DE3675811D1 - Elektrodenstruktur fuer halbleiteranordnung und verfahren zu ihrer herstellung. - Google Patents
Elektrodenstruktur fuer halbleiteranordnung und verfahren zu ihrer herstellung.Info
- Publication number
- DE3675811D1 DE3675811D1 DE8686200755T DE3675811T DE3675811D1 DE 3675811 D1 DE3675811 D1 DE 3675811D1 DE 8686200755 T DE8686200755 T DE 8686200755T DE 3675811 T DE3675811 T DE 3675811T DE 3675811 D1 DE3675811 D1 DE 3675811D1
- Authority
- DE
- Germany
- Prior art keywords
- production
- electrode structure
- semiconductor arrangement
- semiconductor
- arrangement
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76897—Formation of self-aligned vias or contact plugs, i.e. involving a lithographically uncritical step
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/7684—Smoothing; Planarisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42396—Gate electrodes for field effect devices for charge coupled devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66946—Charge transfer devices
- H01L29/66954—Charge transfer devices with an insulated gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Solid State Image Pick-Up Elements (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NL8501339A NL8501339A (nl) | 1985-05-10 | 1985-05-10 | Halfgeleiderinrichting en werkwijze ter vervaardiging daarvan. |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3675811D1 true DE3675811D1 (de) | 1991-01-10 |
Family
ID=19845961
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8686200755T Expired - Lifetime DE3675811D1 (de) | 1985-05-10 | 1986-05-02 | Elektrodenstruktur fuer halbleiteranordnung und verfahren zu ihrer herstellung. |
Country Status (6)
Country | Link |
---|---|
US (2) | US4754311A (de) |
EP (1) | EP0202704B1 (de) |
JP (1) | JPS61260656A (de) |
CA (1) | CA1243132A (de) |
DE (1) | DE3675811D1 (de) |
NL (1) | NL8501339A (de) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63202067A (ja) * | 1987-02-17 | 1988-08-22 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
US5194751A (en) * | 1989-07-17 | 1993-03-16 | Sony Corporation | Structure of solid-state image sensing devices |
US5017515A (en) * | 1989-10-02 | 1991-05-21 | Texas Instruments Incorporated | Process for minimizing lateral distance between elements in an integrated circuit by using sidewall spacers |
JP2971085B2 (ja) * | 1990-02-13 | 1999-11-02 | 沖電気工業株式会社 | 半導体装置の製造方法 |
KR920010433B1 (ko) * | 1990-07-10 | 1992-11-27 | 금성일렉트론 주식회사 | 자기정렬 방식에 의한 전하 촬상소자의 제조방법 |
NL9100094A (nl) * | 1991-01-21 | 1992-08-17 | Koninkl Philips Electronics Nv | Halfgeleiderinrichting en werkwijze ter vervaardiging van een dergelijke halfgeleiderinrichting. |
KR960015271B1 (ko) * | 1993-08-18 | 1996-11-07 | 엘지반도체 주식회사 | 전하전송장치의 제조방법 |
BE1007768A3 (nl) * | 1993-11-10 | 1995-10-17 | Philips Electronics Nv | Werkwijze ter vervaardiging van een halfgeleiderinrichting en halfgeleiderinrichting vervaardigd met een dergelijke werkwijze. |
US5460997A (en) * | 1995-01-23 | 1995-10-24 | Eastman Kodak Company | Method of making a confined planar charge coupled device with edge aligned implants and interconnected electrodes |
JP3150050B2 (ja) * | 1995-03-30 | 2001-03-26 | 日本電気株式会社 | 電荷結合装置およびその製造方法 |
US5719075A (en) * | 1995-07-31 | 1998-02-17 | Eastman Kodak Company | Method of making a planar charge coupled device with edge aligned implants and electrodes connected with overlying metal |
KR100215882B1 (ko) * | 1996-05-16 | 1999-08-16 | 구본준 | 고체촬상소자 제조방법 |
WO1998011608A1 (en) * | 1996-09-10 | 1998-03-19 | Philips Electronics N.V. | Charge coupled device, and method of manufacturing such a device |
US6174824B1 (en) | 1999-03-04 | 2001-01-16 | International Business Machines Corporation | Post-processing a completed semiconductor device |
JP2006013460A (ja) * | 2004-05-21 | 2006-01-12 | Fuji Film Microdevices Co Ltd | 固体撮像素子の製造方法および固体撮像素子 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4163239A (en) * | 1971-12-30 | 1979-07-31 | Texas Instruments Incorporated | Second level phase lines for CCD line imager |
JPS532696B2 (de) * | 1973-06-18 | 1978-01-31 | ||
US3931674A (en) * | 1974-02-08 | 1976-01-13 | Fairchild Camera And Instrument Corporation | Self aligned CCD element including two levels of electrodes and method of manufacture therefor |
US4053349A (en) * | 1976-02-02 | 1977-10-11 | Intel Corporation | Method for forming a narrow gap |
JPS606108B2 (ja) * | 1976-07-07 | 1985-02-15 | 株式会社東芝 | 半導体装置の製造方法 |
US4097886A (en) * | 1976-10-22 | 1978-06-27 | General Electric Company | Split electrode structure for semiconductor devices |
US4228445A (en) * | 1977-10-27 | 1980-10-14 | Texas Instruments Incorporated | Dual plane well-type two-phase ccd |
US4227202A (en) * | 1977-10-27 | 1980-10-07 | Texas Instruments Incorporated | Dual plane barrier-type two-phase CCD |
US4222165A (en) * | 1978-09-25 | 1980-09-16 | Emm Semi, Inc. | Two-phase continuous poly silicon gate CCD |
US4375652A (en) * | 1981-10-22 | 1983-03-01 | International Business Machines Corporation | High-speed time delay and integration solid state scanner |
JPS5994458A (ja) * | 1982-11-19 | 1984-05-31 | Fujitsu Ltd | 電荷転送装置 |
NL8400224A (nl) * | 1984-01-25 | 1985-08-16 | Philips Nv | Werkwijze ter vervaardiging van een halfgeleiderinrichting en inrichting vervaardigd door toepassing daarvan. |
NL8402223A (nl) * | 1984-07-13 | 1986-02-03 | Philips Nv | Werkwijze ter vervaardiging van een halfgeleiderinrichting en inrichting, vervaardigd door toepassing daarvan. |
US4658278A (en) * | 1985-04-15 | 1987-04-14 | Rca Corporation | High density charge-coupled device imager and method of making the same |
-
1985
- 1985-05-10 NL NL8501339A patent/NL8501339A/nl not_active Application Discontinuation
-
1986
- 1986-05-01 US US06/858,478 patent/US4754311A/en not_active Expired - Fee Related
- 1986-05-02 DE DE8686200755T patent/DE3675811D1/de not_active Expired - Lifetime
- 1986-05-02 EP EP86200755A patent/EP0202704B1/de not_active Expired
- 1986-05-08 CA CA000508665A patent/CA1243132A/en not_active Expired
- 1986-05-09 JP JP61105012A patent/JPS61260656A/ja active Pending
-
1987
- 1987-12-11 US US07/131,874 patent/US4766089A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
NL8501339A (nl) | 1986-12-01 |
EP0202704A1 (de) | 1986-11-26 |
JPS61260656A (ja) | 1986-11-18 |
US4754311A (en) | 1988-06-28 |
US4766089A (en) | 1988-08-23 |
EP0202704B1 (de) | 1990-11-28 |
CA1243132A (en) | 1988-10-11 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |