DE69229927T2 - Integrierte Struktur einer bipolaren Leistungsanordnung mit hoher Stromdichte und einer schnellen Diode und Verfahren zu ihrer Herstellung - Google Patents

Integrierte Struktur einer bipolaren Leistungsanordnung mit hoher Stromdichte und einer schnellen Diode und Verfahren zu ihrer Herstellung

Info

Publication number
DE69229927T2
DE69229927T2 DE69229927T DE69229927T DE69229927T2 DE 69229927 T2 DE69229927 T2 DE 69229927T2 DE 69229927 T DE69229927 T DE 69229927T DE 69229927 T DE69229927 T DE 69229927T DE 69229927 T2 DE69229927 T2 DE 69229927T2
Authority
DE
Germany
Prior art keywords
production
current density
power device
high current
integrated structure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69229927T
Other languages
English (en)
Other versions
DE69229927D1 (de
Inventor
Ferruccio Frisina Ferr Frisina
Giuseppe Ferla
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SRL
CORIMME Consorzio per Ricerca Sulla Microelettronica nel Mezzogiorno
Original Assignee
STMicroelectronics SRL
CORIMME Consorzio per Ricerca Sulla Microelettronica nel Mezzogiorno
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SRL, CORIMME Consorzio per Ricerca Sulla Microelettronica nel Mezzogiorno filed Critical STMicroelectronics SRL
Application granted granted Critical
Publication of DE69229927D1 publication Critical patent/DE69229927D1/de
Publication of DE69229927T2 publication Critical patent/DE69229927T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0744—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type
    • H01L27/075—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. lateral bipolar transistor, and vertical bipolar transistor and resistor
    • H01L27/0755—Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
    • H01L27/0761—Vertical bipolar transistor in combination with diodes only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/221—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities of killers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/904—Charge carrier lifetime control

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Thyristors (AREA)
DE69229927T 1991-03-28 1992-03-17 Integrierte Struktur einer bipolaren Leistungsanordnung mit hoher Stromdichte und einer schnellen Diode und Verfahren zu ihrer Herstellung Expired - Fee Related DE69229927T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
ITMI910836A IT1245365B (it) 1991-03-28 1991-03-28 Struttura integrata di dispositivo bipolare di potenza ad elevata densita' di corrente e diodo veloce e relativo processo di fabbricazione

Publications (2)

Publication Number Publication Date
DE69229927D1 DE69229927D1 (de) 1999-10-14
DE69229927T2 true DE69229927T2 (de) 2000-01-20

Family

ID=11359289

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69229927T Expired - Fee Related DE69229927T2 (de) 1991-03-28 1992-03-17 Integrierte Struktur einer bipolaren Leistungsanordnung mit hoher Stromdichte und einer schnellen Diode und Verfahren zu ihrer Herstellung

Country Status (5)

Country Link
US (2) US5343068A (de)
EP (1) EP0506170B1 (de)
JP (1) JP3125112B2 (de)
DE (1) DE69229927T2 (de)
IT (1) IT1245365B (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0642085A (ja) * 1992-07-21 1994-02-15 Daiwa House Ind Co Ltd 外壁の開口フレーム固定構造
EP0675527B1 (de) * 1994-03-30 1999-11-10 Consorzio per la Ricerca sulla Microelettronica nel Mezzogiorno Verfahren zur Herstellung von bipolaren Transistoren mit kontrollierter Speicherzeit
US5838057A (en) * 1994-08-03 1998-11-17 Texas Instruments Incorporated Transistor switches
GB2292252A (en) * 1994-08-05 1996-02-14 Texas Instruments Ltd Rapid turn off semiconductor devices
GB9509301D0 (en) * 1995-05-06 1995-06-28 Atomic Energy Authority Uk An improved process for the production of semi-conductor devices
GB2325343A (en) * 1997-05-14 1998-11-18 Mitel Semiconductor Ltd Semiconductor devices with p-n junctions
GB9709642D0 (en) * 1997-05-14 1997-07-02 Plessey Semiconductors Ltd Improvements in or relating to semiconductor devices
US6358825B1 (en) * 2000-11-21 2002-03-19 Fairchild Semiconductor Corporation Process for controlling lifetime in a P-I-N diode and for forming diode with improved lifetime control
DE102007020039B4 (de) * 2007-04-27 2011-07-14 Infineon Technologies Austria Ag Verfahren zur Herstellung einer vertikal inhomogenen Platin- oder Goldverteilung in einem Halbleitersubstrat und in einem Halbleiterbauelement, derart hergestelltes Halbleitersubstrat und Halbleiterbauelement
CN115274436B (zh) * 2022-09-28 2023-01-10 瑞森半导体科技(湖南)有限公司 一种快恢复二极管及其制备方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3486950A (en) * 1967-04-26 1969-12-30 Motorola Inc Localized control of carrier lifetimes in p-n junction devices and integrated circuits
DE1619972A1 (de) * 1967-05-02 1971-03-18 Licentia Gmbh Verfahren zum Gettern von metallischen Verunreinigungen aus Siliziumkristallen
US3645808A (en) * 1967-07-31 1972-02-29 Hitachi Ltd Method for fabricating a semiconductor-integrated circuit
DE1942838A1 (de) * 1968-08-24 1970-02-26 Sony Corp Verfahren zur Herstellung integrierter Schaltungen
US3625781A (en) * 1969-05-09 1971-12-07 Ibm Method of reducing carrier lifetime in semiconductor structures
US3640783A (en) * 1969-08-11 1972-02-08 Trw Semiconductors Inc Semiconductor devices with diffused platinum
JPS52149666U (de) * 1976-05-11 1977-11-12
JPS56114367A (en) * 1980-02-14 1981-09-08 Toshiba Corp Semiconductor device
DE3331631A1 (de) * 1982-09-01 1984-03-01 Mitsubishi Denki K.K., Tokyo Halbleiter-bauelement
US5128742A (en) * 1988-04-14 1992-07-07 Powerex, Inc. Variable gain switch
FR2638892B1 (fr) * 1988-11-09 1992-12-24 Sgs Thomson Microelectronics Procede de modulation de la quantite d'or diffusee dans un substrat de silicium et diode rapide obtenue par ce procede

Also Published As

Publication number Publication date
ITMI910836A1 (it) 1992-09-28
IT1245365B (it) 1994-09-20
EP0506170B1 (de) 1999-09-08
DE69229927D1 (de) 1999-10-14
ITMI910836A0 (it) 1991-03-28
EP0506170A1 (de) 1992-09-30
JP3125112B2 (ja) 2001-01-15
US5343068A (en) 1994-08-30
JPH0822995A (ja) 1996-01-23
US5468660A (en) 1995-11-21

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee