FR2681178B1 - - Google Patents

Info

Publication number
FR2681178B1
FR2681178B1 FR9210645A FR9210645A FR2681178B1 FR 2681178 B1 FR2681178 B1 FR 2681178B1 FR 9210645 A FR9210645 A FR 9210645A FR 9210645 A FR9210645 A FR 9210645A FR 2681178 B1 FR2681178 B1 FR 2681178B1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR9210645A
Other languages
French (fr)
Other versions
FR2681178A1 (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of FR2681178A1 publication Critical patent/FR2681178A1/en
Application granted granted Critical
Publication of FR2681178B1 publication Critical patent/FR2681178B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/60—Electrodes
    • H01L28/82—Electrodes with an enlarged surface, e.g. formed by texturisation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
    • H10B12/318—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor the storage electrode having multiple segments
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/60—Electrodes
    • H01L28/82—Electrodes with an enlarged surface, e.g. formed by texturisation
    • H01L28/84—Electrodes with an enlarged surface, e.g. formed by texturisation being a rough surface, e.g. using hemispherical grains
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/60—Electrodes
    • H01L28/82—Electrodes with an enlarged surface, e.g. formed by texturisation
    • H01L28/86—Electrodes with an enlarged surface, e.g. formed by texturisation having horizontal extensions

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
FR9210645A 1991-09-07 1992-09-07 Semiconductor memory device fitted with a storage electrode containing multiple micro-clefts and/or multiple micro-cylinders Granted FR2681178A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR910015626 1991-09-07
KR920005409 1992-03-31

Publications (2)

Publication Number Publication Date
FR2681178A1 FR2681178A1 (en) 1993-03-12
FR2681178B1 true FR2681178B1 (en) 1997-02-07

Family

ID=26628732

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9210645A Granted FR2681178A1 (en) 1991-09-07 1992-09-07 Semiconductor memory device fitted with a storage electrode containing multiple micro-clefts and/or multiple micro-cylinders

Country Status (6)

Country Link
JP (1) JP2690434B2 (en)
DE (1) DE4229837C2 (en)
FR (1) FR2681178A1 (en)
GB (1) GB2259406B (en)
IT (1) IT1256130B (en)
TW (1) TW222710B (en)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR960002097B1 (en) * 1992-02-28 1996-02-10 삼성전자주식회사 Method of making a capacitor for a semiconductor device
US5254503A (en) * 1992-06-02 1993-10-19 International Business Machines Corporation Process of making and using micro mask
JPH0774268A (en) * 1993-07-07 1995-03-17 Mitsubishi Electric Corp Semiconductor memory and fabrication thereof
US5383088A (en) * 1993-08-09 1995-01-17 International Business Machines Corporation Storage capacitor with a conducting oxide electrode for metal-oxide dielectrics
US5512768A (en) * 1994-03-18 1996-04-30 United Microelectronics Corporation Capacitor for use in DRAM cell using surface oxidized silicon nodules
US5869368A (en) * 1997-09-22 1999-02-09 Yew; Tri-Rung Method to increase capacitance
KR100675275B1 (en) 2004-12-16 2007-01-26 삼성전자주식회사 Semiconductor device and pad arrangement method thereof
TWI295822B (en) 2006-03-29 2008-04-11 Advanced Semiconductor Eng Method for forming a passivation layer
FR2988712B1 (en) 2012-04-02 2014-04-11 St Microelectronics Rousset INTEGRATED CIRCUIT EQUIPPED WITH A DEVICE FOR DETECTING ITS SPACE ORIENTATION AND / OR CHANGE OF THIS ORIENTATION.
FR2998417A1 (en) 2012-11-16 2014-05-23 St Microelectronics Rousset METHOD FOR PRODUCING AN INTEGRATED CIRCUIT POINT ELEMENT, AND CORRESPONDING INTEGRATED CIRCUIT
US11825645B2 (en) 2020-06-04 2023-11-21 Etron Technology, Inc. Memory cell structure
JP7339319B2 (en) * 2021-12-03 2023-09-05 ▲ゆ▼創科技股▲ふん▼有限公司 memory cell structure

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63240057A (en) * 1987-03-27 1988-10-05 Fujitsu Ltd Stack type capacitor
JPH01282855A (en) * 1988-05-09 1989-11-14 Mitsubishi Electric Corp Forming capacitor on semiconductor substrate
JPH03165552A (en) * 1989-11-24 1991-07-17 Sony Corp Stacked capacitor type dram and manufacture thereof
JPH03166730A (en) * 1989-11-27 1991-07-18 Seiko Instr Inc Manufacture of semiconductor device
DD299990A5 (en) * 1990-02-23 1992-05-14 Dresden Forschzentr Mikroelek One-transistor memory cell arrangement and method for its production
US5049517A (en) * 1990-11-07 1991-09-17 Micron Technology, Inc. Method for formation of a stacked capacitor
US5037773A (en) * 1990-11-08 1991-08-06 Micron Technology, Inc. Stacked capacitor doping technique making use of rugged polysilicon
KR930009583B1 (en) * 1990-11-29 1993-10-07 삼성전자 주식회사 Method for manufacturing a semiconductor device with villus-type capacitor
JPH04207066A (en) * 1990-11-30 1992-07-29 Matsushita Electric Ind Co Ltd Manufacture of semiconductor device
KR930009593B1 (en) * 1991-01-30 1993-10-07 삼성전자 주식회사 Lsi semiconductor memory device and manufacturing method thereof
KR940005288B1 (en) * 1991-07-11 1994-06-15 금성일렉트론 주식회사 Manufacturing method of semiconductor device

Also Published As

Publication number Publication date
ITMI922067A0 (en) 1992-09-04
TW222710B (en) 1994-04-21
GB2259406B (en) 1996-05-01
ITMI922067A1 (en) 1994-03-04
GB9218898D0 (en) 1992-10-21
DE4229837A1 (en) 1993-03-11
JPH05198745A (en) 1993-08-06
JP2690434B2 (en) 1997-12-10
DE4229837C2 (en) 1996-07-11
FR2681178A1 (en) 1993-03-12
GB2259406A (en) 1993-03-10
IT1256130B (en) 1995-11-29

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Legal Events

Date Code Title Description
ST Notification of lapse

Effective date: 20100531