DE4029826A1 - Platindiffusionsverfahren fuer einen halbleiterkoerper - Google Patents
Platindiffusionsverfahren fuer einen halbleiterkoerperInfo
- Publication number
- DE4029826A1 DE4029826A1 DE4029826A DE4029826A DE4029826A1 DE 4029826 A1 DE4029826 A1 DE 4029826A1 DE 4029826 A DE4029826 A DE 4029826A DE 4029826 A DE4029826 A DE 4029826A DE 4029826 A1 DE4029826 A1 DE 4029826A1
- Authority
- DE
- Germany
- Prior art keywords
- platinum
- silicide
- semiconductor body
- wafer
- silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 title claims description 107
- 229910052697 platinum Inorganic materials 0.000 title claims description 42
- 239000004065 semiconductor Substances 0.000 title claims description 28
- 238000009792 diffusion process Methods 0.000 title claims description 22
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 63
- 238000000034 method Methods 0.000 claims description 40
- 229910052710 silicon Inorganic materials 0.000 claims description 38
- 239000010703 silicon Substances 0.000 claims description 38
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 37
- 229910021332 silicide Inorganic materials 0.000 claims description 35
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 35
- 229910052763 palladium Inorganic materials 0.000 claims description 31
- 229910001385 heavy metal Inorganic materials 0.000 claims description 10
- 238000005566 electron beam evaporation Methods 0.000 claims description 8
- 229910052751 metal Inorganic materials 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 7
- 238000010438 heat treatment Methods 0.000 claims description 4
- 230000007704 transition Effects 0.000 claims description 4
- ZXEYZECDXFPJRJ-UHFFFAOYSA-N $l^{3}-silane;platinum Chemical compound [SiH3].[Pt] ZXEYZECDXFPJRJ-UHFFFAOYSA-N 0.000 claims description 2
- 239000000969 carrier Substances 0.000 claims description 2
- 229910021339 platinum silicide Inorganic materials 0.000 claims description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 60
- 239000010410 layer Substances 0.000 description 36
- 230000004888 barrier function Effects 0.000 description 13
- 238000005530 etching Methods 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000001704 evaporation Methods 0.000 description 3
- 230000008020 evaporation Effects 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 2
- 229910021342 tungsten silicide Inorganic materials 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 238000007605 air drying Methods 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000005238 degreasing Methods 0.000 description 1
- 230000001934 delay Effects 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000010956 nickel silver Substances 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 238000005488 sandblasting Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- QAOWNCQODCNURD-UHFFFAOYSA-N sulfuric acid Substances OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/221—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities of killers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/904—Charge carrier lifetime control
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
- Weting (AREA)
- Superconductors And Manufacturing Methods Therefor (AREA)
- Manufacture And Refinement Of Metals (AREA)
- Inert Electrodes (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US07/410,323 US4925812A (en) | 1989-09-21 | 1989-09-21 | Platinum diffusion process |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE4029826A1 true DE4029826A1 (de) | 1991-04-04 |
| DE4029826C2 DE4029826C2 (enExample) | 1993-09-09 |
Family
ID=23624227
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE4029826A Granted DE4029826A1 (de) | 1989-09-21 | 1990-09-20 | Platindiffusionsverfahren fuer einen halbleiterkoerper |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US4925812A (enExample) |
| JP (1) | JP2728147B2 (enExample) |
| AT (1) | AT398014B (enExample) |
| DE (1) | DE4029826A1 (enExample) |
| GB (1) | GB2236119B (enExample) |
| IT (1) | IT1246685B (enExample) |
Families Citing this family (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5262336A (en) * | 1986-03-21 | 1993-11-16 | Advanced Power Technology, Inc. | IGBT process to produce platinum lifetime control |
| JP2752184B2 (ja) * | 1989-09-11 | 1998-05-18 | 株式会社東芝 | 電力用半導体装置 |
| IT1247293B (it) * | 1990-05-09 | 1994-12-12 | Int Rectifier Corp | Dispositivo transistore di potenza presentante una regione ultra-profonda, a maggior concentrazione |
| IT1244119B (it) * | 1990-11-29 | 1994-07-05 | Cons Ric Microelettronica | Processo di introduzione e diffusione di ioni di platino in una fetta di silicio |
| US6624477B1 (en) | 1992-10-09 | 2003-09-23 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| TW232751B (en) * | 1992-10-09 | 1994-10-21 | Semiconductor Energy Res Co Ltd | Semiconductor device and method for forming the same |
| CN1095204C (zh) * | 1993-03-12 | 2002-11-27 | 株式会社半导体能源研究所 | 半导体器件和晶体管 |
| JP3637069B2 (ja) | 1993-03-12 | 2005-04-06 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| US5635426A (en) * | 1993-08-26 | 1997-06-03 | Fujitsu Limited | Method of making a semiconductor device having a silicide local interconnect |
| DE69421606T2 (de) * | 1994-03-30 | 2000-05-31 | Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno, Catania | Verfahren zur Herstellung von bipolaren Transistoren mit kontrollierter Speicherzeit |
| US6426248B2 (en) * | 2000-02-15 | 2002-07-30 | International Rectifier Corporation | Process for forming power MOSFET device in float zone, non-epitaxial silicon |
| US6358825B1 (en) | 2000-11-21 | 2002-03-19 | Fairchild Semiconductor Corporation | Process for controlling lifetime in a P-I-N diode and for forming diode with improved lifetime control |
| US20020195613A1 (en) * | 2001-04-02 | 2002-12-26 | International Rectifier Corp. | Low cost fast recovery diode and process of its manufacture |
| WO2003088280A1 (en) * | 2002-04-08 | 2003-10-23 | Council Of Scientific And Industrial Research | Process for the production of neodymium-iron-boron permanent magnet alloy powder |
| US7749877B2 (en) * | 2006-03-07 | 2010-07-06 | Siliconix Technology C. V. | Process for forming Schottky rectifier with PtNi silicide Schottky barrier |
| DE102007020039B4 (de) * | 2007-04-27 | 2011-07-14 | Infineon Technologies Austria Ag | Verfahren zur Herstellung einer vertikal inhomogenen Platin- oder Goldverteilung in einem Halbleitersubstrat und in einem Halbleiterbauelement, derart hergestelltes Halbleitersubstrat und Halbleiterbauelement |
| CN105814694B (zh) | 2014-10-03 | 2019-03-08 | 富士电机株式会社 | 半导体装置以及半导体装置的制造方法 |
| CN109671625A (zh) * | 2017-10-13 | 2019-04-23 | 华润微电子（重庆）有限公司 | 快恢复二极管的制备方法 |
| CN112002761A (zh) * | 2020-09-07 | 2020-11-27 | 深圳市美浦森半导体有限公司 | 一种集成frd的dmos器件的制造方法及dmos器件 |
Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3640783A (en) * | 1969-08-11 | 1972-02-08 | Trw Semiconductors Inc | Semiconductor devices with diffused platinum |
| US3963523A (en) * | 1973-04-26 | 1976-06-15 | Matsushita Electronics Corporation | Method of manufacturing semiconductor devices |
| US4206540A (en) * | 1978-06-02 | 1980-06-10 | International Rectifier Corporation | Schottky device and method of manufacture using palladium and platinum intermetallic alloys and titanium barrier |
| US4322453A (en) * | 1980-12-08 | 1982-03-30 | International Business Machines Corporation | Conductivity WSi2 (tungsten silicide) films by Pt preanneal layering |
| US4376286A (en) * | 1978-10-13 | 1983-03-08 | International Rectifier Corporation | High power MOSFET with low on-resistance and high breakdown voltage |
| US4398344A (en) * | 1982-03-08 | 1983-08-16 | International Rectifier Corporation | Method of manufacture of a schottky using platinum encapsulated between layers of palladium sintered into silicon surface |
| EP0165547A2 (en) * | 1984-06-21 | 1985-12-27 | International Business Machines Corporation | A method of forming a shallow doped region in a semiconductor substrate |
| US4593302A (en) * | 1980-08-18 | 1986-06-03 | International Rectifier Corporation | Process for manufacture of high power MOSFET with laterally distributed high carrier density beneath the gate oxide |
| US4777149A (en) * | 1983-10-17 | 1988-10-11 | Kabushiki Kaisha Toshiba | Method of manufacturing power MOSFET |
| US4855799A (en) * | 1987-12-22 | 1989-08-08 | Kabushiki Kaisha Toshiba | Power MOS FET with carrier lifetime killer |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3728592A (en) * | 1969-05-09 | 1973-04-17 | Ibm | Semiconductor structure having reduced carrier lifetime |
| DE2735769C3 (de) * | 1977-08-09 | 1980-03-27 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Verfahren zur Einstellung der Minoritätsladungsträgerlebensdauer in Halbleiterbauelementen aus einkristallinem Silizium |
| JPS54106178A (en) * | 1978-02-08 | 1979-08-20 | Mitsubishi Electric Corp | Thyristor and its manufacture |
| JPS5939898B2 (ja) * | 1978-09-26 | 1984-09-27 | 三菱電機株式会社 | 半導体装置の製造方法 |
| US4791074A (en) * | 1986-08-29 | 1988-12-13 | Kabushiki Kaisha Toshiba | Method of manufacturing a semiconductor apparatus |
-
1989
- 1989-09-21 US US07/410,323 patent/US4925812A/en not_active Expired - Fee Related
-
1990
- 1990-08-21 GB GB9018319A patent/GB2236119B/en not_active Expired - Fee Related
- 1990-09-17 IT IT02149490A patent/IT1246685B/it active IP Right Grant
- 1990-09-20 JP JP2254022A patent/JP2728147B2/ja not_active Expired - Lifetime
- 1990-09-20 DE DE4029826A patent/DE4029826A1/de active Granted
- 1990-09-21 AT AT0192490A patent/AT398014B/de not_active IP Right Cessation
Patent Citations (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3640783A (en) * | 1969-08-11 | 1972-02-08 | Trw Semiconductors Inc | Semiconductor devices with diffused platinum |
| US3963523A (en) * | 1973-04-26 | 1976-06-15 | Matsushita Electronics Corporation | Method of manufacturing semiconductor devices |
| US4206540A (en) * | 1978-06-02 | 1980-06-10 | International Rectifier Corporation | Schottky device and method of manufacture using palladium and platinum intermetallic alloys and titanium barrier |
| US4376286B1 (enExample) * | 1978-10-13 | 1993-07-20 | Int Rectifier Corp | |
| US4376286A (en) * | 1978-10-13 | 1983-03-08 | International Rectifier Corporation | High power MOSFET with low on-resistance and high breakdown voltage |
| US4593302B1 (en) * | 1980-08-18 | 1998-02-03 | Int Rectifier Corp | Process for manufacture of high power mosfet laterally distributed high carrier density beneath the gate oxide |
| US4593302A (en) * | 1980-08-18 | 1986-06-03 | International Rectifier Corporation | Process for manufacture of high power MOSFET with laterally distributed high carrier density beneath the gate oxide |
| US4322453A (en) * | 1980-12-08 | 1982-03-30 | International Business Machines Corporation | Conductivity WSi2 (tungsten silicide) films by Pt preanneal layering |
| EP0053712A1 (en) * | 1980-12-08 | 1982-06-16 | International Business Machines Corporation | Method of improving the conductivity of a microelectronic conductive tungsten silicide film and semiconductor device comprising said film |
| US4398344A (en) * | 1982-03-08 | 1983-08-16 | International Rectifier Corporation | Method of manufacture of a schottky using platinum encapsulated between layers of palladium sintered into silicon surface |
| US4777149A (en) * | 1983-10-17 | 1988-10-11 | Kabushiki Kaisha Toshiba | Method of manufacturing power MOSFET |
| EP0165547A2 (en) * | 1984-06-21 | 1985-12-27 | International Business Machines Corporation | A method of forming a shallow doped region in a semiconductor substrate |
| US4855799A (en) * | 1987-12-22 | 1989-08-08 | Kabushiki Kaisha Toshiba | Power MOS FET with carrier lifetime killer |
Non-Patent Citations (1)
| Title |
|---|
| US-Z: LISIAK, K. P. et al.: In: Journal of Applied Physics 1975, Vol. 46, No. 12, S. 5229-5235 * |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2728147B2 (ja) | 1998-03-18 |
| ATA192490A (de) | 1993-12-15 |
| GB9018319D0 (en) | 1990-10-03 |
| IT9021494A1 (it) | 1992-03-17 |
| GB2236119B (en) | 1994-05-25 |
| JPH03138926A (ja) | 1991-06-13 |
| US4925812A (en) | 1990-05-15 |
| IT9021494A0 (it) | 1990-09-17 |
| GB2236119A (en) | 1991-03-27 |
| IT1246685B (it) | 1994-11-25 |
| AT398014B (de) | 1994-08-25 |
| DE4029826C2 (enExample) | 1993-09-09 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OP8 | Request for examination as to paragraph 44 patent law | ||
| D2 | Grant after examination | ||
| 8364 | No opposition during term of opposition | ||
| 8339 | Ceased/non-payment of the annual fee |