IT1256130B - SEMICONDUCTOR MEMORY DEVICE WITH A STORAGE ELECTRODE HAVING A MULTIPLICITY OF MICROSOLKS AND / OR A MULTIPLICITY OF MICROCYLINDERS - Google Patents

SEMICONDUCTOR MEMORY DEVICE WITH A STORAGE ELECTRODE HAVING A MULTIPLICITY OF MICROSOLKS AND / OR A MULTIPLICITY OF MICROCYLINDERS

Info

Publication number
IT1256130B
IT1256130B ITMI922067A ITMI922067A IT1256130B IT 1256130 B IT1256130 B IT 1256130B IT MI922067 A ITMI922067 A IT MI922067A IT MI922067 A ITMI922067 A IT MI922067A IT 1256130 B IT1256130 B IT 1256130B
Authority
IT
Italy
Prior art keywords
multiplicity
storage electrode
microcylinders
microsolks
memory device
Prior art date
Application number
ITMI922067A
Other languages
Italian (it)
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of ITMI922067A0 publication Critical patent/ITMI922067A0/en
Publication of ITMI922067A1 publication Critical patent/ITMI922067A1/en
Application granted granted Critical
Publication of IT1256130B publication Critical patent/IT1256130B/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/60—Electrodes
    • H01L28/82—Electrodes with an enlarged surface, e.g. formed by texturisation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
    • H10B12/318—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor the storage electrode having multiple segments
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/60—Electrodes
    • H01L28/82—Electrodes with an enlarged surface, e.g. formed by texturisation
    • H01L28/84—Electrodes with an enlarged surface, e.g. formed by texturisation being a rough surface, e.g. using hemispherical grains
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/60—Electrodes
    • H01L28/82—Electrodes with an enlarged surface, e.g. formed by texturisation
    • H01L28/86—Electrodes with an enlarged surface, e.g. formed by texturisation having horizontal extensions

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

Un condensatore di immagazzinamento ha un elettrodo di immagazzinamento ed uno strato dielettrico formato sull'elettrodo di immagazzinamento, in cui l'elettrodo di immagazzinamento è di polisilicio e include una pluralità di microsolchi, e/o microcilindri formati sulla sua superficie. Inoltre, l'elettrodo di immagazzinamento con la pluralità di microsolchi e/o microcilindri è formato formando granelli su una superficie dell'elettrodo di immagazzinamento, formando uno strato di maschera di incisione su pareti laterali dei granelli rispettivi, e attuando una incisione anisotropa impiegando uno strato di mascheratura di incisione come una maschera.A storage capacitor has a storage electrode and a dielectric layer formed on the storage electrode, wherein the storage electrode is of polysilicon and includes a plurality of micro-grooves, and / or microcylinders formed on its surface. Furthermore, the storage electrode with the plurality of micro-grooves and / or microcylinders is formed by forming grains on a surface of the storage electrode, forming an etching mask layer on the side walls of the respective grains, and making an anisotropic incision using one incision masking layer as a mask.

ITMI922067A 1991-09-07 1992-09-04 SEMICONDUCTOR MEMORY DEVICE WITH A STORAGE ELECTRODE HAVING A MULTIPLICITY OF MICROSOLKS AND / OR A MULTIPLICITY OF MICROCYLINDERS IT1256130B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR910015626 1991-09-07
KR920005409 1992-03-31

Publications (3)

Publication Number Publication Date
ITMI922067A0 ITMI922067A0 (en) 1992-09-04
ITMI922067A1 ITMI922067A1 (en) 1994-03-04
IT1256130B true IT1256130B (en) 1995-11-29

Family

ID=26628732

Family Applications (1)

Application Number Title Priority Date Filing Date
ITMI922067A IT1256130B (en) 1991-09-07 1992-09-04 SEMICONDUCTOR MEMORY DEVICE WITH A STORAGE ELECTRODE HAVING A MULTIPLICITY OF MICROSOLKS AND / OR A MULTIPLICITY OF MICROCYLINDERS

Country Status (6)

Country Link
JP (1) JP2690434B2 (en)
DE (1) DE4229837C2 (en)
FR (1) FR2681178A1 (en)
GB (1) GB2259406B (en)
IT (1) IT1256130B (en)
TW (1) TW222710B (en)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR960002097B1 (en) * 1992-02-28 1996-02-10 삼성전자주식회사 Method of making a capacitor for a semiconductor device
US5254503A (en) * 1992-06-02 1993-10-19 International Business Machines Corporation Process of making and using micro mask
JPH0774268A (en) * 1993-07-07 1995-03-17 Mitsubishi Electric Corp Semiconductor memory and fabrication thereof
US5383088A (en) * 1993-08-09 1995-01-17 International Business Machines Corporation Storage capacitor with a conducting oxide electrode for metal-oxide dielectrics
US5512768A (en) * 1994-03-18 1996-04-30 United Microelectronics Corporation Capacitor for use in DRAM cell using surface oxidized silicon nodules
US5869368A (en) * 1997-09-22 1999-02-09 Yew; Tri-Rung Method to increase capacitance
KR100675275B1 (en) 2004-12-16 2007-01-26 삼성전자주식회사 Semiconductor device and pad arrangement method thereof
TWI295822B (en) 2006-03-29 2008-04-11 Advanced Semiconductor Eng Method for forming a passivation layer
FR2988712B1 (en) 2012-04-02 2014-04-11 St Microelectronics Rousset INTEGRATED CIRCUIT EQUIPPED WITH A DEVICE FOR DETECTING ITS SPACE ORIENTATION AND / OR CHANGE OF THIS ORIENTATION.
FR2998417A1 (en) * 2012-11-16 2014-05-23 St Microelectronics Rousset METHOD FOR PRODUCING AN INTEGRATED CIRCUIT POINT ELEMENT, AND CORRESPONDING INTEGRATED CIRCUIT
US11825645B2 (en) 2020-06-04 2023-11-21 Etron Technology, Inc. Memory cell structure
JP7339319B2 (en) * 2021-12-03 2023-09-05 ▲ゆ▼創科技股▲ふん▼有限公司 memory cell structure

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63240057A (en) * 1987-03-27 1988-10-05 Fujitsu Ltd Stack type capacitor
JPH01282855A (en) * 1988-05-09 1989-11-14 Mitsubishi Electric Corp Forming capacitor on semiconductor substrate
JPH03165552A (en) * 1989-11-24 1991-07-17 Sony Corp Stacked capacitor type dram and manufacture thereof
JPH03166730A (en) * 1989-11-27 1991-07-18 Seiko Instr Inc Manufacture of semiconductor device
DD299990A5 (en) * 1990-02-23 1992-05-14 Dresden Forschzentr Mikroelek One-transistor memory cell arrangement and method for its production
US5049517A (en) * 1990-11-07 1991-09-17 Micron Technology, Inc. Method for formation of a stacked capacitor
US5037773A (en) * 1990-11-08 1991-08-06 Micron Technology, Inc. Stacked capacitor doping technique making use of rugged polysilicon
KR930009583B1 (en) * 1990-11-29 1993-10-07 삼성전자 주식회사 Method for manufacturing a semiconductor device with villus-type capacitor
JPH04207066A (en) * 1990-11-30 1992-07-29 Matsushita Electric Ind Co Ltd Manufacture of semiconductor device
KR930009593B1 (en) * 1991-01-30 1993-10-07 삼성전자 주식회사 Lsi semiconductor memory device and manufacturing method thereof
KR940005288B1 (en) * 1991-07-11 1994-06-15 금성일렉트론 주식회사 Manufacturing method of semiconductor device

Also Published As

Publication number Publication date
GB9218898D0 (en) 1992-10-21
DE4229837C2 (en) 1996-07-11
DE4229837A1 (en) 1993-03-11
FR2681178A1 (en) 1993-03-12
GB2259406B (en) 1996-05-01
ITMI922067A0 (en) 1992-09-04
TW222710B (en) 1994-04-21
GB2259406A (en) 1993-03-10
JPH05198745A (en) 1993-08-06
FR2681178B1 (en) 1997-02-07
JP2690434B2 (en) 1997-12-10
ITMI922067A1 (en) 1994-03-04

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Legal Events

Date Code Title Description
0001 Granted
TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19970926