JPS57114225A - Manufacturing device of semiconductor - Google Patents

Manufacturing device of semiconductor

Info

Publication number
JPS57114225A
JPS57114225A JP48281A JP48281A JPS57114225A JP S57114225 A JPS57114225 A JP S57114225A JP 48281 A JP48281 A JP 48281A JP 48281 A JP48281 A JP 48281A JP S57114225 A JPS57114225 A JP S57114225A
Authority
JP
Japan
Prior art keywords
nozzle
reaction gas
circumferential
supplying direction
nozzles
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP48281A
Other languages
Japanese (ja)
Inventor
Mitsuru Nakano
Mikio Kurashima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP48281A priority Critical patent/JPS57114225A/en
Publication of JPS57114225A publication Critical patent/JPS57114225A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02576—N-type
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02579—P-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)

Abstract

PURPOSE:To reduce unevenness of film thickness and characteristic of SiO2 films, etc., to be formed on wafers of semiconductor device by a method wherein the nozzle parts of circumferential nozzles are formed variably on the nozzle main bodies enabling to change the supplying direction of reaction gas to be supplied. CONSTITUTION:The center nozzle 6 to supply reaction gas, carrier gas is provided at the inside center of an upper cover 1 of a spherical surface type reaction chamber 2 manufactured with a stainless steel, and the circumferential nozzles 8 are provided on the side wall 7. A means to form the nozzle parts of the circumferential nozzles on the main bodies of the circumferential nozzles to be variable is provided. Namely, the nozzle part 10' of the circumferential nozzle 8' is equipped to the nozzle main body 11 swingably to enable to convert the supplying direction of reaction gas within the range theta', or the nozzle part 10' thereof is formed with a flexible member (thin stainless steel, for example), and it is easily deformed manually to enable to convert the supplying direction of reaction gas.
JP48281A 1981-01-07 1981-01-07 Manufacturing device of semiconductor Pending JPS57114225A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP48281A JPS57114225A (en) 1981-01-07 1981-01-07 Manufacturing device of semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP48281A JPS57114225A (en) 1981-01-07 1981-01-07 Manufacturing device of semiconductor

Publications (1)

Publication Number Publication Date
JPS57114225A true JPS57114225A (en) 1982-07-16

Family

ID=11474989

Family Applications (1)

Application Number Title Priority Date Filing Date
JP48281A Pending JPS57114225A (en) 1981-01-07 1981-01-07 Manufacturing device of semiconductor

Country Status (1)

Country Link
JP (1) JPS57114225A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001001458A1 (en) * 1999-06-25 2001-01-04 Lam Research Corporation Method and system of cleaning a wafer after chemical mechanical polishing or plasma processing
JP2009224775A (en) * 2008-02-20 2009-10-01 Tokyo Electron Ltd Gas supply equipment, film-forming apparatus, and film formation method

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001001458A1 (en) * 1999-06-25 2001-01-04 Lam Research Corporation Method and system of cleaning a wafer after chemical mechanical polishing or plasma processing
US6405399B1 (en) 1999-06-25 2002-06-18 Lam Research Corporation Method and system of cleaning a wafer after chemical mechanical polishing or plasma processing
JP2009224775A (en) * 2008-02-20 2009-10-01 Tokyo Electron Ltd Gas supply equipment, film-forming apparatus, and film formation method
US8945306B2 (en) 2008-02-20 2015-02-03 Tokyo Electron Limited Gas supply device

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