KR900006511B1 - 반도체장치를 제조하는 방법 - Google Patents
반도체장치를 제조하는 방법 Download PDFInfo
- Publication number
- KR900006511B1 KR900006511B1 KR1019870009416A KR870009416A KR900006511B1 KR 900006511 B1 KR900006511 B1 KR 900006511B1 KR 1019870009416 A KR1019870009416 A KR 1019870009416A KR 870009416 A KR870009416 A KR 870009416A KR 900006511 B1 KR900006511 B1 KR 900006511B1
- Authority
- KR
- South Korea
- Prior art keywords
- barrier metal
- metal layer
- stopper
- bump
- groove
- Prior art date
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 23
- 238000000034 method Methods 0.000 title claims description 40
- 229910052751 metal Inorganic materials 0.000 claims abstract description 64
- 239000002184 metal Substances 0.000 claims abstract description 64
- 230000004888 barrier function Effects 0.000 claims abstract description 58
- 239000000758 substrate Substances 0.000 claims abstract description 6
- 238000007747 plating Methods 0.000 claims description 16
- 229910000679 solder Inorganic materials 0.000 claims description 14
- 239000010931 gold Substances 0.000 claims description 11
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 10
- 229910052782 aluminium Inorganic materials 0.000 claims description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 8
- 239000010936 titanium Substances 0.000 claims description 8
- 239000010949 copper Substances 0.000 claims description 7
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 7
- 229910052737 gold Inorganic materials 0.000 claims description 7
- 229910052759 nickel Inorganic materials 0.000 claims description 5
- 238000001039 wet etching Methods 0.000 claims description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 238000002844 melting Methods 0.000 claims 1
- 230000008018 melting Effects 0.000 claims 1
- 239000005360 phosphosilicate glass Substances 0.000 claims 1
- 235000012239 silicon dioxide Nutrition 0.000 claims 1
- 239000000377 silicon dioxide Substances 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 abstract description 7
- 239000000463 material Substances 0.000 abstract description 6
- 238000005530 etching Methods 0.000 description 13
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 4
- 238000009713 electroplating Methods 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 235000001674 Agaricus brunnescens Nutrition 0.000 description 1
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 229910020658 PbSn Inorganic materials 0.000 description 1
- 101150071746 Pbsn gene Proteins 0.000 description 1
- 241000630329 Scomberesox saurus saurus Species 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 229960001484 edetic acid Drugs 0.000 description 1
- 238000004070 electrodeposition Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 239000005368 silicate glass Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
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Abstract
내용 없음.
Description
제1a 내지 1e도는 종래의 반도체장치의 제조방법을 설명하기 위한 단면도,
제2a 내지 2e도는 본 발명의 제1실시예의 공정을 설명하기 위한 단면도,
제3도는 제2c도의 평면도,
제4a 내지 4c도 및 제5도는 본 발명의 제2 및 제3실시예의 공정을 설명하는 단면도,
제6도는 제4a도의 개략 평면도,
제7a 내지 7d도는 본 발명의 제4실시예의 공정을 설명하는 단면도,
제8도는 제7a의 개략 평면도,
제9a 및 9b도는 본 발명의 제5실시예의 공정을 설명하는 단면도,
제10a 및 10b도는 본 발명의 제6실시예의 공정을 설명하는 단면도.
* 도면의 주요부분에 대한 부호의 설명
11 : 반도체 기판 12 : 알루미늄 전극
13 : PSG막 15 : 개구
16 : 배리어 금속막 17 : 제2레지스트 패턴
18 : 홈 20 : 스트퍼
22 : 범프
본 발명은 반도체장치를 제조하기 위한 방법에 관한 것이다. 특히 반도체장치의 단자전극으로서 사용되는금속범프(bump)를 구비하는 반도체장치를 제조하는 방법에 관한 것이다.
통상적으로 반도체장치의 단자전극은온 예를 들어 Au와이어 단자전극에 의해 형성된다. 그러나 큰 돌출 금속(범프)가 반도체장치의 전극에 부착되고 이 돌출금속에 와어어가 연결되는 전극구조가 알려져 있다.
범프를 갖는 반도체장치는 와이어본딩을 요하지 않기 때문에 반도체장치의 패키지 두께가 감소되며 반도체 칩의 본딩패드(전극영역)의 크기가 현저하게 작아진다. 따라서 범프를 갖는 반도체장치는 플래트형 패키지에 IC카드에 조립될 수 있으며 반도체장치 그 자체의 크기가 현저하게 감소된다는 장점을 갖는다. 더우기 장치는 다수의 반도체 칩 전기회로를 구비함에 의해 형성되므로 고밀도 실장이 가능하다. 그럼에도 불구하고 금속범프 그 자체는 전극에 대해 우수한 접착력을 가져야 한다.
제1a 내지 1e도는 상기한 장치를 제공하는 종래방법을 설명하는 단면도이다.
제1a도에 표시된 바와 같이 반도체 기판(1)위에 알루미늄 전극(2)이 구비되어 있고 포스포실리케이트 유리(PSG)막(3)이 기상성장(CVD) 법에 의해 기판(1)과 알루미늄 전극(2)위에 형성된다. 산화실리콘(SiO2)막이 PSG막(3) 대신 사용될 수도 있다.
그후 제1b도에 표시된 바와 같이 제1레지스트막이 PSG막(3)위에 코팅되고, 노출 및 현상되어 전극(2)위의 요망위치에 개구를 갖는 제1레지스트 패턴(4)을 형성한다. PSG막(3)은 그후 마스크로서 레지스트막패턴(4)을 사용하여 에칭되며 그 결과 전극(2)위에 개구(5)가 형성된다.
레지스트막 패턴(4)은 제1c도에 표시된 바와 같이 그후 제거되며 각각 티타늄(Ti), 구리(Cu)와 니켈(Ni)의 3층으로 구성되며 약 3㎛두께와 배리어 금속막(6)이 스퍼터링 프로세스에 의해 노출된 PSG막(3)과 전극(2)위에 형성된다.
그후 제1d도에 표시된 바와 같이 제2레지스트막이 배리어 금속막(6)위에 코팅되어 개구(5)보다 더 큰구멍을 갖는 제2레지스트막 패턴(7)이 개구(5)에 형성되도록 노출 및 현상된다. 그후 솔더(PbSn) 범프(8)가 개구(5)에 마스크로서 레지스트막 패턴(7)을 사용하는 도금방법에 의해 형성된다. 도금하는 동안 배리어 금속막(6)은 도금 도전층으로서 사용된다.
그후 제1e도에 표시된 바와 같이 레지스트막 패턴(7)과 노출 배리어 금속막(6)은 마스크로서 솔더 범프전극(8)을 사용하여 니켈과 구리를 제거하기 위해 질산과 인산의 혼합물을 사용하고 티타늄을 제거하기 위해 인산을 사용하는 습식에칭법에 의해 제거된다. 건식에칭을 할 경우 범프 전극이 쉽게 에칭되도록 하기때문에 습식에칭법이 사용된다. 계속하여 솔더 범프는 열처리에 의해 녹여 약 l50㎛직경의 반구형 범프(8)를 형성한다. 금(Au)범프는 상기한 프로세스와 유사한 방법에 의해 솔더범프 대신에 형성될 수 있다.
상기한 범프(8)를 형성하기 위한 방법에 있어서 배리어 금속막(6)은 전극(2)과 범프(8)사이에 삽입되어 범프(8)는 전극(2)과 작용을 하지 않는다. 또한 배리어 금속막(6)은 상기 설명과 같이 도금 도전층으로 사용된다.
마스크로서 솔더범프(8)를 사용하는 배리어 금속막(6)의 에칭에 있어서, 사이드 에칭은 제1d도에 표시된바와 같이 도금액의 흐름이 평탄하지 않으며 범프(8)와 배리어 금속막(6)에 의해 바테리가 형성된다. 이는범프(8)와 알루미늄 전극(2)사이의 접착성질을 악화시키며 범프(8)가 에칭된 배리어 금속막(6)으로부터 쉽게 떨어질 수 있다.
본 발명의 목적은 전극 또는 배선에 범프가 단단하게 접속된 반도체장치를 제조하기 위한 방법을 제공하는 것이다.
본 발명의 다른 목적은 신뢰성이 향상된 범프를 구비한 반도체장치를 제조하기 위한 방법을 제공하는 것이다.
본 발명에 따르면 그 위에 전극부가 구비되는 반도체 기판위에 절연층을 형성하고, 그것의 전표면에 걸쳐 배리어 금속층을 형성하며, 상기 전극부를 둘러 싸도록 상기 배리어 금속층에 홈을 형성하고, 상기 홈에 스토퍼를 매입하며, 전극부위에 위치된 배리어 금속층 위에 범프를 형성하고, 그리고 스토퍼 외측의 배리어 금속층을 제거하는 단계로 구성된 반도체장치를 제조하는 방법이 제공된다. 스토퍼는 따라서 외측 배리어 금속층의 제거동안 내측 배리어 금속층의 제거를 방지한다.
본 발명에 있어서는 범퍼 형성영역에 배리어 금속층의 기능을 얻기 위하여 배리어 금슥층의 적어도 일부를 제거함에 의해 홈이 형성된다. 배리어 금속층은 범프와 그 밑에 위치한 물질이 반응 하는 것을 방지하는데 사용된다. 약 1000Å두께의 Ti와 약 2㎛두께의 Cu 및 약 1000Å두께의 Ni의 3층이 배리어 금속층으로서 바람직하게 사용된다. 홈의 폭은 그것의 에칭방지 성질 및 요망되는 범프크기 등에 의해 결정된다. 홈의 폭은 스토퍼 재료의 폭을 결정하며 스토퍼 재료의 폭이 크면 스토퍼 기능을 증가시킨다. 그러나 만약 스토퍼의 폭이 너무 클 경우 스토퍼 물질을 도금하는 프로세스가 어렵게 된다.
제2a도에 표시된 구조는 종래 반도체장치를 제조하는 제1a 내지 1c도에 표시된 것과 동일한 단계에 의해 형성된다. 그후 본 발명에 따라 배리어 금속막(16)위에 제2레지스트막이 형성되며 패턴닝 처리를 하여 제2b도에 표시된 바와 같이 홈(18)을 갖는 제2레지스트 패턴(17)을 형성한다. 제2a 내지 2e도에 있어서 부재번호(11,12,13 및 15)는 각각 반도체기판, 알루미늄 전극, PSG막 및 개구를 표시한다. 홈(18)내측영역은 범프영역이며 그 위에 범프가 형성되며 이후에는 범프형성영역이라 부른다.
제3도에 표시된 바와 같이 홈(18)은 범프형성영역을 둘러싸아 범프형성영역내의 배리어 금속막(16b)이 홈(18)외부에 위치한 배리어 금속막(16a)에 전기적으로 접속되지 않도록 형성된다.
그후 제2c도에 표시된 바와 같이 전기도금 프로세스가 캐소드로서 배리어금속(16a)을 사용하여 수행되어, 예를 들어 홈(11)내에 금(Au)(20)이 매입된다. 전기도금의 제1단계에 있어서 금(20)의 전착은 배리어 금속(16a)의 끝에서부터 시작되어 확장되어 배리어금속(16b)에 도달하여 배리어금속(16b)이 배리어금속(16a)에 접속된다. 그후 홈(18)의 전단면을 포함하도록 도금이 진행 확장된다. 홈(18)의 폭은 약 5㎛가 바람직하다. 레지스트 패턴(17)이 그후 형성되어 범프형성영역을 제외한 영역이 마스크된다. 그후 제2d도에 표시된 바와 같이 버섯모양의 범프(14)가 배리어금속(16b) 및 금(20)위에 도금 프로세스에 의해 형성된다.
끝으로 제2e도에 표시된 바와 같이 에칭 프로세스에 의해 레지스트 패턴(14)과 배리어 금속(16a)을 제거한다. 배리어금속(16a)의 에칭동안 비록 범프(22)의 측면이 조금 에칭될지라도 범프(22)에 대한 계속된 에칭은 금(20)에 의해 정지된다. 즉, 금(20)은 스토퍼로서 작용한다.
제4a 내지 4C 및 제5도는 본 발명의 제2 및 제3실시예의 공정을 설명하는 단면도이고 제6도는 제4a도에 관한 개략 평면도이다. 제4a 내지 4c도에 표시된 제2실시예에서 배리어 금속층(16)의 일부는 배리어금속층(16)의 에칭동안 에칭되지 않아 결국 남아있는 배리어 금속층(16)이 전기통로로 사용될 수 있다.
제4a도에 표시된 바와 같이 배리어 금속층(16)은 Ti로 된 층(16c)과 Pd 또는 Ni/Cu로 된 층(16d)의 2층으로 형성된다.
레지스트 패턴(17)을 사용하여 홈이 형성될때 단지 Pd 또는 Ni/Cu층이 제거되며 Ti층은 남아 있는다. 그후 제4b도에 표시된 바와 같이 Au 또는 솔더로 된 스토퍼(24)가 홈(18)에 도금되며 제4c도에 표시된 바와 같이 범프(22)가 비마스크위치에 도금 프로세스에 의해 형성된다. 끝으로 레지스트 패턴(17) 및 노출 배리어 금속(16d 및 16c)이 에칭 프로세스에 의해 제거된다. 스토퍼(24)은 이 프로세스동안 내측 배리어금속(16)의 에칭을 방지한다.
제4b도에 표시된 프로세스는 생략될 수 있음을 유의하라. 즉, 제4a도에 표시된 바와 같이 홈(18)을 형성한 후 범프(22)는 Ti층(16c)에 의해 전기통로가 형성되므로 레지스트 패턴(17)을 마스크로서 사용하여 도금될 수 있다. 따라서 범프 금속이 배리어금속(16c)의 홈에 매입되머 이 매입된 금속은 스로퍼로서 작용한다.
제7a 내지 7d도는 본 발명의 제4실시예의 공정을 설명하는 단면도를 보여준다.
이 실시예에서는 제2b도에 표시된 홈(18)을 갗춘 구조를 형성한 후 레지스트막 패턴(17)을 제거한다. 그후 제7a도에 표시된 바와 같이 약 5㎛두께의 솔더막(25)이 증착 프로세스에 의해 전 표면위에 형성된다. 계속하여 제7b도에 표시된 바와 같이 레지스트 패턴막(26)이 알루미늄 전극(12)위에만 형성되며 솔더막(25)은 마스크로서 레지스트막 패턴(26)을 사용하여 에칭된다. 이 에칭 프로세스는 에틸렌디아민 테트라 아세틱 애시드, 과산화수소 및 암모니아의 혼합물을 사용하는 습식에칭에 의해 수행된다.
레지스트막 패턴(26)은 제7c도에 표시된 바와 같이 그후 제거되며 전표면에 걸쳐 레지스트가 형성되고 패턴닝되어 알루미늄 전극(12)위에만 개구(15)가 나타나도록 레지스트막 패턴(27)을 형성한다. 그후 약 100㎛의 두께가 얇은 솔더범프(28)을 도금에 의해 솔더막(25)위에 형성한다. 도금 프로세스에 있어서 배리어금속막(16)과 솔더막(25)이 전기도금을 위한 도전층으로 사용된다. 그후 레지스트막 패턴(27)은 제7d도에표시된 바와 같이 제거되며 노출 배리어 금속막(16)은 에칭에 의해 제거된다. 이러한 에칭동안 홈(18)내의 솔더막(25)은 스토퍼로서 작용한다. 끝으로 이러한 구조물은 400℃에서 가열되며 솔더범프(22)가 완료된다.
제9a 및 9b도는 본 발명의 제5실시예의 공정을 설명하는 단면도이다. 제9a 및 9b도에 표시된 제5실시예에 있어서는 범프도금이 2회 수행된다. 그후 제2b도에 표시된 바와 같이 홈이 형성된 후 레지스트막 패턴(17)이 제거된다. 그후 제9a도에 표시된 바와 같이 범프막(29)이 형성되고 패턴닝되어 레지스트(30)를 사용하여 범프막(29)이 알루미늄 전극(12)위에만 형성되게 한다. 범프막 재료로는 금이 사용될 수 있다. 범프막(29)의 두께는 범프막(29)이 후속된 범프도금 프로세스에 전기통로로서 사용될 경우는 매우 얇게 할 수도 있다.
그후 제9b도에 표시된 바와 같이 레지스트(30)가 제거되며 범프(31)가 도금된다. 이 도금에 있어서 전체범프막(29)이 캐소드가 되므로 범프(31)가 두껍게 형성된다.
제10a 내지 10b도는 본 발명의 제6실시예의 공정을 설명하는 단면도이다.
제2b도에 표시된 구조가 형성되고 그후 레지스트 페턴(32)이 형성되며 범프(31)가 제10a도에 표시된 바와 같이 도금된다. 배리어금속(16)의 외각단은 범프(31)의 다리(31a)로 둘러싸여진다. 그러므로 범프(31)의 다리(31a)가 제10b도에 표시된 바와 같이 배리어금속(32)의 에칭동안 약간 녹을 지라도 배리어금속(16)은 제10b도에 표시원 바와 같이 다리(31a)가 스토퍼로서 작용하기 때문에 에칭되지 않는다.
Claims (9)
- 전극부가 구비되는 반도체기판위에 절연층을 형성하고, 그것의 전표면에 걸쳐 배리어금속층을 형성하며, 상기 전극부를 둘러 싸도록 상기 배리어 금슥층에 홈을 형성하고, 상기 험에 스토퍼를 매입하며, 전극부위에 위치된 배리어 금속층 위에 범프를 형성하고, 그리고 스토퍼가 외측 배리어금속층의 제거동안 내측배리어 금속층의 제거를 방지하도륵 스토퍼 외측의 배리어금속층을 제거하는 단계로 구성되는 것을 특징으로 하는 반도체장치를 제조하는 방법.
- 제1항에 있어서, 상기 절연층은 포스포-실리케이트 유리 또는 이산화실리콘으로 이루어지는 것을 특징으로 하는 방법.
- 제1항에 있어서, 상기 전극부는 알루미늄으로 이루어지는 것을 특징으로 하는 방법.
- 제1항에 있어서, 상기 배리어금속층은 각각 티타늄, 구리 및 니켈의 3층으로 구성되는 것을 특징으로하는 방법,
- 제1항에 있어서, 상기 홈은 배리어금속층을 습식에칭함에 의해 형성되는 것을 특징으로 하는 방법.
- 제1항에 있어서, 상기 스토퍼는 상기 홈내에 금 또는 솔더를 단지 용융시킴에 의해 형성되는 것을 특징으로 하는 방법.
- 제1항에 있어서, 상기 스토퍼는 홈을 매입하는 동안 도금에 의해 배리어금속층위에 범프층을 형성하고, 그리고 홈 외측에 위치된 배리어금속층을 제거하는 단계에 의해 형성되는 것을 특징으로 하는 방법.
- 제1항에 있어서, 상기 스토퍼는 범프를 형성함에 의해 형성되고 상기 범프의 다리부는 스토퍼로서 작용하는 것을 특징으로 하는 방법.
- 제1항에 있어서, 상기 스토퍼는 도금 프로세스에 의해 형성되는 것을 특징으로 하는 방법.
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US7659192B2 (en) * | 2006-12-29 | 2010-02-09 | Intel Corporation | Methods of forming stepped bumps and structures formed thereby |
TW200836276A (en) * | 2007-02-16 | 2008-09-01 | Chipmos Technologies Inc | Conductive structure for a semiconductor integrated circuit and method for forming the same |
US7701049B2 (en) * | 2007-08-03 | 2010-04-20 | Stats Chippac Ltd. | Integrated circuit packaging system for fine pitch substrates |
US7713860B2 (en) * | 2007-10-13 | 2010-05-11 | Wan-Ling Yu | Method of forming metallic bump on I/O pad |
US8173536B2 (en) * | 2009-11-02 | 2012-05-08 | Stats Chippac, Ltd. | Semiconductor device and method of forming column interconnect structure to reduce wafer stress |
US8884432B2 (en) * | 2011-06-08 | 2014-11-11 | Tessera, Inc. | Substrate and assembly thereof with dielectric removal for increased post height |
US9859234B2 (en) | 2015-08-06 | 2018-01-02 | Invensas Corporation | Methods and structures to repair device warpage |
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3458925A (en) * | 1966-01-20 | 1969-08-05 | Ibm | Method of forming solder mounds on substrates |
US3462349A (en) * | 1966-09-19 | 1969-08-19 | Hughes Aircraft Co | Method of forming metal contacts on electrical components |
US3585713A (en) * | 1968-03-25 | 1971-06-22 | Sony Corp | Method of making connecting parts of semiconductor devices or the like |
DE1954499A1 (de) * | 1969-10-29 | 1971-05-06 | Siemens Ag | Verfahren zur Herstellung von Halbleiterschaltkreisen mit Leitbahnen |
GB1337283A (en) * | 1969-12-26 | 1973-11-14 | Hitachi Ltd | Method of manufacturing a semiconductor device |
DE2032872B2 (de) * | 1970-07-02 | 1975-03-20 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Verfahren zum Herstellen weichlötfähiger Kontakte zum Einbau von Halbleiterbauelementen in Gehäuse |
US3821785A (en) * | 1972-03-27 | 1974-06-28 | Signetics Corp | Semiconductor structure with bumps |
US4293637A (en) * | 1977-05-31 | 1981-10-06 | Matsushita Electric Industrial Co., Ltd. | Method of making metal electrode of semiconductor device |
JPS5633857A (en) * | 1979-08-28 | 1981-04-04 | Nec Corp | Semiconductor device |
US4514751A (en) * | 1982-12-23 | 1985-04-30 | International Business Machines Corporation | Compressively stresses titanium metallurgy for contacting passivated semiconductor devices |
JPS6032335A (ja) * | 1983-08-02 | 1985-02-19 | Nec Corp | 半導体装置 |
-
1987
- 1987-08-19 US US07/086,805 patent/US4742023A/en not_active Expired - Fee Related
- 1987-08-24 EP EP87307459A patent/EP0261799B1/en not_active Expired - Lifetime
- 1987-08-24 DE DE8787307459T patent/DE3777047D1/de not_active Expired - Fee Related
- 1987-08-27 KR KR1019870009416A patent/KR900006511B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
KR880003409A (ko) | 1988-05-17 |
US4742023A (en) | 1988-05-03 |
EP0261799A1 (en) | 1988-03-30 |
DE3777047D1 (de) | 1992-04-09 |
EP0261799B1 (en) | 1992-03-04 |
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