DE60031852D1 - Verfahren und system zur reinigung eines wafers nach chemisch- mechanischem polieren oder plasmabehandlung - Google Patents

Verfahren und system zur reinigung eines wafers nach chemisch- mechanischem polieren oder plasmabehandlung

Info

Publication number
DE60031852D1
DE60031852D1 DE60031852T DE60031852T DE60031852D1 DE 60031852 D1 DE60031852 D1 DE 60031852D1 DE 60031852 T DE60031852 T DE 60031852T DE 60031852 T DE60031852 T DE 60031852T DE 60031852 D1 DE60031852 D1 DE 60031852D1
Authority
DE
Germany
Prior art keywords
cleaning
chemic
water
wafer
plasma treatment
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE60031852T
Other languages
English (en)
Other versions
DE60031852T2 (de
Inventor
J Farber
S Svirchevski
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lam Research Corp
Original Assignee
Lam Research Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Research Corp filed Critical Lam Research Corp
Publication of DE60031852D1 publication Critical patent/DE60031852D1/de
Application granted granted Critical
Publication of DE60031852T2 publication Critical patent/DE60031852T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67046—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly scrubbing means, e.g. brushes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S134/00—Cleaning and liquid contact with solids
    • Y10S134/902—Semiconductor wafer

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
DE60031852T 1999-06-25 2000-06-23 Verfahren und system zur reinigung eines wafers nach chemisch- mechanischem polieren oder plasmabehandlung Expired - Fee Related DE60031852T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US344671 1999-06-25
US09/344,671 US6405399B1 (en) 1999-06-25 1999-06-25 Method and system of cleaning a wafer after chemical mechanical polishing or plasma processing
PCT/US2000/017204 WO2001001458A1 (en) 1999-06-25 2000-06-23 Method and system of cleaning a wafer after chemical mechanical polishing or plasma processing

Publications (2)

Publication Number Publication Date
DE60031852D1 true DE60031852D1 (de) 2006-12-28
DE60031852T2 DE60031852T2 (de) 2007-09-13

Family

ID=23351491

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60031852T Expired - Fee Related DE60031852T2 (de) 1999-06-25 2000-06-23 Verfahren und system zur reinigung eines wafers nach chemisch- mechanischem polieren oder plasmabehandlung

Country Status (8)

Country Link
US (1) US6405399B1 (de)
EP (1) EP1190441B1 (de)
JP (1) JP4667687B2 (de)
KR (1) KR100797421B1 (de)
AT (1) ATE345579T1 (de)
DE (1) DE60031852T2 (de)
TW (1) TW541210B (de)
WO (1) WO2001001458A1 (de)

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JP3185753B2 (ja) * 1998-05-22 2001-07-11 日本電気株式会社 半導体装置の製造方法
WO2001003165A1 (en) * 1999-07-01 2001-01-11 Lam Research Corporation Spin, rinse, and dry station with adjustable nozzle assembly for semiconductor wafer backside rinsing
US6676493B1 (en) * 2001-12-26 2004-01-13 Lam Research Corporation Integrated planarization and clean wafer processing system
KR100500517B1 (ko) * 2002-10-22 2005-07-12 삼성전자주식회사 반도체 웨이퍼용 ｃｍｐ 설비
US6916233B2 (en) * 2002-11-28 2005-07-12 Tsc Corporation Polishing and cleaning compound device
US20050048876A1 (en) * 2003-09-02 2005-03-03 Applied Materials, Inc. Fabricating and cleaning chamber components having textured surfaces
KR101720349B1 (ko) * 2010-02-17 2017-03-27 코닝 인코포레이티드 유체 도포기와 유리 세정 공정
CN103913959B (zh) * 2014-03-27 2017-09-26 京东方科技集团股份有限公司 一种光刻胶的剥离装置及剥离方法
USD800401S1 (en) * 2015-09-24 2017-10-17 Ebara Corporation Roller for substrate cleaning
JP1556809S (de) * 2015-09-24 2016-08-22
US11923208B2 (en) 2017-05-19 2024-03-05 Illinois Tool Works Inc. Methods and apparatuses for chemical delivery for brush conditioning
KR102428927B1 (ko) 2020-01-22 2022-08-04 주식회사 씨티에스 웨이퍼 세정 장치용 웨이퍼 회전 유닛 및 이를 포함하는 씨엠피 장치
CN113889405A (zh) 2020-07-02 2022-01-04 长鑫存储技术有限公司 半导体结构的处理方法及形成方法
KR20220122723A (ko) * 2020-07-02 2022-09-02 창신 메모리 테크놀로지즈 아이엔씨 반도체 구조의 처리 방법 및 형성 방법
CN112371612B (zh) * 2020-10-13 2021-08-24 江苏亚电科技有限公司 一种无篮晶圆清洗方法

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Also Published As

Publication number Publication date
EP1190441A1 (de) 2002-03-27
EP1190441B1 (de) 2006-11-15
ATE345579T1 (de) 2006-12-15
JP2003503845A (ja) 2003-01-28
DE60031852T2 (de) 2007-09-13
US6405399B1 (en) 2002-06-18
WO2001001458A1 (en) 2001-01-04
TW541210B (en) 2003-07-11
KR100797421B1 (ko) 2008-01-23
KR20020027360A (ko) 2002-04-13
JP4667687B2 (ja) 2011-04-13

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee