JP2001274371A - 撮像装置構造物 - Google Patents

撮像装置構造物

Info

Publication number
JP2001274371A
JP2001274371A JP2001001110A JP2001001110A JP2001274371A JP 2001274371 A JP2001274371 A JP 2001274371A JP 2001001110 A JP2001001110 A JP 2001001110A JP 2001001110 A JP2001001110 A JP 2001001110A JP 2001274371 A JP2001274371 A JP 2001274371A
Authority
JP
Japan
Prior art keywords
layer
light
imaging device
organic dielectric
conductive material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2001001110A
Other languages
English (en)
Japanese (ja)
Other versions
JP2001274371A5 (https=
Inventor
Robert Forrest Kwasnick
ロバート・フォレスト・クァスニック
Jianqiang Liu
ジャンキアン・リウ
George Edward Possin
ジョージ・エドワード・ポシン
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co
Original Assignee
General Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co filed Critical General Electric Co
Publication of JP2001274371A publication Critical patent/JP2001274371A/ja
Publication of JP2001274371A5 publication Critical patent/JP2001274371A5/ja
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
  • Measurement Of Radiation (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP2001001110A 2000-03-09 2001-01-09 撮像装置構造物 Withdrawn JP2001274371A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/522,231 US6465824B1 (en) 2000-03-09 2000-03-09 Imager structure
US09/522231 2000-03-09

Publications (2)

Publication Number Publication Date
JP2001274371A true JP2001274371A (ja) 2001-10-05
JP2001274371A5 JP2001274371A5 (https=) 2008-02-21

Family

ID=24080027

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001001110A Withdrawn JP2001274371A (ja) 2000-03-09 2001-01-09 撮像装置構造物

Country Status (5)

Country Link
US (2) US6465824B1 (https=)
EP (1) EP1132968B1 (https=)
JP (1) JP2001274371A (https=)
DE (1) DE60128019T2 (https=)
TW (1) TW503573B (https=)

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JP2017501533A (ja) * 2013-10-25 2017-01-12 タレス 内蔵フローセンサを有するｘ線発生装置

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US7773139B2 (en) 2004-04-16 2010-08-10 Apple Inc. Image sensor with photosensitive thin film transistors
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US7547572B2 (en) * 2005-11-16 2009-06-16 Emcore Corporation Method of protecting semiconductor chips from mechanical and ESD damage during handling
US7612371B2 (en) * 2006-01-17 2009-11-03 International Business Machines Corporation Structure to monitor arcing in the processing steps of metal layer build on silicon-on-insulator semiconductors
US9082673B2 (en) 2009-10-05 2015-07-14 Zena Technologies, Inc. Passivated upstanding nanostructures and methods of making the same
US9515218B2 (en) 2008-09-04 2016-12-06 Zena Technologies, Inc. Vertical pillar structured photovoltaic devices with mirrors and optical claddings
US9478685B2 (en) 2014-06-23 2016-10-25 Zena Technologies, Inc. Vertical pillar structured infrared detector and fabrication method for the same
US8889455B2 (en) 2009-12-08 2014-11-18 Zena Technologies, Inc. Manufacturing nanowire photo-detector grown on a back-side illuminated image sensor
US9406709B2 (en) 2010-06-22 2016-08-02 President And Fellows Of Harvard College Methods for fabricating and using nanowires
US8507840B2 (en) 2010-12-21 2013-08-13 Zena Technologies, Inc. Vertically structured passive pixel arrays and methods for fabricating the same
US8519379B2 (en) 2009-12-08 2013-08-27 Zena Technologies, Inc. Nanowire structured photodiode with a surrounding epitaxially grown P or N layer
US9000353B2 (en) 2010-06-22 2015-04-07 President And Fellows Of Harvard College Light absorption and filtering properties of vertically oriented semiconductor nano wires
US8274039B2 (en) 2008-11-13 2012-09-25 Zena Technologies, Inc. Vertical waveguides with various functionality on integrated circuits
US8748799B2 (en) 2010-12-14 2014-06-10 Zena Technologies, Inc. Full color single pixel including doublet or quadruplet si nanowires for image sensors
US8866065B2 (en) 2010-12-13 2014-10-21 Zena Technologies, Inc. Nanowire arrays comprising fluorescent nanowires
US8269985B2 (en) 2009-05-26 2012-09-18 Zena Technologies, Inc. Determination of optimal diameters for nanowires
US8791470B2 (en) 2009-10-05 2014-07-29 Zena Technologies, Inc. Nano structured LEDs
US8735797B2 (en) 2009-12-08 2014-05-27 Zena Technologies, Inc. Nanowire photo-detector grown on a back-side illuminated image sensor
US8835831B2 (en) 2010-06-22 2014-09-16 Zena Technologies, Inc. Polarized light detecting device and fabrication methods of the same
US8546742B2 (en) 2009-06-04 2013-10-01 Zena Technologies, Inc. Array of nanowires in a single cavity with anti-reflective coating on substrate
US9299866B2 (en) 2010-12-30 2016-03-29 Zena Technologies, Inc. Nanowire array based solar energy harvesting device
US9343490B2 (en) 2013-08-09 2016-05-17 Zena Technologies, Inc. Nanowire structured color filter arrays and fabrication method of the same
US8299472B2 (en) 2009-12-08 2012-10-30 Young-June Yu Active pixel sensor with nanowire structured photodetectors
US8229255B2 (en) 2008-09-04 2012-07-24 Zena Technologies, Inc. Optical waveguides in image sensors
US8890271B2 (en) * 2010-06-30 2014-11-18 Zena Technologies, Inc. Silicon nitride light pipes for image sensors
KR20100037211A (ko) * 2008-10-01 2010-04-09 주식회사 동부하이텍 이미지 센서 및 그 제조 방법
US8106487B2 (en) * 2008-12-23 2012-01-31 Pratt & Whitney Rocketdyne, Inc. Semiconductor device having an inorganic coating layer applied over a junction termination extension
US9310923B2 (en) 2010-12-03 2016-04-12 Apple Inc. Input device for touch sensitive devices
US8638320B2 (en) 2011-06-22 2014-01-28 Apple Inc. Stylus orientation detection
US9329703B2 (en) 2011-06-22 2016-05-03 Apple Inc. Intelligent stylus
US8928635B2 (en) 2011-06-22 2015-01-06 Apple Inc. Active stylus
JP2013243319A (ja) * 2012-05-23 2013-12-05 Konica Minolta Inc 放射線画像撮影装置
US9176604B2 (en) 2012-07-27 2015-11-03 Apple Inc. Stylus device
US9652090B2 (en) 2012-07-27 2017-05-16 Apple Inc. Device for digital communication through capacitive coupling
US9557845B2 (en) 2012-07-27 2017-01-31 Apple Inc. Input device for and method of communication with capacitive devices through frequency variation
US9935152B2 (en) 2012-12-27 2018-04-03 General Electric Company X-ray detector having improved noise performance
US10048775B2 (en) 2013-03-14 2018-08-14 Apple Inc. Stylus detection and demodulation
US9939935B2 (en) 2013-07-31 2018-04-10 Apple Inc. Scan engine for touch controller architecture
US9917133B2 (en) * 2013-12-12 2018-03-13 General Electric Company Optoelectronic device with flexible substrate
US10732131B2 (en) 2014-03-13 2020-08-04 General Electric Company Curved digital X-ray detector for weld inspection
US10061450B2 (en) 2014-12-04 2018-08-28 Apple Inc. Coarse scan and targeted active mode scan for touch
US10474277B2 (en) 2016-05-31 2019-11-12 Apple Inc. Position-based stylus communication
EP3355355B1 (en) * 2017-01-27 2019-03-13 Detection Technology Oy Asymmetrically positioned guard ring contacts
JP7308595B2 (ja) * 2018-07-02 2023-07-14 Ｔｉａｎｍａ Ｊａｐａｎ株式会社 イメージセンサ
US12153764B1 (en) 2020-09-25 2024-11-26 Apple Inc. Stylus with receive architecture for position determination

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017501533A (ja) * 2013-10-25 2017-01-12 タレス 内蔵フローセンサを有するｘ線発生装置
US10014150B2 (en) 2013-10-25 2018-07-03 Thales X-ray generator with a built-in flow sensor

Also Published As

Publication number Publication date
EP1132968A3 (en) 2005-03-30
US6465824B1 (en) 2002-10-15
DE60128019T2 (de) 2007-12-27
US20020195601A1 (en) 2002-12-26
TW503573B (en) 2002-09-21
US6680216B2 (en) 2004-01-20
EP1132968B1 (en) 2007-04-25
DE60128019D1 (de) 2007-06-06
EP1132968A2 (en) 2001-09-12

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