DE3381185D1 - Verfahren zur herstellung einer vertikalen leistungs-mosfet-struktur. - Google Patents

Verfahren zur herstellung einer vertikalen leistungs-mosfet-struktur.

Info

Publication number
DE3381185D1
DE3381185D1 DE8383400983T DE3381185T DE3381185D1 DE 3381185 D1 DE3381185 D1 DE 3381185D1 DE 8383400983 T DE8383400983 T DE 8383400983T DE 3381185 T DE3381185 T DE 3381185T DE 3381185 D1 DE3381185 D1 DE 3381185D1
Authority
DE
Germany
Prior art keywords
producing
power mosfet
vertical power
mosfet structure
vertical
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8383400983T
Other languages
English (en)
Inventor
Madhukar B Vora
Vikram M Patel
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fairchild Semiconductor Corp
Original Assignee
Fairchild Semiconductor Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fairchild Semiconductor Corp filed Critical Fairchild Semiconductor Corp
Application granted granted Critical
Publication of DE3381185D1 publication Critical patent/DE3381185D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1095—Body region, i.e. base region, of DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41725—Source or drain electrodes for field effect devices
    • H01L29/41766—Source or drain electrodes for field effect devices with at least part of the source or drain electrode having contact below the semiconductor surface, e.g. the source or drain electrode formed at least partially in a groove or with inclusions of conductor inside the semiconductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
DE8383400983T 1982-05-20 1983-05-17 Verfahren zur herstellung einer vertikalen leistungs-mosfet-struktur. Expired - Lifetime DE3381185D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/380,170 US4503598A (en) 1982-05-20 1982-05-20 Method of fabricating power MOSFET structure utilizing self-aligned diffusion and etching techniques

Publications (1)

Publication Number Publication Date
DE3381185D1 true DE3381185D1 (de) 1990-03-08

Family

ID=23500159

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8383400983T Expired - Lifetime DE3381185D1 (de) 1982-05-20 1983-05-17 Verfahren zur herstellung einer vertikalen leistungs-mosfet-struktur.

Country Status (4)

Country Link
US (1) US4503598A (de)
EP (1) EP0094891B1 (de)
JP (1) JPS58210678A (de)
DE (1) DE3381185D1 (de)

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US5179034A (en) * 1987-08-24 1993-01-12 Hitachi, Ltd. Method for fabricating insulated gate semiconductor device
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JPH02267944A (ja) * 1989-03-15 1990-11-01 Siemens Ag 電力用ｍｏｓｆｅｔ
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US5216264A (en) * 1989-06-07 1993-06-01 Sharp Kabushiki Kaisha Silicon carbide MOS type field-effect transistor with at least one of the source and drain regions is formed by the use of a schottky contact
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US4931408A (en) * 1989-10-13 1990-06-05 Siliconix Incorporated Method of fabricating a short-channel low voltage DMOS transistor
US5132238A (en) * 1989-12-28 1992-07-21 Nissan Motor Co., Ltd. Method of manufacturing semiconductor device utilizing an accumulation layer
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US5122848A (en) * 1991-04-08 1992-06-16 Micron Technology, Inc. Insulated-gate vertical field-effect transistor with high current drive and minimum overlap capacitance
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US5338698A (en) * 1992-12-18 1994-08-16 International Business Machines Corporation Method of fabricating an ultra-short channel field effect transistor
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US5545915A (en) * 1995-01-23 1996-08-13 Delco Electronics Corporation Semiconductor device having field limiting ring and a process therefor
JP3325736B2 (ja) * 1995-02-09 2002-09-17 三菱電機株式会社 絶縁ゲート型半導体装置
KR0143459B1 (ko) * 1995-05-22 1998-07-01 한민구 모오스 게이트형 전력 트랜지스터
US5675164A (en) * 1995-06-07 1997-10-07 International Business Machines Corporation High performance multi-mesa field effect transistor
US5858844A (en) * 1995-06-07 1999-01-12 Advanced Micro Devices, Inc. Method for construction and fabrication of submicron field-effect transistors by optimization of poly oxide process
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Also Published As

Publication number Publication date
EP0094891A3 (en) 1985-07-31
EP0094891A2 (de) 1983-11-23
EP0094891B1 (de) 1990-01-31
US4503598A (en) 1985-03-12
JPS58210678A (ja) 1983-12-07

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