NL8501339A - Halfgeleiderinrichting en werkwijze ter vervaardiging daarvan. - Google Patents
Halfgeleiderinrichting en werkwijze ter vervaardiging daarvan. Download PDFInfo
- Publication number
- NL8501339A NL8501339A NL8501339A NL8501339A NL8501339A NL 8501339 A NL8501339 A NL 8501339A NL 8501339 A NL8501339 A NL 8501339A NL 8501339 A NL8501339 A NL 8501339A NL 8501339 A NL8501339 A NL 8501339A
- Authority
- NL
- Netherlands
- Prior art keywords
- electrodes
- layer
- silicon
- electrode
- contact windows
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims description 18
- 238000004519 manufacturing process Methods 0.000 title claims description 8
- 238000000034 method Methods 0.000 title claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 26
- 239000010703 silicon Substances 0.000 claims description 26
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 24
- 238000005530 etching Methods 0.000 claims description 16
- 229920002120 photoresistant polymer Polymers 0.000 claims description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 8
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 7
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 7
- 230000003647 oxidation Effects 0.000 claims description 5
- 238000007254 oxidation reaction Methods 0.000 claims description 5
- 238000001020 plasma etching Methods 0.000 claims description 3
- 150000003376 silicon Chemical class 0.000 claims description 2
- 230000000873 masking effect Effects 0.000 claims 1
- 239000002184 metal Substances 0.000 description 5
- 239000000463 material Substances 0.000 description 3
- 239000004922 lacquer Substances 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- JNCMHMUGTWEVOZ-UHFFFAOYSA-N F[CH]F Chemical compound F[CH]F JNCMHMUGTWEVOZ-UHFFFAOYSA-N 0.000 description 1
- 108010081348 HRT1 protein Hairy Proteins 0.000 description 1
- 102100021881 Hairy/enhancer-of-split related with YRPW motif protein 1 Human genes 0.000 description 1
- 241001414989 Thysanoptera Species 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 239000003973 paint Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76897—Formation of self-aligned vias or contact plugs, i.e. involving a lithographically uncritical step
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/7684—Smoothing; Planarisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42396—Gate electrodes for field effect devices for charge coupled devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66946—Charge transfer devices
- H01L29/66954—Charge transfer devices with an insulated gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Solid State Image Pick-Up Elements (AREA)
Priority Applications (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL8501339A NL8501339A (nl) | 1985-05-10 | 1985-05-10 | Halfgeleiderinrichting en werkwijze ter vervaardiging daarvan. |
| US06/858,478 US4754311A (en) | 1985-05-10 | 1986-05-01 | Semiconductor device with contacts to parallel electrode strips |
| DE8686200755T DE3675811D1 (de) | 1985-05-10 | 1986-05-02 | Elektrodenstruktur fuer halbleiteranordnung und verfahren zu ihrer herstellung. |
| EP86200755A EP0202704B1 (de) | 1985-05-10 | 1986-05-02 | Elektrodenstruktur für Halbleiteranordnung und Verfahren zu ihrer Herstellung |
| CA000508665A CA1243132A (en) | 1985-05-10 | 1986-05-08 | Semiconductor device electrode and contact structure |
| JP61105012A JPS61260656A (ja) | 1985-05-10 | 1986-05-09 | 半導体装置およびその製造方法 |
| US07/131,874 US4766089A (en) | 1985-05-10 | 1987-12-11 | Method of manufacturing a charge-coupled device |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL8501339 | 1985-05-10 | ||
| NL8501339A NL8501339A (nl) | 1985-05-10 | 1985-05-10 | Halfgeleiderinrichting en werkwijze ter vervaardiging daarvan. |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL8501339A true NL8501339A (nl) | 1986-12-01 |
Family
ID=19845961
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL8501339A NL8501339A (nl) | 1985-05-10 | 1985-05-10 | Halfgeleiderinrichting en werkwijze ter vervaardiging daarvan. |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US4754311A (de) |
| EP (1) | EP0202704B1 (de) |
| JP (1) | JPS61260656A (de) |
| CA (1) | CA1243132A (de) |
| DE (1) | DE3675811D1 (de) |
| NL (1) | NL8501339A (de) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63202067A (ja) * | 1987-02-17 | 1988-08-22 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
| US5194751A (en) * | 1989-07-17 | 1993-03-16 | Sony Corporation | Structure of solid-state image sensing devices |
| US5017515A (en) * | 1989-10-02 | 1991-05-21 | Texas Instruments Incorporated | Process for minimizing lateral distance between elements in an integrated circuit by using sidewall spacers |
| JP2971085B2 (ja) * | 1990-02-13 | 1999-11-02 | 沖電気工業株式会社 | 半導体装置の製造方法 |
| KR920010433B1 (ko) * | 1990-07-10 | 1992-11-27 | 금성일렉트론 주식회사 | 자기정렬 방식에 의한 전하 촬상소자의 제조방법 |
| NL9100094A (nl) * | 1991-01-21 | 1992-08-17 | Koninkl Philips Electronics Nv | Halfgeleiderinrichting en werkwijze ter vervaardiging van een dergelijke halfgeleiderinrichting. |
| KR960015271B1 (ko) * | 1993-08-18 | 1996-11-07 | 엘지반도체 주식회사 | 전하전송장치의 제조방법 |
| BE1007768A3 (nl) * | 1993-11-10 | 1995-10-17 | Philips Electronics Nv | Werkwijze ter vervaardiging van een halfgeleiderinrichting en halfgeleiderinrichting vervaardigd met een dergelijke werkwijze. |
| US5460997A (en) * | 1995-01-23 | 1995-10-24 | Eastman Kodak Company | Method of making a confined planar charge coupled device with edge aligned implants and interconnected electrodes |
| JP3150050B2 (ja) * | 1995-03-30 | 2001-03-26 | 日本電気株式会社 | 電荷結合装置およびその製造方法 |
| US5719075A (en) * | 1995-07-31 | 1998-02-17 | Eastman Kodak Company | Method of making a planar charge coupled device with edge aligned implants and electrodes connected with overlying metal |
| KR100215882B1 (ko) * | 1996-05-16 | 1999-08-16 | 구본준 | 고체촬상소자 제조방법 |
| KR19990067469A (ko) * | 1996-09-10 | 1999-08-16 | 요트.게.아. 롤페즈 | 전하 결합 소자 및 그 제조 방법 |
| US6174824B1 (en) | 1999-03-04 | 2001-01-16 | International Business Machines Corporation | Post-processing a completed semiconductor device |
| JP2006013460A (ja) * | 2004-05-21 | 2006-01-12 | Fuji Film Microdevices Co Ltd | 固体撮像素子の製造方法および固体撮像素子 |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4163239A (en) * | 1971-12-30 | 1979-07-31 | Texas Instruments Incorporated | Second level phase lines for CCD line imager |
| JPS532696B2 (de) * | 1973-06-18 | 1978-01-31 | ||
| US3931674A (en) * | 1974-02-08 | 1976-01-13 | Fairchild Camera And Instrument Corporation | Self aligned CCD element including two levels of electrodes and method of manufacture therefor |
| US4053349A (en) * | 1976-02-02 | 1977-10-11 | Intel Corporation | Method for forming a narrow gap |
| JPS606108B2 (ja) * | 1976-07-07 | 1985-02-15 | 株式会社東芝 | 半導体装置の製造方法 |
| US4097886A (en) * | 1976-10-22 | 1978-06-27 | General Electric Company | Split electrode structure for semiconductor devices |
| US4227202A (en) * | 1977-10-27 | 1980-10-07 | Texas Instruments Incorporated | Dual plane barrier-type two-phase CCD |
| US4228445A (en) * | 1977-10-27 | 1980-10-14 | Texas Instruments Incorporated | Dual plane well-type two-phase ccd |
| US4222165A (en) * | 1978-09-25 | 1980-09-16 | Emm Semi, Inc. | Two-phase continuous poly silicon gate CCD |
| US4375652A (en) * | 1981-10-22 | 1983-03-01 | International Business Machines Corporation | High-speed time delay and integration solid state scanner |
| JPS5994458A (ja) * | 1982-11-19 | 1984-05-31 | Fujitsu Ltd | 電荷転送装置 |
| NL8400224A (nl) * | 1984-01-25 | 1985-08-16 | Philips Nv | Werkwijze ter vervaardiging van een halfgeleiderinrichting en inrichting vervaardigd door toepassing daarvan. |
| NL8402223A (nl) * | 1984-07-13 | 1986-02-03 | Philips Nv | Werkwijze ter vervaardiging van een halfgeleiderinrichting en inrichting, vervaardigd door toepassing daarvan. |
| US4658278A (en) * | 1985-04-15 | 1987-04-14 | Rca Corporation | High density charge-coupled device imager and method of making the same |
-
1985
- 1985-05-10 NL NL8501339A patent/NL8501339A/nl not_active Application Discontinuation
-
1986
- 1986-05-01 US US06/858,478 patent/US4754311A/en not_active Expired - Fee Related
- 1986-05-02 EP EP86200755A patent/EP0202704B1/de not_active Expired
- 1986-05-02 DE DE8686200755T patent/DE3675811D1/de not_active Expired - Lifetime
- 1986-05-08 CA CA000508665A patent/CA1243132A/en not_active Expired
- 1986-05-09 JP JP61105012A patent/JPS61260656A/ja active Pending
-
1987
- 1987-12-11 US US07/131,874 patent/US4766089A/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| EP0202704A1 (de) | 1986-11-26 |
| EP0202704B1 (de) | 1990-11-28 |
| US4766089A (en) | 1988-08-23 |
| US4754311A (en) | 1988-06-28 |
| JPS61260656A (ja) | 1986-11-18 |
| DE3675811D1 (de) | 1991-01-10 |
| CA1243132A (en) | 1988-10-11 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| NL8501339A (nl) | Halfgeleiderinrichting en werkwijze ter vervaardiging daarvan. | |
| CN100576543C (zh) | 电容器装置制造方法及电容器装置 | |
| NL8105559A (nl) | Werkwijze voor het aanbrengen van een smalle groef in een substraatgebied, in het bijzonder een halfgeleidersubstraatgebied. | |
| US3908262A (en) | Process for the production of a two-phase charge shift arrangement for charge coupled devices | |
| EP0644594A1 (de) | Speiseleitungen-Anordnung einer Halbleitervorrichtung | |
| CN1159250A (zh) | 具有固定桁条的集成电路触点 | |
| US5668412A (en) | Capacitor of a semiconductor device | |
| EP0137554B1 (de) | Verfahren zur Herstellung einer Halbleiteranordnung und nach diesem Verfahren hergestellte Halbleiteranordnung | |
| NL8400224A (nl) | Werkwijze ter vervaardiging van een halfgeleiderinrichting en inrichting vervaardigd door toepassing daarvan. | |
| EP0171105B1 (de) | Verfahren zur Herstellung einer Halbleiteranordnung | |
| NL8701032A (nl) | Werkwijze voor het vervaardigen van een halfgeleiderinrichting met interconnecties die zowel boven een halfgeleidergebied als boven een daaraan grenzend isolatiegebied liggen. | |
| KR920007785B1 (ko) | 이미지 센서장치 및 그 제조방법 | |
| US4677737A (en) | Self aligned zero overlap charge coupled device | |
| JPH05315588A (ja) | 固体撮像装置およびその製造方法 | |
| KR19980040650A (ko) | 반도체메모리 장치의 커패시터 제조방법 | |
| JP3319456B2 (ja) | 固体撮像装置及びその製造方法 | |
| JP2006019485A (ja) | 半導体装置とその製造方法 | |
| US4695922A (en) | Constant ratio, size insensitive, capacitor structure | |
| NL1009899C2 (nl) | Fabricagewerkwijze met gebruikmaking van duaal damasceringsproces. | |
| JPS60160666A (ja) | 半導体装置の製造方法 | |
| JPH02283039A (ja) | 電荷転送装置と電荷転送装置の製造方法 | |
| JPS62156857A (ja) | メモリ素子を含む半導体装置の製造方法 | |
| KR19990051847A (ko) | 캐패시터 및 그의 제조방법 | |
| JPH0529584A (ja) | 読み出し専用半導体メモリ | |
| KR19990007030A (ko) | 스텝 둘레에 배선 우회로를 구비한 반도체 장치 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A1B | A search report has been drawn up | ||
| BV | The patent application has lapsed |