DE4229837C2 - Verfahren zur Herstellung eines Speicherkondensators für eine Halbleiter-Speicherzelle - Google Patents
Verfahren zur Herstellung eines Speicherkondensators für eine Halbleiter-SpeicherzelleInfo
- Publication number
- DE4229837C2 DE4229837C2 DE4229837A DE4229837A DE4229837C2 DE 4229837 C2 DE4229837 C2 DE 4229837C2 DE 4229837 A DE4229837 A DE 4229837A DE 4229837 A DE4229837 A DE 4229837A DE 4229837 C2 DE4229837 C2 DE 4229837C2
- Authority
- DE
- Germany
- Prior art keywords
- layer
- etching
- polysilicon
- grains
- micro
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000003860 storage Methods 0.000 title claims description 122
- 239000003990 capacitor Substances 0.000 title claims description 66
- 238000004519 manufacturing process Methods 0.000 title claims description 30
- 239000004065 semiconductor Substances 0.000 title claims description 20
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 117
- 229920005591 polysilicon Polymers 0.000 claims description 117
- 238000000034 method Methods 0.000 claims description 80
- 238000005530 etching Methods 0.000 claims description 74
- 238000009413 insulation Methods 0.000 claims description 56
- 238000004518 low pressure chemical vapour deposition Methods 0.000 claims description 8
- 239000011521 glass Substances 0.000 claims description 3
- 230000001590 oxidative effect Effects 0.000 claims 1
- 239000010410 layer Substances 0.000 description 259
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 57
- 239000000758 substrate Substances 0.000 description 40
- 229910052681 coesite Inorganic materials 0.000 description 24
- 229910052906 cristobalite Inorganic materials 0.000 description 24
- 239000000377 silicon dioxide Substances 0.000 description 24
- 235000012239 silicon dioxide Nutrition 0.000 description 24
- 229910052682 stishovite Inorganic materials 0.000 description 24
- 229910052905 tridymite Inorganic materials 0.000 description 24
- CPELXLSAUQHCOX-UHFFFAOYSA-N Hydrogen bromide Chemical compound Br CPELXLSAUQHCOX-UHFFFAOYSA-N 0.000 description 14
- 238000012546 transfer Methods 0.000 description 14
- 229920002120 photoresistant polymer Polymers 0.000 description 13
- 239000002245 particle Substances 0.000 description 10
- 238000001259 photo etching Methods 0.000 description 10
- 239000000126 substance Substances 0.000 description 10
- 239000005380 borophosphosilicate glass Substances 0.000 description 9
- 229910052814 silicon oxide Inorganic materials 0.000 description 9
- 229910052581 Si3N4 Inorganic materials 0.000 description 8
- 239000000243 solution Substances 0.000 description 8
- 229910000042 hydrogen bromide Inorganic materials 0.000 description 7
- 230000003647 oxidation Effects 0.000 description 7
- 238000007254 oxidation reaction Methods 0.000 description 7
- 238000005229 chemical vapour deposition Methods 0.000 description 6
- 239000011241 protective layer Substances 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 239000007789 gas Substances 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 229910052698 phosphorus Inorganic materials 0.000 description 4
- 239000011574 phosphorus Substances 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 239000011229 interlayer Substances 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
- 230000000873 masking effect Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 235000011007 phosphoric acid Nutrition 0.000 description 3
- 125000006850 spacer group Chemical group 0.000 description 3
- 238000001039 wet etching Methods 0.000 description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- HAYXDMNJJFVXCI-UHFFFAOYSA-N arsenic(5+) Chemical compound [As+5] HAYXDMNJJFVXCI-UHFFFAOYSA-N 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000011259 mixed solution Substances 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- -1 phosphorus ions Chemical class 0.000 description 2
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl trichloride Chemical compound ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 description 2
- 238000010992 reflux Methods 0.000 description 2
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 description 2
- 229910019213 POCl3 Inorganic materials 0.000 description 1
- 241000158147 Sator Species 0.000 description 1
- 229910005091 Si3N Inorganic materials 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 210000003608 fece Anatomy 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 230000036039 immunity Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
- H01L28/82—Electrodes with an enlarged surface, e.g. formed by texturisation
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/03—Making the capacitor or connections thereto
- H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
- H10B12/318—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor the storage electrode having multiple segments
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
- H01L28/82—Electrodes with an enlarged surface, e.g. formed by texturisation
- H01L28/84—Electrodes with an enlarged surface, e.g. formed by texturisation being a rough surface, e.g. using hemispherical grains
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
- H01L28/82—Electrodes with an enlarged surface, e.g. formed by texturisation
- H01L28/86—Electrodes with an enlarged surface, e.g. formed by texturisation having horizontal extensions
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR910015626 | 1991-09-07 | ||
| KR920005409 | 1992-03-31 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE4229837A1 DE4229837A1 (de) | 1993-03-11 |
| DE4229837C2 true DE4229837C2 (de) | 1996-07-11 |
Family
ID=26628732
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE4229837A Expired - Fee Related DE4229837C2 (de) | 1991-09-07 | 1992-09-07 | Verfahren zur Herstellung eines Speicherkondensators für eine Halbleiter-Speicherzelle |
Country Status (6)
| Country | Link |
|---|---|
| JP (1) | JP2690434B2 (ja) |
| DE (1) | DE4229837C2 (ja) |
| FR (1) | FR2681178A1 (ja) |
| GB (1) | GB2259406B (ja) |
| IT (1) | IT1256130B (ja) |
| TW (1) | TW222710B (ja) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR960002097B1 (ko) * | 1992-02-28 | 1996-02-10 | 삼성전자주식회사 | 반도체장치의 커패시터 제조방법 |
| US5254503A (en) * | 1992-06-02 | 1993-10-19 | International Business Machines Corporation | Process of making and using micro mask |
| JPH0774268A (ja) * | 1993-07-07 | 1995-03-17 | Mitsubishi Electric Corp | 半導体記憶装置およびその製造方法 |
| US5383088A (en) * | 1993-08-09 | 1995-01-17 | International Business Machines Corporation | Storage capacitor with a conducting oxide electrode for metal-oxide dielectrics |
| US5512768A (en) * | 1994-03-18 | 1996-04-30 | United Microelectronics Corporation | Capacitor for use in DRAM cell using surface oxidized silicon nodules |
| US5869368A (en) * | 1997-09-22 | 1999-02-09 | Yew; Tri-Rung | Method to increase capacitance |
| KR100675275B1 (ko) | 2004-12-16 | 2007-01-26 | 삼성전자주식회사 | 반도체 장치 및 이 장치의 패드 배치방법 |
| TWI295822B (en) | 2006-03-29 | 2008-04-11 | Advanced Semiconductor Eng | Method for forming a passivation layer |
| FR2988712B1 (fr) | 2012-04-02 | 2014-04-11 | St Microelectronics Rousset | Circuit integre equipe d'un dispositif de detection de son orientation spatiale et/ou d'un changement de cette orientation. |
| FR2998417A1 (fr) * | 2012-11-16 | 2014-05-23 | St Microelectronics Rousset | Procede de realisation d'un element pointu de circuit integre, et circuit integre correspondant |
| US11825645B2 (en) | 2020-06-04 | 2023-11-21 | Etron Technology, Inc. | Memory cell structure |
| JP7339319B2 (ja) * | 2021-12-03 | 2023-09-05 | ▲ゆ▼創科技股▲ふん▼有限公司 | メモリセル構造 |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63240057A (ja) * | 1987-03-27 | 1988-10-05 | Fujitsu Ltd | スタツク型キヤパシタ |
| JPH01282855A (ja) * | 1988-05-09 | 1989-11-14 | Mitsubishi Electric Corp | 半導体基板上にキャパシタを形成する方法 |
| JPH03165552A (ja) * | 1989-11-24 | 1991-07-17 | Sony Corp | スタックトキャパシタ型ｄｒａｍとその製造方法 |
| JPH03166730A (ja) * | 1989-11-27 | 1991-07-18 | Seiko Instr Inc | 半導体装置の製造方法 |
| DD299990A5 (de) * | 1990-02-23 | 1992-05-14 | Dresden Forschzentr Mikroelek | Ein-Transistor-Speicherzellenanordnung und Verfahren zu deren Herstellung |
| US5049517A (en) * | 1990-11-07 | 1991-09-17 | Micron Technology, Inc. | Method for formation of a stacked capacitor |
| US5037773A (en) * | 1990-11-08 | 1991-08-06 | Micron Technology, Inc. | Stacked capacitor doping technique making use of rugged polysilicon |
| KR930009583B1 (ko) * | 1990-11-29 | 1993-10-07 | 삼성전자 주식회사 | 융모모양의 커패시터구조를 가진 반도체 메모리장치의 제조방법 |
| JPH04207066A (ja) * | 1990-11-30 | 1992-07-29 | Matsushita Electric Ind Co Ltd | 半導体装置の製造方法 |
| KR930009593B1 (ko) * | 1991-01-30 | 1993-10-07 | 삼성전자 주식회사 | 고집적 반도체 메모리장치 및 그 제조방법(HCC Cell) |
| KR940005288B1 (ko) * | 1991-07-11 | 1994-06-15 | 금성일렉트론 주식회사 | 반도체 장치의 제조방법 |
-
1992
- 1992-09-02 TW TW081106957A patent/TW222710B/zh active
- 1992-09-04 IT ITMI922067A patent/IT1256130B/it active IP Right Grant
- 1992-09-07 JP JP4265348A patent/JP2690434B2/ja not_active Expired - Fee Related
- 1992-09-07 FR FR9210645A patent/FR2681178A1/fr active Granted
- 1992-09-07 DE DE4229837A patent/DE4229837C2/de not_active Expired - Fee Related
- 1992-09-07 GB GB9218898A patent/GB2259406B/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP2690434B2 (ja) | 1997-12-10 |
| FR2681178A1 (fr) | 1993-03-12 |
| ITMI922067A1 (it) | 1994-03-04 |
| DE4229837A1 (de) | 1993-03-11 |
| GB2259406A (en) | 1993-03-10 |
| FR2681178B1 (ja) | 1997-02-07 |
| GB2259406B (en) | 1996-05-01 |
| GB9218898D0 (en) | 1992-10-21 |
| JPH05198745A (ja) | 1993-08-06 |
| TW222710B (ja) | 1994-04-21 |
| ITMI922067A0 (it) | 1992-09-04 |
| IT1256130B (it) | 1995-11-29 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OP8 | Request for examination as to paragraph 44 patent law | ||
| D2 | Grant after examination | ||
| 8364 | No opposition during term of opposition | ||
| 8339 | Ceased/non-payment of the annual fee |