DE3777047D1 - Verfahren zur herstellung einer anschlusselektrode einer halbleiteranordnung. - Google Patents

Verfahren zur herstellung einer anschlusselektrode einer halbleiteranordnung.

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Publication number
DE3777047D1
DE3777047D1 DE8787307459T DE3777047T DE3777047D1 DE 3777047 D1 DE3777047 D1 DE 3777047D1 DE 8787307459 T DE8787307459 T DE 8787307459T DE 3777047 T DE3777047 T DE 3777047T DE 3777047 D1 DE3777047 D1 DE 3777047D1
Authority
DE
Germany
Prior art keywords
producing
connecting electrode
semiconductor arrangement
semiconductor
arrangement
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8787307459T
Other languages
English (en)
Inventor
Hitoshi Hasegawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP61203035A external-priority patent/JPS6358858A/ja
Priority claimed from JP61200101A external-priority patent/JPS6356941A/ja
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Application granted granted Critical
Publication of DE3777047D1 publication Critical patent/DE3777047D1/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H01L24/10Bump connectors ; Manufacturing methods related thereto
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    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
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    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10Bump connectors ; Manufacturing methods related thereto
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    • H01L2924/01022Titanium [Ti]
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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Wire Bonding (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Weting (AREA)
DE8787307459T 1986-08-28 1987-08-24 Verfahren zur herstellung einer anschlusselektrode einer halbleiteranordnung. Expired - Fee Related DE3777047D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP61203035A JPS6358858A (ja) 1986-08-28 1986-08-28 半導体装置の製造方法
JP61200101A JPS6356941A (ja) 1986-08-28 1986-08-28 半導体装置の製造方法

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US (1) US4742023A (de)
EP (1) EP0261799B1 (de)
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DE (1) DE3777047D1 (de)

Families Citing this family (51)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5083613A (en) * 1989-02-14 1992-01-28 Canadian Occidental Petroleum, Ltd. Process for producing bitumen
JPH0719841B2 (ja) * 1987-10-02 1995-03-06 株式会社東芝 半導体装置
US5136363A (en) * 1987-10-21 1992-08-04 Kabushiki Kaisha Toshiba Semiconductor device with bump electrode
KR910006967B1 (ko) * 1987-11-18 1991-09-14 가시오 게이상기 가부시기가이샤 반도체 장치의 범프 전극 구조 및 그 형성 방법
US4966235A (en) * 1988-07-14 1990-10-30 Canadian Occidental Petroleum Ltd. In situ application of high temperature resistant surfactants to produce water continuous emulsions for improved crude recovery
US5243363A (en) * 1988-07-22 1993-09-07 Canon Kabushiki Kaisha Ink-jet recording head having bump-shaped electrode and protective layer providing structural support
US5076486A (en) * 1989-02-28 1991-12-31 Rockwell International Corporation Barrier disk
US5008736A (en) * 1989-11-20 1991-04-16 Motorola, Inc. Thermal protection method for a power device
US5083187A (en) * 1990-05-16 1992-01-21 Texas Instruments Incorporated Integrated circuit device having bumped power supply buses over active surface areas and method of manufacture thereof
US5252180A (en) * 1990-05-17 1993-10-12 Xerox Corporation Electrical contacts for an electro-optic modulator
JP2563652B2 (ja) * 1990-07-17 1996-12-11 株式会社東芝 半導体装置及びその製造方法
US5192681A (en) * 1990-08-31 1993-03-09 Texas Instruments Incorporated Low cost erasable programmable read only memory package
US5136367A (en) * 1990-08-31 1992-08-04 Texas Instruments Incorporated Low cost erasable programmable read only memory package
JPH04155835A (ja) * 1990-10-18 1992-05-28 Mitsubishi Electric Corp 集積回路装置の製造方法
JPH07109830B2 (ja) * 1990-10-22 1995-11-22 インターナショナル・ビジネス・マシーンズ・コーポレイション 薄膜積層体における障壁の改良
JP2796919B2 (ja) * 1992-05-11 1998-09-10 インターナショナル・ビジネス・マシーンズ・コーポレーション メタライゼーション複合体および半導体デバイス
US5346858A (en) * 1992-07-16 1994-09-13 Texas Instruments Incorporated Semiconductor non-corrosive metal overcoat
US5248903A (en) * 1992-09-18 1993-09-28 Lsi Logic Corporation Composite bond pads for semiconductor devices
US5404047A (en) * 1992-07-17 1995-04-04 Lsi Logic Corporation Semiconductor die having a high density array of composite bond pads
DE4225138A1 (de) * 1992-07-30 1994-02-03 Daimler Benz Ag Multichipmodul und Verfahren zu dessen Herstellung
JP3007497B2 (ja) 1992-11-11 2000-02-07 三菱電機株式会社 半導体集積回路装置、その製造方法、及びその実装方法
JP3184014B2 (ja) * 1993-07-26 2001-07-09 株式会社東芝 半導体装置
US5508561A (en) * 1993-11-15 1996-04-16 Nec Corporation Apparatus for forming a double-bump structure used for flip-chip mounting
US5384283A (en) * 1993-12-10 1995-01-24 International Business Machines Corporation Resist protection of ball limiting metal during etch process
US5665639A (en) * 1994-02-23 1997-09-09 Cypress Semiconductor Corp. Process for manufacturing a semiconductor device bump electrode using a rapid thermal anneal
US5508229A (en) * 1994-05-24 1996-04-16 National Semiconductor Corporation Method for forming solder bumps in semiconductor devices
DE69632969T2 (de) * 1995-03-20 2005-07-28 Unitive International Ltd. Verfahren zum Bilden von Loterhebungen und Loterhebungsstruktur
US6030851A (en) * 1995-06-07 2000-02-29 Grandmont; Paul E. Method for overpressure protected pressure sensor
KR970053198A (ko) * 1995-12-30 1997-07-29 구자홍 반도체소자의 본딩장치 및 그 제조방법
US5620611A (en) * 1996-06-06 1997-04-15 International Business Machines Corporation Method to improve uniformity and reduce excess undercuts during chemical etching in the manufacture of solder pads
US6130477A (en) * 1999-03-17 2000-10-10 Chen; Tsung-Chieh Thin enhanced TAB BGA package having improved heat dissipation
US20020076910A1 (en) 1999-12-15 2002-06-20 Pace Benedict G. High density electronic interconnection
US6593222B2 (en) * 2001-09-07 2003-07-15 Lattice Corporation Method to improve the reliability of thermosonic gold to aluminum wire bonds
DE10146353B4 (de) * 2001-09-20 2007-08-16 Advanced Micro Devices, Inc., Sunnyvale Verfahren zur Herstellung einer Lötperle und Lötperlenstruktur
US6750134B2 (en) * 2002-01-09 2004-06-15 Texas Instruments Incorporated Variable cross-section plated mushroom with stud for bumping
US6686665B1 (en) * 2002-09-04 2004-02-03 Zeevo, Inc. Solder pad structure for low temperature co-fired ceramic package and method for making the same
DE10355953B4 (de) * 2003-11-29 2005-10-20 Infineon Technologies Ag Verfahren zum Galvanisieren und Kontaktvorsprungsanordnung
JP2006131926A (ja) * 2004-11-02 2006-05-25 Sharp Corp 微細孔に対するメッキ方法、及びこれを用いた金バンプ形成方法と半導体装置の製造方法、並びに半導体装置
TWI368974B (en) 2004-11-12 2012-07-21 Chippac Inc Ball-on-trace wire bond interconnection
US7868468B2 (en) * 2004-11-12 2011-01-11 Stats Chippac Ltd. Wire bonding structure and method that eliminates special wire bondable finish and reduces bonding pitch on substrates
US8519517B2 (en) 2004-11-13 2013-08-27 Stats Chippac Ltd. Semiconductor system with fine pitch lead fingers and method of manufacturing thereof
US7731078B2 (en) * 2004-11-13 2010-06-08 Stats Chippac Ltd. Semiconductor system with fine pitch lead fingers
KR100626617B1 (ko) * 2004-12-07 2006-09-25 삼성전자주식회사 반도체 패키지용 배선 기판의 볼 랜드 구조
US20070001301A1 (en) * 2005-06-08 2007-01-04 Yongqian Wang Under bump metallization design to reduce dielectric layer delamination
US7659192B2 (en) * 2006-12-29 2010-02-09 Intel Corporation Methods of forming stepped bumps and structures formed thereby
TW200836276A (en) * 2007-02-16 2008-09-01 Chipmos Technologies Inc Conductive structure for a semiconductor integrated circuit and method for forming the same
US7701049B2 (en) * 2007-08-03 2010-04-20 Stats Chippac Ltd. Integrated circuit packaging system for fine pitch substrates
US7713860B2 (en) * 2007-10-13 2010-05-11 Wan-Ling Yu Method of forming metallic bump on I/O pad
US8173536B2 (en) * 2009-11-02 2012-05-08 Stats Chippac, Ltd. Semiconductor device and method of forming column interconnect structure to reduce wafer stress
US8884432B2 (en) 2011-06-08 2014-11-11 Tessera, Inc. Substrate and assembly thereof with dielectric removal for increased post height
US9859234B2 (en) 2015-08-06 2018-01-02 Invensas Corporation Methods and structures to repair device warpage

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3458925A (en) * 1966-01-20 1969-08-05 Ibm Method of forming solder mounds on substrates
US3462349A (en) * 1966-09-19 1969-08-19 Hughes Aircraft Co Method of forming metal contacts on electrical components
US3585713A (en) * 1968-03-25 1971-06-22 Sony Corp Method of making connecting parts of semiconductor devices or the like
DE1954499A1 (de) * 1969-10-29 1971-05-06 Siemens Ag Verfahren zur Herstellung von Halbleiterschaltkreisen mit Leitbahnen
GB1337283A (en) * 1969-12-26 1973-11-14 Hitachi Ltd Method of manufacturing a semiconductor device
DE2032872B2 (de) * 1970-07-02 1975-03-20 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zum Herstellen weichlötfähiger Kontakte zum Einbau von Halbleiterbauelementen in Gehäuse
US3821785A (en) * 1972-03-27 1974-06-28 Signetics Corp Semiconductor structure with bumps
US4293637A (en) * 1977-05-31 1981-10-06 Matsushita Electric Industrial Co., Ltd. Method of making metal electrode of semiconductor device
JPS5633857A (en) * 1979-08-28 1981-04-04 Nec Corp Semiconductor device
US4514751A (en) * 1982-12-23 1985-04-30 International Business Machines Corporation Compressively stresses titanium metallurgy for contacting passivated semiconductor devices
JPS6032335A (ja) * 1983-08-02 1985-02-19 Nec Corp 半導体装置

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US4742023A (en) 1988-05-03
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KR900006511B1 (ko) 1990-09-03
KR880003409A (ko) 1988-05-17

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