IT1256130B - Dispositivo di memoria a semiconduttore con un elettrodo di immagazzinamento avente una molteplicita' di microsolchi e/o una molteplicita' di microcilindri - Google Patents

Dispositivo di memoria a semiconduttore con un elettrodo di immagazzinamento avente una molteplicita' di microsolchi e/o una molteplicita' di microcilindri

Info

Publication number
IT1256130B
IT1256130B ITMI922067A ITMI922067A IT1256130B IT 1256130 B IT1256130 B IT 1256130B IT MI922067 A ITMI922067 A IT MI922067A IT MI922067 A ITMI922067 A IT MI922067A IT 1256130 B IT1256130 B IT 1256130B
Authority
IT
Italy
Prior art keywords
multiplicity
storage electrode
microcylinders
microsolks
memory device
Prior art date
Application number
ITMI922067A
Other languages
English (en)
Italian (it)
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of ITMI922067A0 publication Critical patent/ITMI922067A0/it
Publication of ITMI922067A1 publication Critical patent/ITMI922067A1/it
Application granted granted Critical
Publication of IT1256130B publication Critical patent/IT1256130B/it

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/60—Electrodes
    • H01L28/82—Electrodes with an enlarged surface, e.g. formed by texturisation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
    • H10B12/318—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor the storage electrode having multiple segments
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/60—Electrodes
    • H01L28/82—Electrodes with an enlarged surface, e.g. formed by texturisation
    • H01L28/84—Electrodes with an enlarged surface, e.g. formed by texturisation being a rough surface, e.g. using hemispherical grains
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/60—Electrodes
    • H01L28/82—Electrodes with an enlarged surface, e.g. formed by texturisation
    • H01L28/86—Electrodes with an enlarged surface, e.g. formed by texturisation having horizontal extensions

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
ITMI922067A 1991-09-07 1992-09-04 Dispositivo di memoria a semiconduttore con un elettrodo di immagazzinamento avente una molteplicita' di microsolchi e/o una molteplicita' di microcilindri IT1256130B (it)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR910015626 1991-09-07
KR920005409 1992-03-31

Publications (3)

Publication Number Publication Date
ITMI922067A0 ITMI922067A0 (it) 1992-09-04
ITMI922067A1 ITMI922067A1 (it) 1994-03-04
IT1256130B true IT1256130B (it) 1995-11-29

Family

ID=26628732

Family Applications (1)

Application Number Title Priority Date Filing Date
ITMI922067A IT1256130B (it) 1991-09-07 1992-09-04 Dispositivo di memoria a semiconduttore con un elettrodo di immagazzinamento avente una molteplicita' di microsolchi e/o una molteplicita' di microcilindri

Country Status (6)

Country Link
JP (1) JP2690434B2 (ja)
DE (1) DE4229837C2 (ja)
FR (1) FR2681178A1 (ja)
GB (1) GB2259406B (ja)
IT (1) IT1256130B (ja)
TW (1) TW222710B (ja)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR960002097B1 (ko) * 1992-02-28 1996-02-10 삼성전자주식회사 반도체장치의 커패시터 제조방법
US5254503A (en) * 1992-06-02 1993-10-19 International Business Machines Corporation Process of making and using micro mask
JPH0774268A (ja) * 1993-07-07 1995-03-17 Mitsubishi Electric Corp 半導体記憶装置およびその製造方法
US5383088A (en) * 1993-08-09 1995-01-17 International Business Machines Corporation Storage capacitor with a conducting oxide electrode for metal-oxide dielectrics
US5512768A (en) * 1994-03-18 1996-04-30 United Microelectronics Corporation Capacitor for use in DRAM cell using surface oxidized silicon nodules
US5869368A (en) * 1997-09-22 1999-02-09 Yew; Tri-Rung Method to increase capacitance
KR100675275B1 (ko) 2004-12-16 2007-01-26 삼성전자주식회사 반도체 장치 및 이 장치의 패드 배치방법
TWI295822B (en) 2006-03-29 2008-04-11 Advanced Semiconductor Eng Method for forming a passivation layer
FR2988712B1 (fr) 2012-04-02 2014-04-11 St Microelectronics Rousset Circuit integre equipe d'un dispositif de detection de son orientation spatiale et/ou d'un changement de cette orientation.
FR2998417A1 (fr) * 2012-11-16 2014-05-23 St Microelectronics Rousset Procede de realisation d'un element pointu de circuit integre, et circuit integre correspondant
US11825645B2 (en) 2020-06-04 2023-11-21 Etron Technology, Inc. Memory cell structure
JP7339319B2 (ja) * 2021-12-03 2023-09-05 ▲ゆ▼創科技股▲ふん▼有限公司 メモリセル構造

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63240057A (ja) * 1987-03-27 1988-10-05 Fujitsu Ltd スタツク型キヤパシタ
JPH01282855A (ja) * 1988-05-09 1989-11-14 Mitsubishi Electric Corp 半導体基板上にキャパシタを形成する方法
JPH03165552A (ja) * 1989-11-24 1991-07-17 Sony Corp スタックトキャパシタ型ｄｒａｍとその製造方法
JPH03166730A (ja) * 1989-11-27 1991-07-18 Seiko Instr Inc 半導体装置の製造方法
DD299990A5 (de) * 1990-02-23 1992-05-14 Dresden Forschzentr Mikroelek Ein-Transistor-Speicherzellenanordnung und Verfahren zu deren Herstellung
US5049517A (en) * 1990-11-07 1991-09-17 Micron Technology, Inc. Method for formation of a stacked capacitor
US5037773A (en) * 1990-11-08 1991-08-06 Micron Technology, Inc. Stacked capacitor doping technique making use of rugged polysilicon
KR930009583B1 (ko) * 1990-11-29 1993-10-07 삼성전자 주식회사 융모모양의 커패시터구조를 가진 반도체 메모리장치의 제조방법
JPH04207066A (ja) * 1990-11-30 1992-07-29 Matsushita Electric Ind Co Ltd 半導体装置の製造方法
KR930009593B1 (ko) * 1991-01-30 1993-10-07 삼성전자 주식회사 고집적 반도체 메모리장치 및 그 제조방법(HCC Cell)
KR940005288B1 (ko) * 1991-07-11 1994-06-15 금성일렉트론 주식회사 반도체 장치의 제조방법

Also Published As

Publication number Publication date
JP2690434B2 (ja) 1997-12-10
FR2681178A1 (fr) 1993-03-12
ITMI922067A1 (it) 1994-03-04
DE4229837A1 (de) 1993-03-11
GB2259406A (en) 1993-03-10
FR2681178B1 (ja) 1997-02-07
GB2259406B (en) 1996-05-01
GB9218898D0 (en) 1992-10-21
JPH05198745A (ja) 1993-08-06
TW222710B (ja) 1994-04-21
DE4229837C2 (de) 1996-07-11
ITMI922067A0 (it) 1992-09-04

Similar Documents

Publication Publication Date Title
IT1256130B (it) Dispositivo di memoria a semiconduttore con un elettrodo di immagazzinamento avente una molteplicita' di microsolchi e/o una molteplicita' di microcilindri
EP1271652A3 (en) A semiconductor memory and its production process
KR850002680A (ko) 반도체 메모리와 그 제조방법
KR950021597A (ko) 반도체 장치의 커패시터 제조방법
KR910010722A (ko) 반도체기억장치
TW337025B (en) Semiconductor device and its manufacturing method
KR920015464A (ko) 반도체 장치의 전극배선층 및 그 제조방법
KR960014727B1 (en) Method of making a memory capacitor in semiconductor device
KR930015006A (ko) 디램의 커패시터 제조방법
KR960008576B1 (en) Pin type storage capacitor
KR960004086B1 (en) Forming method of self aligned contact for semiconductor device
KR930015007A (ko) 디램 셀 제조방법
KR970003954A (ko) 반도체 소자의 캐패시터 제조방법
KR0122519B1 (en) Manufacturing method of capacitor of semiconductor device
KR930018719A (ko) 디램셀의 캐패시터 제조방법
KR970011665B1 (en) Method of capacitor fabrication in semiconductor
KR940004815A (ko) 반도체장치 및 그의 제조방법
KR930003390A (ko) 살리사이드를 이용한 디램 제조 방법
KR930018721A (ko) 디램 셀의 캐패시터 저장전극 제조방법
KR930006926A (ko) 반도체 메모리 소자의 캐피시터 제조방법
KR910008788A (ko) 커패시터 스토리지 노드의 자동 정렬 접촉방법
KR960039333A (ko) 반도체 소자의 캐패시터 형성방법
KR960032746A (ko) 비트라인 상부에 형성된 커패시터를 갖는 반도체 메모리장치
KR950024351A (ko) Eprom반도체 장치 및 이의 형성방법
KR950025981A (ko) 디램 (dram) 제조 방법

Legal Events

Date Code Title Description
0001 Granted
TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19970926