DE60106966D1 - Beleuchtungssystem insbesondere für microlithographie - Google Patents
Beleuchtungssystem insbesondere für microlithographieInfo
- Publication number
- DE60106966D1 DE60106966D1 DE60106966T DE60106966T DE60106966D1 DE 60106966 D1 DE60106966 D1 DE 60106966D1 DE 60106966 T DE60106966 T DE 60106966T DE 60106966 T DE60106966 T DE 60106966T DE 60106966 D1 DE60106966 D1 DE 60106966D1
- Authority
- DE
- Germany
- Prior art keywords
- microlithography
- lighting system
- lighting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
-
- G—PHYSICS
- G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
- G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
- G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
- G21K1/06—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diffraction, refraction or reflection, e.g. monochromators
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70075—Homogenization of illumination intensity in the mask plane by using an integrator, e.g. fly's eye lens, facet mirror or glass rod, by using a diffusing optical element or by beam deflection
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70083—Non-homogeneous intensity distribution in the mask plane
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
- G03F7/70108—Off-axis setting using a light-guiding element, e.g. diffractive optical elements [DOEs] or light guides
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/7015—Details of optical elements
- G03F7/70166—Capillary or channel elements, e.g. nested extreme ultraviolet [EUV] mirrors or shells, optical fibers or light guides
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/702—Reflective illumination, i.e. reflective optical elements other than folding mirrors, e.g. extreme ultraviolet [EUV] illumination systems
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70233—Optical aspects of catoptric systems, i.e. comprising only reflective elements, e.g. extreme ultraviolet [EUV] projection systems
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70358—Scanning exposure, i.e. relative movement of patterned beam and workpiece during imaging
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
- G03F7/70883—Environment aspects, e.g. pressure of beam-path gas, temperature of optical system
- G03F7/70891—Temperature
-
- G—PHYSICS
- G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
- G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
- G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
- G21K1/06—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diffraction, refraction or reflection, e.g. monochromators
- G21K1/067—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diffraction, refraction or reflection, e.g. monochromators using surface reflection, e.g. grazing incidence mirrors, gratings
-
- G—PHYSICS
- G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
- G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
- G21K2201/00—Arrangements for handling radiation or particles
- G21K2201/06—Arrangements for handling radiation or particles using diffractive, refractive or reflecting elements
-
- G—PHYSICS
- G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
- G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
- G21K2201/00—Arrangements for handling radiation or particles
- G21K2201/06—Arrangements for handling radiation or particles using diffractive, refractive or reflecting elements
- G21K2201/064—Arrangements for handling radiation or particles using diffractive, refractive or reflecting elements having a curved surface
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Health & Medical Sciences (AREA)
- Environmental & Geological Engineering (AREA)
- Public Health (AREA)
- General Engineering & Computer Science (AREA)
- Nanotechnology (AREA)
- Chemical & Material Sciences (AREA)
- High Energy & Nuclear Physics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Epidemiology (AREA)
- Toxicology (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Atmospheric Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Lenses (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Microscoopes, Condenser (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/679,718 US6438199B1 (en) | 1998-05-05 | 2000-09-29 | Illumination system particularly for microlithography |
US679718 | 2000-09-29 | ||
PCT/EP2001/011233 WO2002027400A2 (en) | 2000-09-29 | 2001-09-28 | Illumination system particularly for microlithography |
Publications (2)
Publication Number | Publication Date |
---|---|
DE60106966D1 true DE60106966D1 (de) | 2004-12-09 |
DE60106966T2 DE60106966T2 (de) | 2006-07-06 |
Family
ID=24728065
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60106966T Expired - Lifetime DE60106966T2 (de) | 2000-09-29 | 2001-09-28 | Beleuchtungssystem, insbesondere für Mikrolithographie |
Country Status (7)
Country | Link |
---|---|
US (1) | US6438199B1 (de) |
EP (4) | EP1320856A2 (de) |
JP (4) | JP2004510345A (de) |
KR (2) | KR20030097784A (de) |
DE (1) | DE60106966T2 (de) |
TW (1) | TW594794B (de) |
WO (4) | WO2002027402A2 (de) |
Families Citing this family (113)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE10053587A1 (de) * | 2000-10-27 | 2002-05-02 | Zeiss Carl | Beleuchtungssystem mit variabler Einstellung der Ausleuchtung |
US6947120B2 (en) * | 1998-05-05 | 2005-09-20 | Carl Zeiss Smt Ag | Illumination system particularly for microlithography |
US7006595B2 (en) * | 1998-05-05 | 2006-02-28 | Carl Zeiss Semiconductor Manufacturing Technologies Ag | Illumination system particularly for microlithography |
DE10100265A1 (de) * | 2001-01-08 | 2002-07-11 | Zeiss Carl | Beleuchtungssystem mit Rasterelementen unterschiedlicher Größe |
US20070030948A1 (en) * | 1998-05-05 | 2007-02-08 | Carl Zeiss Smt Ag | Illumination system with field mirrors for producing uniform scanning energy |
DE19903807A1 (de) * | 1998-05-05 | 1999-11-11 | Zeiss Carl Fa | Beleuchtungssystem insbesondere für die EUV-Lithographie |
US7109497B2 (en) * | 1998-05-05 | 2006-09-19 | Carl Zeiss Smt Ag | Illumination system particularly for microlithography |
US6947124B2 (en) | 1998-05-05 | 2005-09-20 | Carl Zeiss Smt Ag | Illumination system particularly for microlithography |
US7142285B2 (en) * | 1998-05-05 | 2006-11-28 | Carl Zeiss Smt Ag | Illumination system particularly for microlithography |
US6859328B2 (en) | 1998-05-05 | 2005-02-22 | Carl Zeiss Semiconductor | Illumination system particularly for microlithography |
US7186983B2 (en) * | 1998-05-05 | 2007-03-06 | Carl Zeiss Smt Ag | Illumination system particularly for microlithography |
US20050002090A1 (en) * | 1998-05-05 | 2005-01-06 | Carl Zeiss Smt Ag | EUV illumination system having a folding geometry |
US7126137B2 (en) * | 1998-05-05 | 2006-10-24 | Carl Zeiss Smt Ag | Illumination system with field mirrors for producing uniform scanning energy |
US6858853B2 (en) * | 1998-05-05 | 2005-02-22 | Carl Zeiss Smt Ag | Illumination system particularly for microlithography |
US7329886B2 (en) * | 1998-05-05 | 2008-02-12 | Carl Zeiss Smt Ag | EUV illumination system having a plurality of light sources for illuminating an optical element |
USRE42065E1 (en) | 1998-05-05 | 2011-01-25 | Carl Zeiss Smt Ag | Illumination system particularly for microlithography |
DE19935404A1 (de) | 1999-07-30 | 2001-02-01 | Zeiss Carl Fa | Beleuchtungssystem mit mehreren Lichtquellen |
USRE41667E1 (en) * | 1998-05-05 | 2010-09-14 | Carl Zeiss Smt Ag | Illumination system particularly for microlithography |
WO2001009684A1 (de) * | 1999-07-30 | 2001-02-08 | Carl Zeiss | Steuerung der beleuchtungsverteilung in der austrittspupille eines euv-beleuchtungssystems |
US6856630B2 (en) * | 2000-02-02 | 2005-02-15 | Semiconductor Energy Laboratory Co., Ltd. | Beam homogenizer, laser irradiation apparatus, semiconductor device, and method of fabricating the semiconductor device |
EP1202100A3 (de) * | 2000-10-27 | 2005-04-06 | Carl Zeiss SMT AG | Beleuchtungssystem mit reduzierter Wärmebelastung |
TW573234B (en) * | 2000-11-07 | 2004-01-21 | Asml Netherlands Bv | Lithographic projection apparatus and integrated circuit device manufacturing method |
DE10138284A1 (de) * | 2001-08-10 | 2003-02-27 | Zeiss Carl | Beleuchtungssystem mit genesteten Kollektoren |
AU2002325359A1 (en) * | 2001-08-10 | 2003-02-24 | Carl Zeiss Smt Ag | Collector with fastening devices for fastening mirror shells |
JP2003185798A (ja) * | 2001-12-13 | 2003-07-03 | Nikon Corp | 軟x線光源装置およびeuv露光装置ならびに照明方法 |
DE60326063D1 (de) * | 2002-03-18 | 2009-03-19 | Asml Netherlands Bv | Lithographischer Apparat und Verfahren zur Herstellung eines Artikels |
US7333178B2 (en) * | 2002-03-18 | 2008-02-19 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7170587B2 (en) * | 2002-03-18 | 2007-01-30 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
JP4639352B2 (ja) | 2002-05-10 | 2011-02-23 | カール・ツァイス・エスエムティー・ゲーエムベーハー | 波長≦100nmで物体を検査する検査系 |
DE60312871T2 (de) * | 2002-08-26 | 2007-12-20 | Carl Zeiss Smt Ag | Gitter basierter spektraler filter zur unterdrückung von strahlung ausserhalb des nutzbandes in einem extrem-ultraviolett lithographiesystem |
WO2004031854A2 (de) | 2002-09-30 | 2004-04-15 | Carl Zeiss Smt Ag | Beleuchtungssystem für eine wellenlänge ≤ 193 nm mit sensoren zur bestimmung der ausleuchtung |
KR100958765B1 (ko) | 2002-12-19 | 2010-05-18 | 칼 짜이스 에스엠티 아게 | 향상된 집광기 광학계를 구비하는 조명 시스템 |
DE10308174B4 (de) * | 2003-02-24 | 2010-01-14 | Xtreme Technologies Gmbh | Anordnung zur Debrisreduktion bei einer Strahlungsquelle auf Basis eines Plasmas |
JP5026788B2 (ja) * | 2003-07-30 | 2012-09-19 | カール・ツァイス・エスエムティー・ゲーエムベーハー | マイクロリソグラフィの照明システム |
US7781750B2 (en) * | 2003-08-27 | 2010-08-24 | Carl Zeiss Smt Ag | Oblique mirror-type normal-incidence collector system for light sources, particularly EUV plasma discharge sources |
WO2005026843A2 (en) * | 2003-09-12 | 2005-03-24 | Carl Zeiss Smt Ag | Illumination system for a microlithography projection exposure installation |
DE10343333A1 (de) * | 2003-09-12 | 2005-04-14 | Carl Zeiss Smt Ag | Beleuchtungssystem für eine Mikrolithographie-Projektionsbelichtungsanlage |
CN101799637B (zh) | 2004-01-16 | 2012-07-04 | 卡尔蔡司Smt有限责任公司 | 照明光学装置、显微光刻投射系统及装置制造方法 |
US20070019179A1 (en) | 2004-01-16 | 2007-01-25 | Damian Fiolka | Polarization-modulating optical element |
JP4551666B2 (ja) * | 2004-02-19 | 2010-09-29 | キヤノン株式会社 | 照明装置及び露光装置 |
US20060138349A1 (en) * | 2004-12-27 | 2006-06-29 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7405871B2 (en) * | 2005-02-08 | 2008-07-29 | Intel Corporation | Efficient EUV collector designs |
EP1872176A2 (de) | 2005-04-20 | 2008-01-02 | Carl Zeiss SMT AG | Projektionsbelichtungssystem, verfahren zur herstellung eines mikrostrukturierten strukturellen elements mithilfe eines derartigen projektionsbelichtungssystems und für die verwendung in einem derartigen system angepasstes optisches polarisationselement |
EP1894063A1 (de) * | 2005-06-21 | 2008-03-05 | Carl Zeiss SMT AG | Doppelt facettiertes beleuchtungssystem mit abschwächungselementen am pupillenfacettenspiegel |
US20070143032A1 (en) * | 2005-09-15 | 2007-06-21 | Carl Zeiss Smt Ag | Apparatus and method for the detection of a surface reaction, especially for cleaning of an arbitrary two-dimensional surface or three-dimensional body |
JP2007150295A (ja) | 2005-11-10 | 2007-06-14 | Carl Zeiss Smt Ag | ラスタ要素を有する光学装置、及びこの光学装置を有する照射システム |
DE102006017336B4 (de) * | 2006-04-11 | 2011-07-28 | Carl Zeiss SMT GmbH, 73447 | Beleuchtungssystem mit Zoomobjektiv |
DE102006031654A1 (de) * | 2006-04-24 | 2007-10-25 | Carl Zeiss Smt Ag | Facettenspiegel mit einer Vielzahl von Spiegelsegmenten |
DE102006036064A1 (de) * | 2006-08-02 | 2008-02-07 | Carl Zeiss Smt Ag | Beleuchtungssystem für eine Projektionsbelichtungsanlage mit Wellenlängen ≦ 193 nm |
DE102006039760A1 (de) * | 2006-08-24 | 2008-03-13 | Carl Zeiss Smt Ag | Beleuchtungssystem mit einem Detektor zur Aufnahme einer Lichtintensität |
DE102007008448A1 (de) | 2007-02-19 | 2008-08-21 | Carl Zeiss Smt Ag | Verfahren zur Herstellung von Spiegelfacetten für einen Facettenspiegel |
WO2008101664A1 (en) * | 2007-02-20 | 2008-08-28 | Carl Zeiss Smt Ag | Optical element with multiple primary light sources |
US20080257883A1 (en) | 2007-04-19 | 2008-10-23 | Inbev S.A. | Integrally blow-moulded bag-in-container having an inner layer and the outer layer made of the same material and preform for making it |
US20080259298A1 (en) * | 2007-04-19 | 2008-10-23 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US20150266621A1 (en) | 2007-04-19 | 2015-09-24 | Anheuser-Busch Inbev S.A. | Integrally Blow-Moulded Bag-in-Container Having Interface Vents Opening to the Atmosphere at Location Adjacent to Bag's Mouth, Preform for Making It; and Processes for Producing the Preform and Bag-in-Container |
US20080258356A1 (en) | 2007-04-19 | 2008-10-23 | Inbev S.A. | Integrally blow-moulded bag-in-container comprising an inner layer and an outer layer comprising energy absorbing additives, and preform for making it |
US20080259304A1 (en) * | 2007-04-20 | 2008-10-23 | Asml Netherlands B.V. | Lithographic apparatus and method |
JP5077724B2 (ja) * | 2007-06-07 | 2012-11-21 | カール・ツァイス・エスエムティー・ゲーエムベーハー | マイクロリソグラフィツール用の反射照明システム |
US20090015814A1 (en) * | 2007-07-11 | 2009-01-15 | Carl Zeiss Smt Ag | Detector for registering a light intensity, and illumination system equipped with the detector |
DE102008002377A1 (de) | 2007-07-17 | 2009-01-22 | Carl Zeiss Smt Ag | Beleuchtungssystem sowie Projektionsbelichtungsanlage für die Mikrolithografie mit einem derartigen Beleuchtungssystem |
US20090040493A1 (en) * | 2007-08-09 | 2009-02-12 | Hideki Komatsuda | Illumination optical system, illumination optical apparatus, exposure apparatus, and device manufacturing method |
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2000
- 2000-09-29 US US09/679,718 patent/US6438199B1/en not_active Expired - Lifetime
-
2001
- 2001-09-28 EP EP01985763A patent/EP1320856A2/de not_active Withdrawn
- 2001-09-28 TW TW090124045A patent/TW594794B/zh not_active IP Right Cessation
- 2001-09-28 WO PCT/EP2001/011273 patent/WO2002027402A2/en active Application Filing
- 2001-09-28 EP EP01982375A patent/EP1320854B1/de not_active Expired - Lifetime
- 2001-09-28 EP EP01985762A patent/EP1320855A2/de not_active Withdrawn
- 2001-09-28 JP JP2002530923A patent/JP2004510345A/ja active Pending
- 2001-09-28 KR KR10-2003-7003497A patent/KR20030097784A/ko not_active Application Discontinuation
- 2001-09-28 JP JP2002530917A patent/JP2004510340A/ja active Pending
- 2001-09-28 JP JP2002530919A patent/JP2004510342A/ja active Pending
- 2001-09-28 KR KR10-2003-7004516A patent/KR20040004384A/ko not_active Application Discontinuation
- 2001-09-28 WO PCT/EP2001/011248 patent/WO2002027401A2/en active Application Filing
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- 2001-09-28 JP JP2002530918A patent/JP4804704B2/ja not_active Expired - Fee Related
- 2001-09-28 EP EP01980450A patent/EP1320853A2/de not_active Withdrawn
- 2001-09-28 WO PCT/EP2001/011232 patent/WO2002027406A2/en active Application Filing
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EP1320854B1 (de) | 2004-11-03 |
EP1320856A2 (de) | 2003-06-25 |
JP2004510340A (ja) | 2004-04-02 |
KR20030097784A (ko) | 2003-12-31 |
WO2002027406A2 (en) | 2002-04-04 |
TW594794B (en) | 2004-06-21 |
EP1320853A2 (de) | 2003-06-25 |
JP2004510342A (ja) | 2004-04-02 |
EP1320855A2 (de) | 2003-06-25 |
WO2002027406A3 (en) | 2002-07-04 |
JP4804704B2 (ja) | 2011-11-02 |
DE60106966T2 (de) | 2006-07-06 |
WO2002027402A2 (en) | 2002-04-04 |
JP2004510345A (ja) | 2004-04-02 |
JP2004510341A (ja) | 2004-04-02 |
KR20040004384A (ko) | 2004-01-13 |
WO2002027401A3 (en) | 2002-07-04 |
US6438199B1 (en) | 2002-08-20 |
EP1320854A2 (de) | 2003-06-25 |
WO2002027401A2 (en) | 2002-04-04 |
WO2002027400A2 (en) | 2002-04-04 |
WO2002027400A3 (en) | 2002-07-11 |
WO2002027402A3 (en) | 2002-07-11 |
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Owner name: CARL ZEISS SMT GMBH, 73447 OBERKOCHEN, DE |