DE60118104D1 - Feldemissionsvorrichtung und Herstellungsverfahren dafür - Google Patents

Feldemissionsvorrichtung und Herstellungsverfahren dafür

Info

Publication number
DE60118104D1
DE60118104D1 DE60118104T DE60118104T DE60118104D1 DE 60118104 D1 DE60118104 D1 DE 60118104D1 DE 60118104 T DE60118104 T DE 60118104T DE 60118104 T DE60118104 T DE 60118104T DE 60118104 D1 DE60118104 D1 DE 60118104D1
Authority
DE
Germany
Prior art keywords
manufacturing
field emission
emission device
field
emission
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60118104T
Other languages
English (en)
Other versions
DE60118104T2 (de
Inventor
Jun-Hee Choi
Seung-Nam Cha
Hang-Woo Lee
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung SDI Co Ltd
Original Assignee
Samsung SDI Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung SDI Co Ltd filed Critical Samsung SDI Co Ltd
Publication of DE60118104D1 publication Critical patent/DE60118104D1/de
Application granted granted Critical
Publication of DE60118104T2 publication Critical patent/DE60118104T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/30—Cold cathodes, e.g. field-emissive cathode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J3/00—Details of electron-optical or ion-optical arrangements or of ion traps common to two or more basic types of discharge tubes or lamps
    • H01J3/02—Electron guns
    • H01J3/021—Electron guns using a field emission, photo emission, or secondary emission electron source
    • H01J3/022—Electron guns using a field emission, photo emission, or secondary emission electron source with microengineered cathode, e.g. Spindt-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/30—Cold cathodes, e.g. field-emissive cathode
    • H01J1/304—Field-emissive cathodes
    • H01J1/3042—Field-emissive cathodes microengineered, e.g. Spindt-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02—Manufacture of electrodes or electrode systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02—Manufacture of electrodes or electrode systems
    • H01J9/022—Manufacture of electrodes or electrode systems of cold cathodes
    • H01J9/025—Manufacture of electrodes or electrode systems of cold cathodes of field emission cathodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Cold Cathode And The Manufacture (AREA)
DE60118104T 2000-01-05 2001-01-04 Feldemissionsvorrichtung und Herstellungsverfahren dafür Expired - Lifetime DE60118104T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR2000000361 2000-01-05
KR10-2000-0000361A KR100464314B1 (ko) 2000-01-05 2000-01-05 전계방출소자 및 그 제조방법

Publications (2)

Publication Number Publication Date
DE60118104D1 true DE60118104D1 (de) 2006-05-11
DE60118104T2 DE60118104T2 (de) 2006-11-09

Family

ID=36217534

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60118104T Expired - Lifetime DE60118104T2 (de) 2000-01-05 2001-01-04 Feldemissionsvorrichtung und Herstellungsverfahren dafür

Country Status (5)

Country Link
US (2) US6632114B2 (de)
EP (1) EP1115134B1 (de)
JP (1) JP2001216887A (de)
KR (1) KR100464314B1 (de)
DE (1) DE60118104T2 (de)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100480771B1 (ko) * 2000-01-05 2005-04-06 삼성에스디아이 주식회사 전계방출소자 및 그 제조방법
KR100480772B1 (ko) * 2000-01-05 2005-04-06 삼성에스디아이 주식회사 나노 스케일의 표면 거칠기를 가지는 마이크로 구조물의형성방법
KR100590524B1 (ko) * 2001-12-06 2006-06-15 삼성에스디아이 주식회사 포커싱 전극을 가지는 전계방출소자 및 그 제조방법
FR2836279B1 (fr) * 2002-02-19 2004-09-24 Commissariat Energie Atomique Structure de cathode pour ecran emissif
KR100576733B1 (ko) * 2003-01-15 2006-05-03 학교법인 포항공과대학교 일체형 3극구조 전계방출디스플레이 및 그 제조 방법
US7279686B2 (en) * 2003-07-08 2007-10-09 Biomed Solutions, Llc Integrated sub-nanometer-scale electron beam systems
KR100548250B1 (ko) * 2003-08-09 2006-02-02 엘지전자 주식회사 표면 전도형 전계 방출 소자의 매트릭스 구조
KR100523840B1 (ko) * 2003-08-27 2005-10-27 한국전자통신연구원 전계 방출 소자
KR101064480B1 (ko) * 2004-06-29 2011-09-15 삼성에스디아이 주식회사 전자방출소자 및 이를 이용한 전자방출 표시장치
JP2006080046A (ja) * 2004-09-13 2006-03-23 Ngk Insulators Ltd 電子放出装置
CN100543913C (zh) * 2005-02-25 2009-09-23 清华大学 场发射显示装置
KR20070041983A (ko) * 2005-10-17 2007-04-20 삼성에스디아이 주식회사 전자 방출 표시 디바이스
KR20070044574A (ko) * 2005-10-25 2007-04-30 삼성에스디아이 주식회사 전자 방출 디바이스와 이를 이용한 전자 방출 표시디바이스
KR20070046650A (ko) * 2005-10-31 2007-05-03 삼성에스디아이 주식회사 전자 방출 디바이스
US7556550B2 (en) * 2005-11-30 2009-07-07 Motorola, Inc. Method for preventing electron emission from defects in a field emission device
FR2899572B1 (fr) * 2006-04-05 2008-09-05 Commissariat Energie Atomique Protection de cavites debouchant sur une face d'un element microstructure
JP2009054317A (ja) * 2007-08-23 2009-03-12 Nippon Hoso Kyokai <Nhk> 冷陰極電子源基板及び冷陰極ディスプレイ
US8260174B2 (en) 2008-06-30 2012-09-04 Xerox Corporation Micro-tip array as a charging device including a system of interconnected air flow channels
CN103854935B (zh) * 2012-12-06 2016-09-07 清华大学 场发射阴极装置及场发射器件
US10147745B2 (en) 2015-04-01 2018-12-04 Shanghai Tianma Micro-electronics Co., Ltd. Array substrate, display panel and display device
CN104730782B (zh) * 2015-04-01 2018-03-27 上海天马微电子有限公司 一种阵列基板、显示面板和显示装置

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4943343A (en) * 1989-08-14 1990-07-24 Zaher Bardai Self-aligned gate process for fabricating field emitter arrays
US5534743A (en) * 1993-03-11 1996-07-09 Fed Corporation Field emission display devices, and field emission electron beam source and isolation structure components therefor
FR2726689B1 (fr) * 1994-11-08 1996-11-29 Commissariat Energie Atomique Source d'electrons a effet de champ et procede de fabrication de cette source, application aux dispositifs de visualisation par cathodoluminescence
US5674592A (en) * 1995-05-04 1997-10-07 Minnesota Mining And Manufacturing Company Functionalized nanostructured films
KR100266517B1 (ko) * 1995-07-07 2000-09-15 가네꼬 히사시 전계 방출 냉 캐소드 및 개선된 게이트 구조를 갖는 전자 총
KR970023568A (ko) * 1995-10-31 1997-05-30 윤종용 전계 방출 표시소자와 그 구동 방법 및 제조 방법
JPH09219144A (ja) * 1996-02-08 1997-08-19 Futaba Corp 電界放出カソードとその製造方法
US5726524A (en) * 1996-05-31 1998-03-10 Minnesota Mining And Manufacturing Company Field emission device having nanostructured emitters
JPH1012127A (ja) * 1996-06-24 1998-01-16 Nec Corp 電界電子放出装置
JP3171121B2 (ja) * 1996-08-29 2001-05-28 双葉電子工業株式会社 電界放出型表示装置
KR100365444B1 (ko) * 1996-09-18 2004-01-24 가부시끼가이샤 도시바 진공마이크로장치와이를이용한화상표시장치
US6020677A (en) * 1996-11-13 2000-02-01 E. I. Du Pont De Nemours And Company Carbon cone and carbon whisker field emitters
US5972235A (en) * 1997-02-28 1999-10-26 Candescent Technologies Corporation Plasma etching using polycarbonate mask and low pressure-high density plasma
US6002199A (en) * 1997-05-30 1999-12-14 Candescent Technologies Corporation Structure and fabrication of electron-emitting device having ladder-like emitter electrode
US6008062A (en) * 1997-10-31 1999-12-28 Candescent Technologies Corporation Undercutting technique for creating coating in spaced-apart segments
JP2000285795A (ja) * 1999-03-31 2000-10-13 Sony Corp 電子放出源およびその製造方法ならびにディスプレイ装置
US6464842B1 (en) * 1999-06-22 2002-10-15 President And Fellows Of Harvard College Control of solid state dimensional features
JP3312008B2 (ja) * 1999-06-30 2002-08-05 岡谷電機産業株式会社 電界電子放出型サージ吸収素子の製造方法
KR100480771B1 (ko) * 2000-01-05 2005-04-06 삼성에스디아이 주식회사 전계방출소자 및 그 제조방법

Also Published As

Publication number Publication date
US20010006325A1 (en) 2001-07-05
JP2001216887A (ja) 2001-08-10
US6632114B2 (en) 2003-10-14
EP1115134B1 (de) 2006-03-22
KR100464314B1 (ko) 2004-12-31
KR20010068441A (ko) 2001-07-23
US20040027052A1 (en) 2004-02-12
EP1115134A1 (de) 2001-07-11
DE60118104T2 (de) 2006-11-09
US6927534B2 (en) 2005-08-09

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Legal Events

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