KR960004086B1 - Forming method of self aligned contact for semiconductor device - Google Patents

Forming method of self aligned contact for semiconductor device Download PDF

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Publication number
KR960004086B1
KR960004086B1 KR920026717A KR920026717A KR960004086B1 KR 960004086 B1 KR960004086 B1 KR 960004086B1 KR 920026717 A KR920026717 A KR 920026717A KR 920026717 A KR920026717 A KR 920026717A KR 960004086 B1 KR960004086 B1 KR 960004086B1
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KR
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Grant
Patent type
Prior art keywords
film
contact
oxide
nitride
etching
Prior art date
Application number
KR920026717A
Other versions
KR940016879A (en )
Inventor
Hae-Sung Park
Original Assignee
Hyundai Electronics Ind
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Abstract

forming a contact mask by storing a first nitride film, oxide film and polysilicon film after forming a gate electrode on a silicon substrate; storing the second nitride film on top of that after eliminating the mask by leaving the topology part of the oxide film where the contact hole between the gate electrode is formed when etching the polysilicon film and oxide film using the contact mask; eliminating the left oxide film of topology part by wet etching after leaving the second nitride film on the side of oxide film by blanket etching; and forming a contact hole by eliminating the second nitride film and the first nitride film by the wet etching.
KR920026717A 1992-12-30 1992-12-30 Forming method of self aligned contact for semiconductor device KR960004086B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR920026717A KR960004086B1 (en) 1992-12-30 1992-12-30 Forming method of self aligned contact for semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR920026717A KR960004086B1 (en) 1992-12-30 1992-12-30 Forming method of self aligned contact for semiconductor device

Publications (2)

Publication Number Publication Date
KR940016879A true KR940016879A (en) 1994-07-25
KR960004086B1 true KR960004086B1 (en) 1996-03-26

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR920026717A KR960004086B1 (en) 1992-12-30 1992-12-30 Forming method of self aligned contact for semiconductor device

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KR (1) KR960004086B1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3535615B2 (en) 1995-07-18 2004-06-07 株式会社ルネサステクノロジ The semiconductor integrated circuit device

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