JPS5595320A - Cvd device - Google Patents
Cvd deviceInfo
- Publication number
- JPS5595320A JPS5595320A JP317579A JP317579A JPS5595320A JP S5595320 A JPS5595320 A JP S5595320A JP 317579 A JP317579 A JP 317579A JP 317579 A JP317579 A JP 317579A JP S5595320 A JPS5595320 A JP S5595320A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- suscepter
- holder
- fluttering
- flake
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
Abstract
PURPOSE:To obtain a homogeneous and stable film on a wafer by a construction wherein the wafer is loaded on the holder whose diameter is smaller than that of wafer for reducing the effect of fluttering of flake from the suscepter's. CONSTITUTION:A circular holder 12 which is a little smaller in diameter than wafer 12 is furnished on the suscepter 2. Each holder is made of material that has large heat capacity and loaded with wafer or dummy to protect the surface. By this construction of the CVD device, the fluttering flake from suscepter 2 is reduced very much and moreover the good temperature pattern is obtained because of freedom from foreign material at the contact between wafer and holder 12. Futhermore less frequent suscepter cleaning is to be required because of less interference to wafer of suscepter's flakes. By this necessary and simple maintenance, the wafer of high quality and high yield is obtained.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP317579A JPS5595320A (en) | 1979-01-12 | 1979-01-12 | Cvd device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP317579A JPS5595320A (en) | 1979-01-12 | 1979-01-12 | Cvd device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5595320A true JPS5595320A (en) | 1980-07-19 |
Family
ID=11550042
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP317579A Pending JPS5595320A (en) | 1979-01-12 | 1979-01-12 | Cvd device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5595320A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59200434A (en) * | 1983-04-28 | 1984-11-13 | Hitachi Electronics Eng Co Ltd | Detachable mechanism of sample base of cvd device |
US5242501A (en) * | 1982-09-10 | 1993-09-07 | Lam Research Corporation | Susceptor in chemical vapor deposition reactors |
JP2020198420A (en) * | 2019-05-28 | 2020-12-10 | 信越半導体株式会社 | Manufacturing method for epitaxial wafer and susceptor |
-
1979
- 1979-01-12 JP JP317579A patent/JPS5595320A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5242501A (en) * | 1982-09-10 | 1993-09-07 | Lam Research Corporation | Susceptor in chemical vapor deposition reactors |
JPS59200434A (en) * | 1983-04-28 | 1984-11-13 | Hitachi Electronics Eng Co Ltd | Detachable mechanism of sample base of cvd device |
JP2020198420A (en) * | 2019-05-28 | 2020-12-10 | 信越半導体株式会社 | Manufacturing method for epitaxial wafer and susceptor |
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