- 238000002161 passivation Methods 0.000 description 5
- 238000001020 plasma etching Methods 0.000 description 5
- 238000004380 ashing Methods 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 239000007772 electrode material Substances 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 240000003517 Elaeocarpus dentatus Species 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 238000007789 sealing Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000001771 impaired effect Effects 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 229920000620 organic polymer Polymers 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 239000002689 soil Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 230000003044 adaptive effect Effects 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000001010 compromised effect Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000002594 fluoroscopy Methods 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000013507 mapping Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- -1 oxygen ions Chemical class 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000003303 reheating Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/20—Electrodes
- H10F77/206—Electrodes for devices having potential barriers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Light Receiving Elements (AREA)
- Measurement Of Radiation (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/522,231 US6465824B1 (en) | 2000-03-09 | 2000-03-09 | Imager structure |
| US522231 | 2000-03-09 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE60128019D1 DE60128019D1 (de) | 2007-06-06 |
| DE60128019T2 true DE60128019T2 (de) | 2007-12-27 |
Family
ID=24080027
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE60128019T Expired - Fee Related DE60128019T2 (de) | 2000-03-09 | 2001-01-08 | Bildsensorstruktur und Herstellungsverfahren dazu |
Country Status (5)
| Country | Link |
|---|---|
| US (2) | US6465824B1 (https=) |
| EP (1) | EP1132968B1 (https=) |
| JP (1) | JP2001274371A (https=) |
| DE (1) | DE60128019T2 (https=) |
| TW (1) | TW503573B (https=) |
Families Citing this family (59)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6617561B1 (en) * | 2000-03-09 | 2003-09-09 | General Electric Company | Low noise and high yield data line structure for imager |
| US7088323B2 (en) * | 2000-12-21 | 2006-08-08 | Lg.Philips Lcd Co., Ltd. | Liquid crystal display device and method for fabricating the same |
| US7023503B2 (en) * | 2002-02-20 | 2006-04-04 | Planar Systems, Inc. | Image sensor with photosensitive thin film transistors |
| US7408598B2 (en) | 2002-02-20 | 2008-08-05 | Planar Systems, Inc. | Light sensitive display with selected interval of light sensitive elements |
| US7053967B2 (en) | 2002-05-23 | 2006-05-30 | Planar Systems, Inc. | Light sensitive display |
| US7009663B2 (en) * | 2003-12-17 | 2006-03-07 | Planar Systems, Inc. | Integrated optical light sensitive active matrix liquid crystal display |
| DE10238400A1 (de) * | 2002-08-22 | 2004-03-04 | Gottlieb Binder Gmbh & Co. Kg | Vorrichtung zum Montieren von Sitzbezügen |
| US20060034492A1 (en) * | 2002-10-30 | 2006-02-16 | Roy Siegel | Hand recognition system |
| US20080084374A1 (en) | 2003-02-20 | 2008-04-10 | Planar Systems, Inc. | Light sensitive display |
| US6928144B2 (en) * | 2003-08-01 | 2005-08-09 | General Electric Company | Guard ring for direct photo-to-electron conversion detector array |
| US6982176B2 (en) * | 2003-10-30 | 2006-01-03 | General Electric Company | Method for monitoring production of pixel detectors and detectors produced thereby |
| US7773139B2 (en) | 2004-04-16 | 2010-08-10 | Apple Inc. | Image sensor with photosensitive thin film transistors |
| US20060045240A1 (en) * | 2004-08-31 | 2006-03-02 | Buchner Gregory C | Method and apparatus for delayed answering of telecommunications request |
| TWI287869B (en) * | 2005-02-16 | 2007-10-01 | Hannstar Display Corp | Structure and manufacturing method of imager array unit |
| TWI281586B (en) * | 2005-09-13 | 2007-05-21 | Ind Tech Res Inst | Pixel array |
| US7547572B2 (en) * | 2005-11-16 | 2009-06-16 | Emcore Corporation | Method of protecting semiconductor chips from mechanical and ESD damage during handling |
| US7612371B2 (en) * | 2006-01-17 | 2009-11-03 | International Business Machines Corporation | Structure to monitor arcing in the processing steps of metal layer build on silicon-on-insulator semiconductors |
| US9082673B2 (en) | 2009-10-05 | 2015-07-14 | Zena Technologies, Inc. | Passivated upstanding nanostructures and methods of making the same |
| US9515218B2 (en) | 2008-09-04 | 2016-12-06 | Zena Technologies, Inc. | Vertical pillar structured photovoltaic devices with mirrors and optical claddings |
| US9478685B2 (en) | 2014-06-23 | 2016-10-25 | Zena Technologies, Inc. | Vertical pillar structured infrared detector and fabrication method for the same |
| US8889455B2 (en) | 2009-12-08 | 2014-11-18 | Zena Technologies, Inc. | Manufacturing nanowire photo-detector grown on a back-side illuminated image sensor |
| US9406709B2 (en) | 2010-06-22 | 2016-08-02 | President And Fellows Of Harvard College | Methods for fabricating and using nanowires |
| US8507840B2 (en) | 2010-12-21 | 2013-08-13 | Zena Technologies, Inc. | Vertically structured passive pixel arrays and methods for fabricating the same |
| US8519379B2 (en) | 2009-12-08 | 2013-08-27 | Zena Technologies, Inc. | Nanowire structured photodiode with a surrounding epitaxially grown P or N layer |
| US9000353B2 (en) | 2010-06-22 | 2015-04-07 | President And Fellows Of Harvard College | Light absorption and filtering properties of vertically oriented semiconductor nano wires |
| US8274039B2 (en) | 2008-11-13 | 2012-09-25 | Zena Technologies, Inc. | Vertical waveguides with various functionality on integrated circuits |
| US8748799B2 (en) | 2010-12-14 | 2014-06-10 | Zena Technologies, Inc. | Full color single pixel including doublet or quadruplet si nanowires for image sensors |
| US8866065B2 (en) | 2010-12-13 | 2014-10-21 | Zena Technologies, Inc. | Nanowire arrays comprising fluorescent nanowires |
| US8269985B2 (en) | 2009-05-26 | 2012-09-18 | Zena Technologies, Inc. | Determination of optimal diameters for nanowires |
| US8791470B2 (en) | 2009-10-05 | 2014-07-29 | Zena Technologies, Inc. | Nano structured LEDs |
| US8735797B2 (en) | 2009-12-08 | 2014-05-27 | Zena Technologies, Inc. | Nanowire photo-detector grown on a back-side illuminated image sensor |
| US8835831B2 (en) | 2010-06-22 | 2014-09-16 | Zena Technologies, Inc. | Polarized light detecting device and fabrication methods of the same |
| US8546742B2 (en) | 2009-06-04 | 2013-10-01 | Zena Technologies, Inc. | Array of nanowires in a single cavity with anti-reflective coating on substrate |
| US9299866B2 (en) | 2010-12-30 | 2016-03-29 | Zena Technologies, Inc. | Nanowire array based solar energy harvesting device |
| US9343490B2 (en) | 2013-08-09 | 2016-05-17 | Zena Technologies, Inc. | Nanowire structured color filter arrays and fabrication method of the same |
| US8299472B2 (en) | 2009-12-08 | 2012-10-30 | Young-June Yu | Active pixel sensor with nanowire structured photodetectors |
| US8229255B2 (en) | 2008-09-04 | 2012-07-24 | Zena Technologies, Inc. | Optical waveguides in image sensors |
| US8890271B2 (en) * | 2010-06-30 | 2014-11-18 | Zena Technologies, Inc. | Silicon nitride light pipes for image sensors |
| KR20100037211A (ko) * | 2008-10-01 | 2010-04-09 | 주식회사 동부하이텍 | 이미지 센서 및 그 제조 방법 |
| US8106487B2 (en) * | 2008-12-23 | 2012-01-31 | Pratt & Whitney Rocketdyne, Inc. | Semiconductor device having an inorganic coating layer applied over a junction termination extension |
| US9310923B2 (en) | 2010-12-03 | 2016-04-12 | Apple Inc. | Input device for touch sensitive devices |
| US8638320B2 (en) | 2011-06-22 | 2014-01-28 | Apple Inc. | Stylus orientation detection |
| US9329703B2 (en) | 2011-06-22 | 2016-05-03 | Apple Inc. | Intelligent stylus |
| US8928635B2 (en) | 2011-06-22 | 2015-01-06 | Apple Inc. | Active stylus |
| JP2013243319A (ja) * | 2012-05-23 | 2013-12-05 | Konica Minolta Inc | 放射線画像撮影装置 |
| US9176604B2 (en) | 2012-07-27 | 2015-11-03 | Apple Inc. | Stylus device |
| US9652090B2 (en) | 2012-07-27 | 2017-05-16 | Apple Inc. | Device for digital communication through capacitive coupling |
| US9557845B2 (en) | 2012-07-27 | 2017-01-31 | Apple Inc. | Input device for and method of communication with capacitive devices through frequency variation |
| US9935152B2 (en) | 2012-12-27 | 2018-04-03 | General Electric Company | X-ray detector having improved noise performance |
| US10048775B2 (en) | 2013-03-14 | 2018-08-14 | Apple Inc. | Stylus detection and demodulation |
| US9939935B2 (en) | 2013-07-31 | 2018-04-10 | Apple Inc. | Scan engine for touch controller architecture |
| FR3012663B1 (fr) * | 2013-10-25 | 2015-12-04 | Thales Sa | Generateur de rayons x a capteur de flux integre |
| US9917133B2 (en) * | 2013-12-12 | 2018-03-13 | General Electric Company | Optoelectronic device with flexible substrate |
| US10732131B2 (en) | 2014-03-13 | 2020-08-04 | General Electric Company | Curved digital X-ray detector for weld inspection |
| US10061450B2 (en) | 2014-12-04 | 2018-08-28 | Apple Inc. | Coarse scan and targeted active mode scan for touch |
| US10474277B2 (en) | 2016-05-31 | 2019-11-12 | Apple Inc. | Position-based stylus communication |
| EP3355355B1 (en) * | 2017-01-27 | 2019-03-13 | Detection Technology Oy | Asymmetrically positioned guard ring contacts |
| JP7308595B2 (ja) * | 2018-07-02 | 2023-07-14 | Ｔｉａｎｍａ Ｊａｐａｎ株式会社 | イメージセンサ |
| US12153764B1 (en) | 2020-09-25 | 2024-11-26 | Apple Inc. | Stylus with receive architecture for position determination |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05303116A (ja) * | 1992-02-28 | 1993-11-16 | Canon Inc | 半導体装置 |
| US5233181A (en) * | 1992-06-01 | 1993-08-03 | General Electric Company | Photosensitive element with two layer passivation coating |
| US5463225A (en) * | 1992-06-01 | 1995-10-31 | General Electric Company | Solid state radiation imager with high integrity barrier layer and method of fabricating |
| US5401668A (en) | 1993-09-02 | 1995-03-28 | General Electric Company | Method for fabrication solid state radiation imager having improved scintillator adhesion |
| US5399884A (en) * | 1993-11-10 | 1995-03-21 | General Electric Company | Radiation imager with single passivation dielectric for transistor and diode |
| US5389775A (en) * | 1993-12-03 | 1995-02-14 | General Electric Company | Imager assembly with multiple common electrode contacts |
| US5517031A (en) * | 1994-06-21 | 1996-05-14 | General Electric Company | Solid state imager with opaque layer |
| WO1998005187A1 (en) * | 1996-07-29 | 1998-02-05 | Cambridge Display Technology Limited | Electroluminescent devices with electrode protection |
| WO1998010473A1 (en) * | 1996-09-04 | 1998-03-12 | Cambridge Display Technology Limited | Electrode deposition for organic light-emitting devices |
| US5777355A (en) | 1996-12-23 | 1998-07-07 | General Electric Company | Radiation imager with discontinuous dielectric |
| US6037609A (en) * | 1997-01-17 | 2000-03-14 | General Electric Company | Corrosion resistant imager |
| US6232626B1 (en) * | 1999-02-01 | 2001-05-15 | Micron Technology, Inc. | Trench photosensor for a CMOS imager |
| KR100477788B1 (ko) * | 1999-12-28 | 2005-03-22 | 매그나칩 반도체 유한회사 | 커패시터가 접속된 포토다이오드를 갖는 씨모스이미지센서 및 그 제조방법 |
| TWI282625B (en) * | 2002-08-01 | 2007-06-11 | Au Optronics Corp | Method of forming a thin film transistor liquid crystal display |
-
2000
- 2000-03-09 US US09/522,231 patent/US6465824B1/en not_active Expired - Fee Related
-
2001
- 2001-01-03 TW TW090100138A patent/TW503573B/zh not_active IP Right Cessation
- 2001-01-08 DE DE60128019T patent/DE60128019T2/de not_active Expired - Fee Related
- 2001-01-08 EP EP01300120A patent/EP1132968B1/en not_active Expired - Lifetime
- 2001-01-09 JP JP2001001110A patent/JP2001274371A/ja not_active Withdrawn
-
2002
- 2002-07-02 US US10/187,241 patent/US6680216B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| EP1132968A3 (en) | 2005-03-30 |
| US6465824B1 (en) | 2002-10-15 |
| US20020195601A1 (en) | 2002-12-26 |
| TW503573B (en) | 2002-09-21 |
| US6680216B2 (en) | 2004-01-20 |
| EP1132968B1 (en) | 2007-04-25 |
| DE60128019D1 (de) | 2007-06-06 |
| EP1132968A2 (en) | 2001-09-12 |
| JP2001274371A (ja) | 2001-10-05 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8364 | No opposition during term of opposition | ||
| 8339 | Ceased/non-payment of the annual fee |