DE3686315T2 - Verfahren zur herstellung einer halbleiterstruktur. - Google Patents

Verfahren zur herstellung einer halbleiterstruktur.

Info

Publication number
DE3686315T2
DE3686315T2 DE8686309574T DE3686315T DE3686315T2 DE 3686315 T2 DE3686315 T2 DE 3686315T2 DE 8686309574 T DE8686309574 T DE 8686309574T DE 3686315 T DE3686315 T DE 3686315T DE 3686315 T2 DE3686315 T2 DE 3686315T2
Authority
DE
Germany
Prior art keywords
producing
semiconductor structure
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8686309574T
Other languages
English (en)
Other versions
DE3686315D1 (de
Inventor
Tadashi Fukuzawa
Naoki Chinone
Akira Tonomura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of DE3686315D1 publication Critical patent/DE3686315D1/de
Application granted granted Critical
Publication of DE3686315T2 publication Critical patent/DE3686315T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0277—Electrolithographic processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/266—Bombardment with radiation with high-energy radiation producing ion implantation using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/122—Single quantum well structures
    • H01L29/125—Quantum wire structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/122—Single quantum well structures
    • H01L29/127—Quantum box structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/7722—Field effect transistors using static field induced regions, e.g. SIT, PBT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/341—Structures having reduced dimensionality, e.g. quantum wires
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/046—Electron beam treatment of devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/072—Heterojunctions
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/137—Resists
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/942—Masking
    • Y10S438/948—Radiation resist
    • Y10S438/949—Energy beam treating radiation resist on semiconductor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/942—Masking
    • Y10S438/948—Radiation resist
    • Y10S438/95—Multilayer mask including nonradiation sensitive layer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/962—Quantum dots and lines
DE8686309574T 1985-12-16 1986-12-09 Verfahren zur herstellung einer halbleiterstruktur. Expired - Fee Related DE3686315T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60280934A JPS62140485A (ja) 1985-12-16 1985-12-16 半導体構造体およびその製造方法

Publications (2)

Publication Number Publication Date
DE3686315D1 DE3686315D1 (de) 1992-09-10
DE3686315T2 true DE3686315T2 (de) 1993-03-25

Family

ID=17631959

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8686309574T Expired - Fee Related DE3686315T2 (de) 1985-12-16 1986-12-09 Verfahren zur herstellung einer halbleiterstruktur.

Country Status (5)

Country Link
US (1) US4748132A (de)
EP (1) EP0227373B1 (de)
JP (1) JPS62140485A (de)
KR (1) KR870006626A (de)
DE (1) DE3686315T2 (de)

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4786951A (en) * 1985-02-12 1988-11-22 Mitsubishi Denki Kabushiki Kaisha Semiconductor optical element and a process for producing the same
US4871690A (en) * 1986-01-21 1989-10-03 Xerox Corporation Semiconductor structures utilizing semiconductor support means selectively pretreated with migratory defects
JPH0632343B2 (ja) * 1986-11-27 1994-04-27 日本電気株式会社 半導体レ−ザ
JP2651154B2 (ja) * 1987-09-04 1997-09-10 株式会社日立製作所 電子線ホログラフィ装置
JPH01143283A (ja) * 1987-11-27 1989-06-05 Matsushita Electric Ind Co Ltd 半導体レーザ素子
US5145792A (en) * 1988-05-23 1992-09-08 Optical Measurement Technology Development Co., Ltd. Method of fabricating a semiconductor optical device
US5371379A (en) * 1988-06-21 1994-12-06 Matsushita Electric Industrial Co. Ltd. Production instrument for producing compound semiconductor quantum boxes and light emitting devices using those quantum boxes
US5229170A (en) * 1988-06-21 1993-07-20 Matsushita Electric Industrial Co., Ltd. Method for electrostatically transporting ultrafine particles by use of a needle electrode
JPH01319985A (ja) * 1988-06-21 1989-12-26 Matsushita Electric Ind Co Ltd 化合物半導体量子箱の製造方法およびその製造装置ならびに発光装置
US4883769A (en) * 1988-08-18 1989-11-28 The United States Of America As Represented By The Secretary Of The Army Method of making a multidimensional quantum-well array
US4962057A (en) * 1988-10-13 1990-10-09 Xerox Corporation Method of in situ photo induced evaporation enhancement of compound thin films during or after epitaxial growth
JP2776862B2 (ja) * 1989-01-13 1998-07-16 株式会社日立製作所 反射電子線ホログラフイー装置
JPH02260417A (ja) * 1989-03-30 1990-10-23 Mitsubishi Electric Corp 半導体薄膜の結晶成長方法及びその装置
JPH03151684A (ja) * 1989-11-08 1991-06-27 Mitsubishi Electric Corp 多波長集積化半導体レーザの製造方法
US5126281A (en) * 1990-09-11 1992-06-30 Hewlett-Packard Company Diffusion using a solid state source
US5170226A (en) * 1991-05-17 1992-12-08 International Business Machines Corporation Fabrication of quantum devices in compound semiconductor layers and resulting structures
US5159201A (en) * 1991-07-26 1992-10-27 International Business Machines Corporation Shape decompositon system and method
US5251140A (en) * 1991-07-26 1993-10-05 International Business Machines Corporation E-beam control data compaction system and method
US5413884A (en) * 1992-12-14 1995-05-09 American Telephone And Telegraph Company Grating fabrication using electron beam lithography
JP2767676B2 (ja) * 1993-03-19 1998-06-18 松下電器産業株式会社 化合物半導体の微細構造形成方法
US6194240B1 (en) * 1993-12-21 2001-02-27 Lucent Technologies Inc. Method for fabrication of wavelength selective electro-optic grating for DFB/DBR lasers
EP0661733A2 (de) * 1993-12-21 1995-07-05 International Business Machines Corporation Eindimensionale Silizium-Quantumdrahtelementen und Verfahren zur Herstellung
JP3468866B2 (ja) * 1994-09-16 2003-11-17 富士通株式会社 ３次元量子閉じ込めを利用した半導体装置
US20020028390A1 (en) 1997-09-22 2002-03-07 Mohammad A. Mazed Techniques for fabricating and packaging multi-wavelength semiconductor laser array devices (chips) and their applications in system architectures
US5953356A (en) * 1997-11-04 1999-09-14 Wisconsin Alumni Research Foundation Intersubband quantum box semiconductor laser
US6639354B1 (en) * 1999-07-23 2003-10-28 Sony Corporation Light emitting device, production method thereof, and light emitting apparatus and display unit using the same
US6294450B1 (en) * 2000-03-01 2001-09-25 Hewlett-Packard Company Nanoscale patterning for the formation of extensive wires
US7408966B2 (en) * 2006-08-18 2008-08-05 Wisconsin Alumni Research Foundation Intersubband quantum box stack lasers
JP6242772B2 (ja) * 2014-09-12 2017-12-06 株式会社神戸製鋼所 回転機の異常検知装置、回転機の異常検知方法、及び、回転機
JP2016082117A (ja) * 2014-10-20 2016-05-16 株式会社ニューフレアテクノロジー レジスト膜の形成方法および描画方法
CN107910371B (zh) * 2017-09-21 2021-02-12 中国电子科技集团公司第五十五研究所 一种改善GaN HEMT表面电子束直写电荷积累的方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3659947A (en) * 1970-06-18 1972-05-02 Gco Holographic apparatus with automatic control system for maintaining constant phase relation between reference and object beams
US3672776A (en) * 1970-10-09 1972-06-27 Trw Inc Holographic real-time interferometry with a reconstructed reference beam
US3929527A (en) * 1974-06-11 1975-12-30 Us Army Molecular beam epitaxy of alternating metal-semiconductor films
JPS55103718A (en) * 1979-02-05 1980-08-08 Nippon Telegr & Teleph Corp <Ntt> Forming method of single crystal thin film onto base plate and its equipment
US4377437A (en) * 1981-05-22 1983-03-22 Bell Telephone Laboratories, Incorporated Device lithography by selective ion implantation
US4517280A (en) * 1982-11-04 1985-05-14 Sumitomo Electric Industries, Ltd. Process for fabricating integrated optics
JPS59225584A (ja) * 1983-06-06 1984-12-18 Matsushita Electric Ind Co Ltd 分布帰還型半導体レ−ザ素子
US4612072A (en) * 1983-06-24 1986-09-16 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Method for growing low defect, high purity crystalline layers utilizing lateral overgrowth of a patterned mask
JPS6081829A (ja) * 1983-10-11 1985-05-09 Nec Corp 半導体のエツチング方法
US4634645A (en) * 1984-04-13 1987-01-06 Nippon Telegraph And Telephone Corporation Method of forming resist micropattern
US4575924A (en) * 1984-07-02 1986-03-18 Texas Instruments Incorporated Process for fabricating quantum-well devices utilizing etch and refill techniques
US4622114A (en) * 1984-12-20 1986-11-11 At&T Bell Laboratories Process of producing devices with photoelectrochemically produced gratings

Also Published As

Publication number Publication date
EP0227373A2 (de) 1987-07-01
KR870006626A (ko) 1987-07-13
EP0227373A3 (en) 1989-07-26
DE3686315D1 (de) 1992-09-10
US4748132A (en) 1988-05-31
JPS62140485A (ja) 1987-06-24
EP0227373B1 (de) 1992-08-05

Similar Documents

Publication Publication Date Title
DE3686315D1 (de) Verfahren zur herstellung einer halbleiterstruktur.
DE3677750D1 (de) Verfahren zur herstellung einer nockenwelle.
DE3777047D1 (de) Verfahren zur herstellung einer anschlusselektrode einer halbleiteranordnung.
DE3686125T2 (de) Verfahren zur herstellung einer integrierten schaltung.
DE3381185D1 (de) Verfahren zur herstellung einer vertikalen leistungs-mosfet-struktur.
DE3485924T2 (de) Verfahren zur herstellung einer halbleiterlaservorrichtung.
DE3788486T2 (de) Verfahren zur Herstellung einer monolithischen Hochspannungshalbleiterschaltung.
DE68907507D1 (de) Verfahren zur herstellung einer halbleitervorrichtung.
DE3676124D1 (de) Verfahren zur herstellung einer beschichteten mikrotomoklinge.
DE3775459D1 (de) Verfahren zur herstellung einer diamantenschicht.
DE3582143D1 (de) Verfahren zur herstellung einer halbleitervorrichtung.
DE3672570D1 (de) Verfahren zur herstellung einer planaren halbleiteranordnung mit graeben.
DE3381126D1 (de) Verfahren zur herstellung einer monokristallinen halbleiterschicht.
DE3779802D1 (de) Verfahren zur herstellung einer halbleiteranordnung.
DE3689164D1 (de) Verfahren zur Herstellung einer elastischen Form.
DE3686132D1 (de) Verfahren zur herstellung von selbstalignierten halbleiterstrukturen.
DE3484526D1 (de) Verfahren zur herstellung einer halbleiteranordnung.
DE3669806D1 (de) Verfahren zur herstellung einer raeumlich periodischen halbleiter-schichtenfolge.
DE3683679D1 (de) Verfahren zur herstellung einer kontaktanordnung fuer eine halbleiteranordnung.
DE3580350D1 (de) Verfahren zur herstellung einer frukto-oligosaccharose.
DE3672928D1 (de) Verfahren zur herstellung einer nachgiebigen walze.
DE3486144D1 (de) Verfahren zur herstellung einer halbleiteranordnung.
DE3578263D1 (de) Verfahren zur herstellung einer halbleiteranordnung.
DE3673208D1 (de) Verfahren zur herstellung einer ldd-halbleiteranordnung.
DE3868669D1 (de) Verfahren zur herstellung einer polyglycidylamin-verbindung.

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee