DE60100205T2 - Nichtflüchtiges Halbleiterspeicherbauelement und dessen Herstellungsverfahren - Google Patents
Nichtflüchtiges Halbleiterspeicherbauelement und dessen HerstellungsverfahrenInfo
- Publication number
- DE60100205T2 DE60100205T2 DE60100205T DE60100205T DE60100205T2 DE 60100205 T2 DE60100205 T2 DE 60100205T2 DE 60100205 T DE60100205 T DE 60100205T DE 60100205 T DE60100205 T DE 60100205T DE 60100205 T2 DE60100205 T2 DE 60100205T2
- Authority
- DE
- Germany
- Prior art keywords
- manufacturing
- memory device
- semiconductor memory
- volatile semiconductor
- volatile
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66825—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a floating gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2000221943A JP4819215B2 (ja) | 2000-07-24 | 2000-07-24 | 不揮発性半導体記憶装置およびその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE60100205D1 DE60100205D1 (de) | 2003-05-28 |
DE60100205T2 true DE60100205T2 (de) | 2003-12-11 |
Family
ID=18716259
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60100205T Expired - Lifetime DE60100205T2 (de) | 2000-07-24 | 2001-05-09 | Nichtflüchtiges Halbleiterspeicherbauelement und dessen Herstellungsverfahren |
Country Status (5)
Country | Link |
---|---|
US (1) | US6635920B2 (de) |
EP (2) | EP1178533B1 (de) |
JP (1) | JP4819215B2 (de) |
KR (1) | KR100413149B1 (de) |
DE (1) | DE60100205T2 (de) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003203997A (ja) * | 2002-01-07 | 2003-07-18 | Mitsubishi Electric Corp | 不揮発性半導体記憶装置及びその製造方法 |
DE10352785A1 (de) * | 2003-11-12 | 2005-06-02 | Infineon Technologies Ag | Speichertransistor und Speichereinheit mit asymmetrischem Kanaldotierbereich |
US7294882B2 (en) * | 2004-09-28 | 2007-11-13 | Sandisk Corporation | Non-volatile memory with asymmetrical doping profile |
KR100635201B1 (ko) * | 2005-03-10 | 2006-10-16 | 주식회사 하이닉스반도체 | 플래쉬 메모리 소자의 제조방법 |
JP4314252B2 (ja) | 2006-07-03 | 2009-08-12 | 株式会社東芝 | 不揮発性半導体記憶装置およびその製造方法 |
JP2009049230A (ja) * | 2007-08-21 | 2009-03-05 | Panasonic Corp | 半導体記憶装置及びその製造方法 |
TWI392064B (zh) * | 2009-04-03 | 2013-04-01 | Eon Silicon Solution Inc | Method of Making NOR - type Flash Memory |
FR2974523B1 (fr) * | 2011-04-29 | 2014-05-16 | Ntn Snr Roulements | Procede de fabrication de deux rondelles comprenant chacune une piste de roulement |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR910006249B1 (ko) * | 1983-04-01 | 1991-08-17 | 가부시기가이샤 히다찌세이사꾸쇼 | 반도체 장치 |
JPH0372682A (ja) | 1989-08-11 | 1991-03-27 | Hitachi Ltd | 不揮発性半導体メモリーおよびその製造方法 |
US5190887A (en) | 1991-12-30 | 1993-03-02 | Intel Corporation | Method of making electrically erasable and electrically programmable memory cell with extended cycling endurance |
US5346842A (en) | 1992-02-04 | 1994-09-13 | National Semiconductor Corporation | Method of making alternate metal/source virtual ground flash EPROM cell array |
JP3036565B2 (ja) | 1992-08-28 | 2000-04-24 | 日本電気株式会社 | 不揮発性半導体記憶装置の製造方法 |
JP2848223B2 (ja) * | 1993-12-01 | 1999-01-20 | 日本電気株式会社 | 不揮発性半導体記憶装置の消去方法及び製造方法 |
JP3359406B2 (ja) | 1993-12-27 | 2002-12-24 | 三菱電機株式会社 | 半導体装置の製造方法 |
DE69413960T2 (de) | 1994-07-18 | 1999-04-01 | St Microelectronics Srl | Nicht-flüchtiger EPROM und Flash-EEPROM-Speicher und Verfahren zu seiner Herstellung |
JPH0888289A (ja) * | 1994-09-20 | 1996-04-02 | Sony Corp | 半導体記憶装置の製造方法 |
JP2757814B2 (ja) | 1995-03-30 | 1998-05-25 | 日本電気株式会社 | 不揮発性半導体記憶装置およびその製造方法 |
JPH08316343A (ja) * | 1995-05-17 | 1996-11-29 | Toshiba Corp | 不揮発性半導体記憶装置 |
JP3498116B2 (ja) * | 1995-10-26 | 2004-02-16 | 株式会社ルネサステクノロジ | 不揮発性半導体記憶装置 |
JPH09148542A (ja) | 1995-11-17 | 1997-06-06 | Sharp Corp | 半導体記憶装置及びその製造方法 |
JP3976839B2 (ja) * | 1996-07-09 | 2007-09-19 | 株式会社ルネサステクノロジ | 不揮発性メモリシステムおよび不揮発性半導体メモリ |
JP3082750B2 (ja) * | 1998-07-27 | 2000-08-28 | 株式会社日立製作所 | 半導体集積回路装置及びその製造方法 |
JP2000068392A (ja) * | 1998-08-24 | 2000-03-03 | Mitsubishi Electric Corp | 不揮発性半導体記憶装置およびその製造方法 |
-
2000
- 2000-07-24 JP JP2000221943A patent/JP4819215B2/ja not_active Expired - Fee Related
-
2001
- 2001-01-26 US US09/769,465 patent/US6635920B2/en not_active Expired - Lifetime
- 2001-03-29 KR KR10-2001-0016407A patent/KR100413149B1/ko not_active IP Right Cessation
- 2001-05-09 EP EP01111341A patent/EP1178533B1/de not_active Expired - Lifetime
- 2001-05-09 DE DE60100205T patent/DE60100205T2/de not_active Expired - Lifetime
- 2001-05-09 EP EP02013734A patent/EP1251564A3/de not_active Withdrawn
Also Published As
Publication number | Publication date |
---|---|
KR20020008741A (ko) | 2002-01-31 |
US20020008276A1 (en) | 2002-01-24 |
JP4819215B2 (ja) | 2011-11-24 |
EP1178533B1 (de) | 2003-04-23 |
EP1251564A3 (de) | 2002-12-18 |
KR100413149B1 (ko) | 2003-12-31 |
EP1178533A1 (de) | 2002-02-06 |
EP1251564A2 (de) | 2002-10-23 |
US6635920B2 (en) | 2003-10-21 |
DE60100205D1 (de) | 2003-05-28 |
JP2002043443A (ja) | 2002-02-08 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |