JPH03230561A - Semiconductor device and manufacture thereof - Google Patents

Semiconductor device and manufacture thereof

Info

Publication number
JPH03230561A
JPH03230561A JP2660490A JP2660490A JPH03230561A JP H03230561 A JPH03230561 A JP H03230561A JP 2660490 A JP2660490 A JP 2660490A JP 2660490 A JP2660490 A JP 2660490A JP H03230561 A JPH03230561 A JP H03230561A
Authority
JP
Grant status
Application
Patent type
Prior art keywords
film
protrusions
forming
lower electrode
plurality
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2660490A
Inventor
Hiroshi Onoda
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Abstract

PURPOSE: To secure capacitor capacitance without difficulty in forming a pattern of a lower electrode even if a memory cell size has been reduced by forming a high melting point metal silicide layer having a plurality of protrusions which extend upward on a first conductive film constituting a capacitance means.
CONSTITUTION: A semiconductor device includes a polysilicon film 7 which is connected to an impurity diffusion layer 6 and formed on an element separation oxide film 2 and an insulating film 5, a titanium silicide film 8b having a plurality of protrusions, a silicon nitride film 9 and a polysilicon film 10 formed on the film 9. Since the titanium silicide film 8b formed on the polysilicon film 7 thus has a plurality of protrusions, a surface area increases compared to a flat lower electrode. Therefore an area which can be utilized as a capacitor area increases, resulting in an increase in capacitor capacitance. Thus even if a memory cell size has been reduced due to integration of a DRAM, capacitor capacitance sufficient for satisfying needs for stable operation of the DRAM and reliability can be secured without difficulty in forming a pattern of the lower electrode.
COPYRIGHT: (C)1991,JPO&Japio
JP2660490A 1990-02-06 1990-02-06 Semiconductor device and manufacture thereof Pending JPH03230561A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2660490A JPH03230561A (en) 1990-02-06 1990-02-06 Semiconductor device and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2660490A JPH03230561A (en) 1990-02-06 1990-02-06 Semiconductor device and manufacture thereof

Publications (1)

Publication Number Publication Date
JPH03230561A true true JPH03230561A (en) 1991-10-14

Family

ID=12198116

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2660490A Pending JPH03230561A (en) 1990-02-06 1990-02-06 Semiconductor device and manufacture thereof

Country Status (1)

Country Link
JP (1) JPH03230561A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5278091A (en) * 1993-05-04 1994-01-11 Micron Semiconductor, Inc. Process to manufacture crown stacked capacitor structures with HSG-rugged polysilicon on all sides of the storage node
US5474950A (en) * 1992-10-24 1995-12-12 Hyundai Electronics Industries Co., Ltd. Method for manufacturing a capacitor in a semiconductor device
JPH08306882A (en) * 1995-05-11 1996-11-22 Nec Corp Semiconductor device and fabrication method thereof
JP2008503077A (en) * 2004-06-18 2008-01-31 エスティマイクロエレクトロニクス(クロル 2)エスエーエスSTMicroelectronics (Crolles 2)SAS The method for manufacturing an integrated circuit and a capacitor with a capacitor having an electrode

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5474950A (en) * 1992-10-24 1995-12-12 Hyundai Electronics Industries Co., Ltd. Method for manufacturing a capacitor in a semiconductor device
US5278091A (en) * 1993-05-04 1994-01-11 Micron Semiconductor, Inc. Process to manufacture crown stacked capacitor structures with HSG-rugged polysilicon on all sides of the storage node
USRE36786E (en) * 1993-05-04 2000-07-18 Micron Technology, Inc. Process to manufacture crown stacked capacitor structures with HSG-rugged polysilicon on all sides of the storage node
JPH08306882A (en) * 1995-05-11 1996-11-22 Nec Corp Semiconductor device and fabrication method thereof
JP2008503077A (en) * 2004-06-18 2008-01-31 エスティマイクロエレクトロニクス(クロル 2)エスエーエスSTMicroelectronics (Crolles 2)SAS The method for manufacturing an integrated circuit and a capacitor with a capacitor having an electrode
US8975682B2 (en) 2004-06-18 2015-03-10 Stmicroelectronics (Crolles 2) Sas Integrated circuit comprising a capacitor with HSG metal electrodes

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