KR0122519B1 - Manufacturing method of capacitor of semiconductor device - Google Patents

Manufacturing method of capacitor of semiconductor device

Info

Publication number
KR0122519B1
KR0122519B1 KR93031922A KR930031922A KR0122519B1 KR 0122519 B1 KR0122519 B1 KR 0122519B1 KR 93031922 A KR93031922 A KR 93031922A KR 930031922 A KR930031922 A KR 930031922A KR 0122519 B1 KR0122519 B1 KR 0122519B1
Authority
KR
South Korea
Prior art keywords
bit line
etching
polysilicon film
mask
exposed
Prior art date
Application number
KR93031922A
Other languages
Korean (ko)
Other versions
KR950021595A (en
Inventor
Sang-Hoon Park
Original Assignee
Hyundai Electronics Ind
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hyundai Electronics Ind filed Critical Hyundai Electronics Ind
Priority to KR93031922A priority Critical patent/KR0122519B1/en
Priority to US08/365,344 priority patent/US5536671A/en
Priority to JP6327619A priority patent/JP2620529B2/en
Publication of KR950021595A publication Critical patent/KR950021595A/en
Application granted granted Critical
Publication of KR0122519B1 publication Critical patent/KR0122519B1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

The method forms the bit line contact hole whose drain(5') is exposed by the etching process using a bit line contact mask, the first polysilicon film(10) is deposited and a bit line mask(20) is formed as a photoresist film on the upper part of it. After a pattern is formed as a T-shaped bit line(10') by etching, the exposed first polysilicon film(10), a bit line mask(20) is removed and a planing oxide film(9) is removed by wet etching. And a silicide(11) is formed on the jutted out surface of a T-shaped bit line(10'). After an oxide film is formed on the total structure and a contact hole whose source is exposed is formed by the etching process using a storage electrode contact mask, the second polysilicon film is deposited on the upper part of the total structure, a storage electrode is formed by etching the second polysilicon film so that adjacent storage electrodes are separated at the center area of a bit line.
KR93031922A 1993-12-28 1993-12-31 Manufacturing method of capacitor of semiconductor device KR0122519B1 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
KR93031922A KR0122519B1 (en) 1993-12-31 1993-12-31 Manufacturing method of capacitor of semiconductor device
US08/365,344 US5536671A (en) 1993-12-28 1994-12-28 Method for fabricating capacitor of a semiconductor device
JP6327619A JP2620529B2 (en) 1993-12-28 1994-12-28 Manufacturing method of Dealam capacitor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR93031922A KR0122519B1 (en) 1993-12-31 1993-12-31 Manufacturing method of capacitor of semiconductor device

Publications (2)

Publication Number Publication Date
KR950021595A KR950021595A (en) 1995-07-26
KR0122519B1 true KR0122519B1 (en) 1997-11-12

Family

ID=19374845

Family Applications (1)

Application Number Title Priority Date Filing Date
KR93031922A KR0122519B1 (en) 1993-12-28 1993-12-31 Manufacturing method of capacitor of semiconductor device

Country Status (1)

Country Link
KR (1) KR0122519B1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108281384A (en) * 2014-03-21 2018-07-13 意法半导体(鲁塞)公司 Integrated morphology including adjacent transistors

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108281384A (en) * 2014-03-21 2018-07-13 意法半导体(鲁塞)公司 Integrated morphology including adjacent transistors
CN108281384B (en) * 2014-03-21 2022-12-20 意法半导体(鲁塞)公司 Integrated structure including adjacent transistors

Also Published As

Publication number Publication date
KR950021595A (en) 1995-07-26

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Legal Events

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