DE3670547D1 - Monolitische temperaturkompensierte spannungsreferenzdiode und verfahren zu ihrer herstellung. - Google Patents

Monolitische temperaturkompensierte spannungsreferenzdiode und verfahren zu ihrer herstellung.

Info

Publication number
DE3670547D1
DE3670547D1 DE8686107446T DE3670547T DE3670547D1 DE 3670547 D1 DE3670547 D1 DE 3670547D1 DE 8686107446 T DE8686107446 T DE 8686107446T DE 3670547 T DE3670547 T DE 3670547T DE 3670547 D1 DE3670547 D1 DE 3670547D1
Authority
DE
Germany
Prior art keywords
monolitical
production
voltage reference
temperature compensated
compensated voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8686107446T
Other languages
English (en)
Inventor
Bernard William Boland
Gandy, Jr
Kevin B Jackson
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Motorola Solutions Inc
Original Assignee
Motorola Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motorola Inc filed Critical Motorola Inc
Application granted granted Critical
Publication of DE3670547D1 publication Critical patent/DE3670547D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/866—Zener diodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Amplifiers (AREA)
  • Control Of Electrical Variables (AREA)
DE8686107446T 1985-08-06 1986-06-02 Monolitische temperaturkompensierte spannungsreferenzdiode und verfahren zu ihrer herstellung. Expired - Lifetime DE3670547D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/762,751 US4870467A (en) 1985-08-06 1985-08-06 Monolithic temperature compensated voltage-reference diode and method of its manufacture

Publications (1)

Publication Number Publication Date
DE3670547D1 true DE3670547D1 (de) 1990-05-23

Family

ID=25065942

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8686107446T Expired - Lifetime DE3670547D1 (de) 1985-08-06 1986-06-02 Monolitische temperaturkompensierte spannungsreferenzdiode und verfahren zu ihrer herstellung.

Country Status (4)

Country Link
US (1) US4870467A (de)
EP (1) EP0211174B1 (de)
JP (1) JPS6235580A (de)
DE (1) DE3670547D1 (de)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3841982A1 (de) * 1988-01-30 1989-08-10 Bosch Gmbh Robert Leistungs-zener-diode
US5017950A (en) * 1989-01-19 1991-05-21 Toko, Inc. Variable-capacitance diode element having wide capacitance variation range
DE3930697A1 (de) * 1989-09-14 1991-03-28 Bosch Gmbh Robert Steuerbare temperaturkompensierte spannungsbegrenzungseinrichtung
US5150176A (en) * 1992-02-13 1992-09-22 Motorola, Inc. PN junction surge suppressor structure with moat
US5756387A (en) * 1994-12-30 1998-05-26 Sgs-Thomson Microelectronics S.R.L. Method for forming zener diode with high time stability and low noise
US5701071A (en) * 1995-08-21 1997-12-23 Fujitsu Limited Systems for controlling power consumption in integrated circuits
FR2764138A1 (fr) * 1997-05-30 1998-12-04 Sgs Thomson Microelectronics Reference de tension dans un circuit integre
US6933237B2 (en) * 2002-06-21 2005-08-23 Hewlett-Packard Development Company, L.P. Substrate etch method and device
US7066887B2 (en) * 2003-10-21 2006-06-27 Vermon Bi-plane ultrasonic probe
KR100605581B1 (ko) * 2004-12-28 2006-07-31 주식회사 하이닉스반도체 콘택 저항의 온도 특성을 이용한 디지털 온도 감지기 및그를 사용한 셀프 리프레시 구동장치
FR2953062B1 (fr) * 2009-11-24 2011-12-16 St Microelectronics Tours Sas Diode de protection bidirectionnelle basse tension
US9147779B2 (en) * 2013-05-01 2015-09-29 The Boeing Company Solar cell by-pass diode with improved metal contacts

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3410735A (en) * 1965-10-22 1968-11-12 Motorola Inc Method of forming a temperature compensated reference diode
US3378915A (en) * 1966-03-31 1968-04-23 Northern Electric Co Method of making a planar diffused semiconductor voltage reference diode
US3519900A (en) * 1967-11-13 1970-07-07 Motorola Inc Temperature compensated reference diodes and methods for making same
US3497776A (en) * 1968-03-06 1970-02-24 Westinghouse Electric Corp Uniform avalanche-breakdown rectifiers
US3953254A (en) * 1972-11-07 1976-04-27 Thomson-Csf Method of producing temperature compensated reference diodes utilizing selective epitaxial growth
US3798510A (en) * 1973-02-21 1974-03-19 Us Army Temperature compensated zener diode for transient suppression
US4075649A (en) * 1975-11-25 1978-02-21 Siemens Corporation Single chip temperature compensated reference diode and method for making same
JPS5378788A (en) * 1976-12-23 1978-07-12 Hitachi Ltd Temperature-compensation-type constant voltage element
US4340900A (en) * 1979-06-19 1982-07-20 The United States Of America As Represented By The Secretary Of The Air Force Mesa epitaxial diode with oxide passivated junction and plated heat sink
US4349394A (en) * 1979-12-06 1982-09-14 Siemens Corporation Method of making a zener diode utilizing gas-phase epitaxial deposition
JPS5691478A (en) * 1979-12-26 1981-07-24 Hitachi Ltd Manufacture of punch-through type diode
JPS57148379A (en) * 1981-03-09 1982-09-13 Nec Corp Temperature compensating type constant voltage diode
FR2508703A1 (fr) * 1981-06-30 1982-12-31 Commissariat Energie Atomique Diode zener compensee en temperature et stable sous irradiation et procede de fabrication d'une telle diode
US4398142A (en) * 1981-10-09 1983-08-09 Harris Corporation Kelvin-connected buried zener voltage reference circuit
US4441114A (en) * 1981-12-22 1984-04-03 International Business Machines Corporation CMOS Subsurface breakdown zener diode
US4473941A (en) * 1982-12-22 1984-10-02 Ncr Corporation Method of fabricating zener diodes

Also Published As

Publication number Publication date
US4870467A (en) 1989-09-26
EP0211174A3 (en) 1988-01-27
EP0211174A2 (de) 1987-02-25
EP0211174B1 (de) 1990-04-18
JPS6235580A (ja) 1987-02-16

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee