DE60041299D1 - Testsondenkarte und Testverfahren für eine Halbleitervorrichtung - Google Patents

Testsondenkarte und Testverfahren für eine Halbleitervorrichtung

Info

Publication number
DE60041299D1
DE60041299D1 DE60041299T DE60041299T DE60041299D1 DE 60041299 D1 DE60041299 D1 DE 60041299D1 DE 60041299 T DE60041299 T DE 60041299T DE 60041299 T DE60041299 T DE 60041299T DE 60041299 D1 DE60041299 D1 DE 60041299D1
Authority
DE
Germany
Prior art keywords
test
semiconductor device
probe card
test method
test probe
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60041299T
Other languages
English (en)
Inventor
Shigeyuki Maruyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Semiconductor Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Application granted granted Critical
Publication of DE60041299D1 publication Critical patent/DE60041299D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/02—General constructional details
    • G01R1/04—Housings; Supporting members; Arrangements of terminals
    • G01R1/0408—Test fixtures or contact fields; Connectors or connecting adaptors; Test clips; Test sockets
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/02—General constructional details
    • G01R1/06—Measuring leads; Measuring probes
    • G01R1/067—Measuring probes
    • G01R1/073—Multiple probes
    • G01R1/07307—Multiple probes with individual probe elements, e.g. needles, cantilever beams or bump contacts, fixed in relation to each other, e.g. bed of nails fixture or probe card
    • G01R1/07314—Multiple probes with individual probe elements, e.g. needles, cantilever beams or bump contacts, fixed in relation to each other, e.g. bed of nails fixture or probe card the body of the probe being perpendicular to test object, e.g. bed of nails or probe with bump contacts on a rigid support
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/282—Testing of electronic circuits specially adapted for particular applications not provided for elsewhere
    • G01R31/2831—Testing of materials or semi-finished products, e.g. semiconductor wafers or substrates

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Measuring Leads Or Probes (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)
DE60041299T 1999-04-16 2000-04-14 Testsondenkarte und Testverfahren für eine Halbleitervorrichtung Expired - Lifetime DE60041299D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11006199A JP3565086B2 (ja) 1999-04-16 1999-04-16 プローブカード及び半導体装置の試験方法

Publications (1)

Publication Number Publication Date
DE60041299D1 true DE60041299D1 (de) 2009-02-26

Family

ID=14526093

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60041299T Expired - Lifetime DE60041299D1 (de) 1999-04-16 2000-04-14 Testsondenkarte und Testverfahren für eine Halbleitervorrichtung

Country Status (7)

Country Link
US (1) US6433563B1 (de)
EP (2) EP2023386A3 (de)
JP (1) JP3565086B2 (de)
KR (1) KR100564046B1 (de)
CN (1) CN1192422C (de)
DE (1) DE60041299D1 (de)
TW (1) TW425649B (de)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000258495A (ja) * 1999-03-12 2000-09-22 Oki Electric Ind Co Ltd 半導体デバイス試験装置
US7143500B2 (en) * 2001-06-25 2006-12-05 Micron Technology, Inc. Method to prevent damage to probe card
CN1316253C (zh) * 2003-07-15 2007-05-16 旺宏电子股份有限公司 可掀式探针卡反面调针治具及其调针方法
US7332921B2 (en) * 2004-03-26 2008-02-19 Cypress Semiconductor Corporation Probe card and method for constructing same
JP4727948B2 (ja) * 2004-05-24 2011-07-20 東京エレクトロン株式会社 プローブカードに用いられる積層基板
WO2006051880A1 (ja) * 2004-11-11 2006-05-18 Jsr Corporation シート状プローブおよびプローブカードならびにウエハの検査方法
WO2006051878A1 (ja) * 2004-11-11 2006-05-18 Jsr Corporation シート状プローブおよびプローブカードならびにウエハの検査方法
JP2006184136A (ja) * 2004-12-28 2006-07-13 Aitesu:Kk 半導体解析装置およびその方法
JP2006284384A (ja) * 2005-03-31 2006-10-19 Fujitsu Ltd 半導体装置の試験装置及び試験方法
US7535021B2 (en) * 2005-11-01 2009-05-19 Alpha & Omega Semiconductor, Ltd. Calibration technique for measuring gate resistance of power MOS gate device at water level
WO2007146291A2 (en) * 2006-06-09 2007-12-21 Octavian Scientific, Inc. Method and apparatus for fixed-form multi-planar extension of electrical conductors beyond the margins of a substrate
TWI445109B (zh) * 2006-07-07 2014-07-11 Advanced Inquiry Systems Inc 平面延伸電導體超越基材邊緣的方法和設備
US7489148B2 (en) * 2006-07-28 2009-02-10 Advanced Inquiry Systems, Inc. Methods for access to a plurality of unsingulated integrated circuits of a wafer using single-sided edge-extended wafer translator
US20090189299A1 (en) * 2008-01-30 2009-07-30 Texas Instruments Incorporated Method of forming a probe pad layout/design, and related device
US9176186B2 (en) 2009-08-25 2015-11-03 Translarity, Inc. Maintaining a wafer/wafer translator pair in an attached state free of a gasket disposed
US8362797B2 (en) * 2009-08-25 2013-01-29 Advanced Inquiry Systems, Inc. Maintaining a wafer/wafer translator pair in an attached state free of a gasket disposed therebetween
JP5372706B2 (ja) * 2009-11-04 2013-12-18 株式会社日本マイクロニクス プローブ針ガイド部材及びこれを備えたプローブカード並びにそれを用いる半導体装置の試験方法
JP5379065B2 (ja) * 2010-04-21 2013-12-25 新光電気工業株式会社 プローブカード及びその製造方法
SG189154A1 (en) 2010-09-28 2013-05-31 Advanced Inquiry Systems Inc Wafer testing systems and associated methods of use and manufacture
JP5079890B2 (ja) * 2011-01-05 2012-11-21 東京エレクトロン株式会社 積層基板及びプローブカード
JP5752002B2 (ja) * 2011-10-04 2015-07-22 株式会社アドバンテスト 試験用キャリア
TWI490500B (zh) * 2012-05-23 2015-07-01 Advantest Corp Test vehicle
CN102707100A (zh) * 2012-05-25 2012-10-03 工业和信息化部电子第五研究所 倒扣电气互连衬底的裸芯片测试装置
TWI454710B (zh) * 2012-09-19 2014-10-01 Mpi Corp Probe card and its manufacturing method
KR101407871B1 (ko) 2012-11-16 2014-06-17 주식회사 오킨스전자 탄성체 테스트 소켓 구조
CN104520981B (zh) * 2013-04-03 2017-11-17 山东晶泰星光电科技有限公司 一种测试倒装led芯片的吸嘴、方法及测试机构
CN104569777B (zh) * 2014-12-25 2018-01-05 深圳市摩西尔电子有限公司 一种图像数据采集设备的设备运行机台
JP6496142B2 (ja) * 2014-12-26 2019-04-03 株式会社ヨコオ 交換用コンタクトユニット及び検査治具
US10535572B2 (en) * 2016-04-15 2020-01-14 Taiwan Semiconductor Manufacturing Company, Ltd. Device arrangement structure assembly and test method
US10261123B2 (en) * 2017-08-24 2019-04-16 Micron Technology, Inc. Semiconductor device structures for burn-in testing and methods thereof
CN110010511B (zh) * 2018-10-10 2023-11-17 浙江集迈科微电子有限公司 一种射频芯片系统级封装模组的测试方式
TWI753304B (zh) * 2019-03-26 2022-01-21 新加坡商Ｐｅｐ創新私人有限公司 封裝方法及面板組件
CN113161251A (zh) * 2020-01-22 2021-07-23 复格企业股份有限公司 芯片封装的工艺内测试方法及装置
CN111693738A (zh) * 2020-05-13 2020-09-22 中国科学院上海微系统与信息技术研究所 一种多通道高频芯片的低温测试结构
CN111965474B (zh) * 2020-08-18 2022-09-16 安徽美拓照明有限公司 一种节能灯泡生产用成品老化测试设备

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US29608A (en) 1860-08-14 towne
US5148103A (en) * 1990-10-31 1992-09-15 Hughes Aircraft Company Apparatus for testing integrated circuits
US5225037A (en) * 1991-06-04 1993-07-06 Texas Instruments Incorporated Method for fabrication of probe card for testing of semiconductor devices
US5239260A (en) * 1991-06-28 1993-08-24 Digital Equipment Corporation Semiconductor probe and alignment system
US5177439A (en) * 1991-08-30 1993-01-05 U.S. Philips Corporation Probe card for testing unencapsulated semiconductor devices
US5203725A (en) * 1992-03-16 1993-04-20 Molex Incorporated Biased edge card connector
EP0615131A1 (de) * 1993-03-10 1994-09-14 Co-Operative Facility For Aging Tester Development Sonde für Halbleiterscheiben mit integrierten Schaltelementen
US5559446A (en) * 1993-07-19 1996-09-24 Tokyo Electron Kabushiki Kaisha Probing method and device
KR0140034B1 (ko) * 1993-12-16 1998-07-15 모리시다 요이치 반도체 웨이퍼 수납기, 반도체 웨이퍼의 검사용 집적회로 단자와 프로브 단자와의 접속방법 및 그 장치, 반도체 집적회로의 검사방법, 프로브카드 및 그 제조방법
JP3491700B2 (ja) * 1994-03-18 2004-01-26 富士通株式会社 半導体集積回路装置の試験用キャリア
EP0707214A3 (de) * 1994-10-14 1997-04-16 Hughes Aircraft Co Multiport-Membranfühler zum Testen vollständiger Wafer
JP3137322B2 (ja) 1996-07-12 2001-02-19 富士通株式会社 半導体装置の製造方法及び半導体装置製造用金型及び半導体装置
JPH11110061A (ja) 1997-10-07 1999-04-23 Kiyoaki Kobayashi 自己回帰モデルの光学的スペクトル計算方法と装置。

Also Published As

Publication number Publication date
EP1045438A3 (de) 2004-10-06
KR20000067796A (ko) 2000-11-25
TW425649B (en) 2001-03-11
EP2023386A3 (de) 2014-05-14
JP3565086B2 (ja) 2004-09-15
CN1271178A (zh) 2000-10-25
EP1045438A2 (de) 2000-10-18
JP2000306961A (ja) 2000-11-02
CN1192422C (zh) 2005-03-09
EP1045438B1 (de) 2009-01-07
EP2023386A2 (de) 2009-02-11
EP1045438B8 (de) 2009-03-25
US6433563B1 (en) 2002-08-13
KR100564046B1 (ko) 2006-03-29

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Legal Events

Date Code Title Description
8327 Change in the person/name/address of the patent owner

Owner name: FUJITSU MICROELECTRONICS LIMITED, TOKIO, JP

8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: FUJITSU SEMICONDUCTOR LTD., YOKOHAMA, KANAGAWA, JP

8328 Change in the person/name/address of the agent

Representative=s name: SEEGER SEEGER LINDNER PARTNERSCHAFT PATENTANWAELTE