JPH03165552A - Stacked capacitor type dram and manufacture thereof - Google Patents

Stacked capacitor type dram and manufacture thereof

Info

Publication number
JPH03165552A
JPH03165552A JP1305853A JP30585389A JPH03165552A JP H03165552 A JPH03165552 A JP H03165552A JP 1305853 A JP1305853 A JP 1305853A JP 30585389 A JP30585389 A JP 30585389A JP H03165552 A JPH03165552 A JP H03165552A
Authority
JP
Japan
Prior art keywords
formed
storage node
polycrystalline silicon
film
node electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1305853A
Inventor
Hideaki Kuroda
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP1305853A priority Critical patent/JPH03165552A/en
Publication of JPH03165552A publication Critical patent/JPH03165552A/en
Application status is Pending legal-status Critical

Links

Abstract

PURPOSE: To improve a stacked capacitor in electrostatic capacity without making a cell large in size by a method wherein a storage node electrode of silicon is formed on an interlaminar insulating film of multilayered structure which contains an etching stopper layer, a side wall of silicon is formed on the side face of the storage node electrode.
CONSTITUTION: A field insulating film 2 is formed on a P-type semiconductor substrate 1, a gate insulating film is formed on the surface of the element forming region of the substrate 1, a polycrystalline silicon film 4 and a high melting point metal silicide film 5 are formed to serve as a gate electrode respectively, a side wall 6 is formed on the side walls of gate electrodes 4 and 5, and diffusion layers 7 and 8 are formed. Then, interlaminar insulating layers 9, 10, and 11 of three-layered structure are selectively etched to form a contact hole 12, and a second polycrystalline silicon layer 14 and an SiO2 film 20 are formed. These are selectively etched so as to make the polycrystalline silicon layer 14 serve as a storage node electrode. In succession, a polycrystalline silicon layer 15 is formed and left unremoved only on the side face of the storage node electrode as the side wall of it so as to enhance it in electrostatic capacity.
COPYRIGHT: (C)1991,JPO&Japio
JP1305853A 1989-11-24 1989-11-24 Stacked capacitor type dram and manufacture thereof Pending JPH03165552A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1305853A JPH03165552A (en) 1989-11-24 1989-11-24 Stacked capacitor type dram and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1305853A JPH03165552A (en) 1989-11-24 1989-11-24 Stacked capacitor type dram and manufacture thereof

Publications (1)

Publication Number Publication Date
JPH03165552A true JPH03165552A (en) 1991-07-17

Family

ID=17950151

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1305853A Pending JPH03165552A (en) 1989-11-24 1989-11-24 Stacked capacitor type dram and manufacture thereof

Country Status (1)

Country Link
JP (1) JPH03165552A (en)

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05198745A (en) * 1991-09-07 1993-08-06 Samsung Electron Co Ltd Capacitor of semiconductor memory device and its manufacturing method
EP0567748A1 (en) * 1992-04-10 1993-11-03 International Business Machines Corporation Fabrication and applications of rough silicon surfaces
EP0572943A1 (en) * 1992-06-02 1993-12-08 International Business Machines Corporation High resolution etching mask
JPH06204403A (en) * 1992-10-24 1994-07-22 Hyundai Electron Ind Co Ltd Manufacture of capacitor maximized in surface area
JPH0745788A (en) * 1993-07-27 1995-02-14 Nec Corp Manufacture of semiconductor device
EP0767363A3 (en) * 1990-10-12 1997-07-02 Kazuhiro Okada A method of manufacturing a physical quantity detector utilizing changes in electrostatic capacitance
US5712812A (en) * 1995-08-11 1998-01-27 Nec Corporation Semiconductor memory device with stacked capacitor structure
NL1007477C2 (en) * 1997-09-22 1999-05-10 United Microelectronics Corp A method for increasing capacity.
US6048764A (en) * 1996-02-13 2000-04-11 Nec Corporation Method for producing semiconductor device with capacitor stacked
US6282956B1 (en) 1994-12-29 2001-09-04 Kazuhiro Okada Multi-axial angular velocity sensor
US6314823B1 (en) 1991-09-20 2001-11-13 Kazuhiro Okada Force detector and acceleration detector and method of manufacturing the same
FR2862946A1 (en) 2003-11-28 2005-06-03 Cebal Sas Supple tube for holding/dispensing product has readable electronic component embedded in plastic material of shoulder during molding process
FR2862947A1 (en) 2003-11-28 2005-06-03 Cebal Sas Supple tube for holding/dispensing product has electronic component embedded in shoulder to exchange information with external reader

Cited By (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5811693A (en) * 1990-10-12 1998-09-22 Okada; Kazuhiro Force detector and acceleration detector and method of manufacturing the same
US6779408B2 (en) 1990-10-12 2004-08-24 Kazuhiro Okada Force detector
US6716253B2 (en) 1990-10-12 2004-04-06 Kazuhiro Okada Force detector
US6477903B2 (en) 1990-10-12 2002-11-12 Kazuhiro Okada Force detector and acceleration detector and method of manufacturing the same
US6158291A (en) * 1990-10-12 2000-12-12 Okada; Kazuhiro Force detector and acceleration detector
EP0767363A3 (en) * 1990-10-12 1997-07-02 Kazuhiro Okada A method of manufacturing a physical quantity detector utilizing changes in electrostatic capacitance
US6053057A (en) * 1990-10-12 2000-04-25 Okada; Kazuhiro Force detector
US7533582B2 (en) 1990-10-12 2009-05-19 Kazuhiro Okada Force detector and acceleration detector and method of manufacturing the same
JPH05198745A (en) * 1991-09-07 1993-08-06 Samsung Electron Co Ltd Capacitor of semiconductor memory device and its manufacturing method
US6314823B1 (en) 1991-09-20 2001-11-13 Kazuhiro Okada Force detector and acceleration detector and method of manufacturing the same
EP0567748A1 (en) * 1992-04-10 1993-11-03 International Business Machines Corporation Fabrication and applications of rough silicon surfaces
EP0572943A1 (en) * 1992-06-02 1993-12-08 International Business Machines Corporation High resolution etching mask
JPH06204403A (en) * 1992-10-24 1994-07-22 Hyundai Electron Ind Co Ltd Manufacture of capacitor maximized in surface area
JPH0745788A (en) * 1993-07-27 1995-02-14 Nec Corp Manufacture of semiconductor device
US6282956B1 (en) 1994-12-29 2001-09-04 Kazuhiro Okada Multi-axial angular velocity sensor
US6865943B2 (en) 1994-12-29 2005-03-15 Kazuhiro Okada Angular velocity sensor
US5712812A (en) * 1995-08-11 1998-01-27 Nec Corporation Semiconductor memory device with stacked capacitor structure
US6048764A (en) * 1996-02-13 2000-04-11 Nec Corporation Method for producing semiconductor device with capacitor stacked
FR2770930A1 (en) * 1997-09-22 1999-05-14 United Microelectronics Corp High capacitance charge storage capacitor for a DRAM
NL1007477C2 (en) * 1997-09-22 1999-05-10 United Microelectronics Corp A method for increasing capacity.
FR2862946A1 (en) 2003-11-28 2005-06-03 Cebal Sas Supple tube for holding/dispensing product has readable electronic component embedded in plastic material of shoulder during molding process
FR2862947A1 (en) 2003-11-28 2005-06-03 Cebal Sas Supple tube for holding/dispensing product has electronic component embedded in shoulder to exchange information with external reader

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