DE60128019D1 - Bildsensorstruktur und Herstellungsverfahren dazu - Google Patents

Bildsensorstruktur und Herstellungsverfahren dazu

Info

Publication number
DE60128019D1
DE60128019D1 DE60128019T DE60128019T DE60128019D1 DE 60128019 D1 DE60128019 D1 DE 60128019D1 DE 60128019 T DE60128019 T DE 60128019T DE 60128019 T DE60128019 T DE 60128019T DE 60128019 D1 DE60128019 D1 DE 60128019D1
Authority
DE
Germany
Prior art keywords
manufacturing
image sensor
sensor structure
image
sensor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE60128019T
Other languages
English (en)
Other versions
DE60128019T2 (de
Inventor
Robert Forrest Kwasnick
George Edward Possin
Jianqiang Liu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co
Original Assignee
General Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co filed Critical General Electric Co
Publication of DE60128019D1 publication Critical patent/DE60128019D1/de
Application granted granted Critical
Publication of DE60128019T2 publication Critical patent/DE60128019T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
  • Measurement Of Radiation (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
DE60128019T 2000-03-09 2001-01-08 Bildsensorstruktur und Herstellungsverfahren dazu Expired - Fee Related DE60128019T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US522231 2000-03-09
US09/522,231 US6465824B1 (en) 2000-03-09 2000-03-09 Imager structure

Publications (2)

Publication Number Publication Date
DE60128019D1 true DE60128019D1 (de) 2007-06-06
DE60128019T2 DE60128019T2 (de) 2007-12-27

Family

ID=24080027

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60128019T Expired - Fee Related DE60128019T2 (de) 2000-03-09 2001-01-08 Bildsensorstruktur und Herstellungsverfahren dazu

Country Status (5)

Country Link
US (2) US6465824B1 (de)
EP (1) EP1132968B1 (de)
JP (1) JP2001274371A (de)
DE (1) DE60128019T2 (de)
TW (1) TW503573B (de)

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US7612371B2 (en) * 2006-01-17 2009-11-03 International Business Machines Corporation Structure to monitor arcing in the processing steps of metal layer build on silicon-on-insulator semiconductors
US8735797B2 (en) 2009-12-08 2014-05-27 Zena Technologies, Inc. Nanowire photo-detector grown on a back-side illuminated image sensor
US8835831B2 (en) 2010-06-22 2014-09-16 Zena Technologies, Inc. Polarized light detecting device and fabrication methods of the same
US9299866B2 (en) 2010-12-30 2016-03-29 Zena Technologies, Inc. Nanowire array based solar energy harvesting device
US8229255B2 (en) 2008-09-04 2012-07-24 Zena Technologies, Inc. Optical waveguides in image sensors
US8889455B2 (en) 2009-12-08 2014-11-18 Zena Technologies, Inc. Manufacturing nanowire photo-detector grown on a back-side illuminated image sensor
US8546742B2 (en) 2009-06-04 2013-10-01 Zena Technologies, Inc. Array of nanowires in a single cavity with anti-reflective coating on substrate
US8890271B2 (en) * 2010-06-30 2014-11-18 Zena Technologies, Inc. Silicon nitride light pipes for image sensors
US9343490B2 (en) 2013-08-09 2016-05-17 Zena Technologies, Inc. Nanowire structured color filter arrays and fabrication method of the same
US9478685B2 (en) 2014-06-23 2016-10-25 Zena Technologies, Inc. Vertical pillar structured infrared detector and fabrication method for the same
US8866065B2 (en) 2010-12-13 2014-10-21 Zena Technologies, Inc. Nanowire arrays comprising fluorescent nanowires
US9515218B2 (en) 2008-09-04 2016-12-06 Zena Technologies, Inc. Vertical pillar structured photovoltaic devices with mirrors and optical claddings
US8748799B2 (en) 2010-12-14 2014-06-10 Zena Technologies, Inc. Full color single pixel including doublet or quadruplet si nanowires for image sensors
US8274039B2 (en) 2008-11-13 2012-09-25 Zena Technologies, Inc. Vertical waveguides with various functionality on integrated circuits
US8269985B2 (en) 2009-05-26 2012-09-18 Zena Technologies, Inc. Determination of optimal diameters for nanowires
US8519379B2 (en) 2009-12-08 2013-08-27 Zena Technologies, Inc. Nanowire structured photodiode with a surrounding epitaxially grown P or N layer
US9000353B2 (en) 2010-06-22 2015-04-07 President And Fellows Of Harvard College Light absorption and filtering properties of vertically oriented semiconductor nano wires
US8299472B2 (en) 2009-12-08 2012-10-30 Young-June Yu Active pixel sensor with nanowire structured photodetectors
US8791470B2 (en) 2009-10-05 2014-07-29 Zena Technologies, Inc. Nano structured LEDs
US9082673B2 (en) 2009-10-05 2015-07-14 Zena Technologies, Inc. Passivated upstanding nanostructures and methods of making the same
US9406709B2 (en) 2010-06-22 2016-08-02 President And Fellows Of Harvard College Methods for fabricating and using nanowires
US8507840B2 (en) 2010-12-21 2013-08-13 Zena Technologies, Inc. Vertically structured passive pixel arrays and methods for fabricating the same
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US8106487B2 (en) * 2008-12-23 2012-01-31 Pratt & Whitney Rocketdyne, Inc. Semiconductor device having an inorganic coating layer applied over a junction termination extension
US9310923B2 (en) 2010-12-03 2016-04-12 Apple Inc. Input device for touch sensitive devices
US9329703B2 (en) 2011-06-22 2016-05-03 Apple Inc. Intelligent stylus
US8928635B2 (en) 2011-06-22 2015-01-06 Apple Inc. Active stylus
US8638320B2 (en) 2011-06-22 2014-01-28 Apple Inc. Stylus orientation detection
JP2013243319A (ja) * 2012-05-23 2013-12-05 Konica Minolta Inc 放射線画像撮影装置
US9557845B2 (en) 2012-07-27 2017-01-31 Apple Inc. Input device for and method of communication with capacitive devices through frequency variation
US9176604B2 (en) 2012-07-27 2015-11-03 Apple Inc. Stylus device
US9652090B2 (en) 2012-07-27 2017-05-16 Apple Inc. Device for digital communication through capacitive coupling
US9935152B2 (en) 2012-12-27 2018-04-03 General Electric Company X-ray detector having improved noise performance
US10048775B2 (en) 2013-03-14 2018-08-14 Apple Inc. Stylus detection and demodulation
US9939935B2 (en) 2013-07-31 2018-04-10 Apple Inc. Scan engine for touch controller architecture
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US9917133B2 (en) * 2013-12-12 2018-03-13 General Electric Company Optoelectronic device with flexible substrate
EP3117204B1 (de) 2014-03-13 2021-06-16 General Electric Company Gekrümmter digitaler röntgenstrahldetektor zur schweissnahtprüfung
US10067618B2 (en) 2014-12-04 2018-09-04 Apple Inc. Coarse scan and targeted active mode scan for touch
US10474277B2 (en) 2016-05-31 2019-11-12 Apple Inc. Position-based stylus communication
EP3355355B1 (de) * 2017-01-27 2019-03-13 Detection Technology Oy Asymmetrisch positionierte schutzringkontakte
JP7308595B2 (ja) * 2018-07-02 2023-07-14 Ｔｉａｎｍａ Ｊａｐａｎ株式会社 イメージセンサ

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Also Published As

Publication number Publication date
EP1132968A2 (de) 2001-09-12
JP2001274371A (ja) 2001-10-05
TW503573B (en) 2002-09-21
EP1132968A3 (de) 2005-03-30
US6465824B1 (en) 2002-10-15
EP1132968B1 (de) 2007-04-25
DE60128019T2 (de) 2007-12-27
US6680216B2 (en) 2004-01-20
US20020195601A1 (en) 2002-12-26

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee