GB2236119B - Platinum diffusion process - Google Patents

Platinum diffusion process

Info

Publication number
GB2236119B
GB2236119B GB9018319A GB9018319A GB2236119B GB 2236119 B GB2236119 B GB 2236119B GB 9018319 A GB9018319 A GB 9018319A GB 9018319 A GB9018319 A GB 9018319A GB 2236119 B GB2236119 B GB 2236119B
Authority
GB
United Kingdom
Prior art keywords
diffusion process
platinum diffusion
platinum
diffusion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB9018319A
Other languages
English (en)
Other versions
GB2236119A (en
GB9018319D0 (en
Inventor
Herbert J Gould
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Infineon Technologies Americas Corp
Original Assignee
International Rectifier Corp USA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Rectifier Corp USA filed Critical International Rectifier Corp USA
Publication of GB9018319D0 publication Critical patent/GB9018319D0/en
Publication of GB2236119A publication Critical patent/GB2236119A/en
Priority to GB9309619A priority Critical patent/GB2265636B/en
Application granted granted Critical
Publication of GB2236119B publication Critical patent/GB2236119B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/221—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities of killers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/904—Charge carrier lifetime control

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Weting (AREA)
  • Superconductors And Manufacturing Methods Therefor (AREA)
  • Manufacture And Refinement Of Metals (AREA)
  • Inert Electrodes (AREA)
GB9018319A 1989-09-21 1990-08-21 Platinum diffusion process Expired - Fee Related GB2236119B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB9309619A GB2265636B (en) 1989-09-21 1993-05-10 Platinum diffusion process

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/410,323 US4925812A (en) 1989-09-21 1989-09-21 Platinum diffusion process

Publications (3)

Publication Number Publication Date
GB9018319D0 GB9018319D0 (en) 1990-10-03
GB2236119A GB2236119A (en) 1991-03-27
GB2236119B true GB2236119B (en) 1994-05-25

Family

ID=23624227

Family Applications (1)

Application Number Title Priority Date Filing Date
GB9018319A Expired - Fee Related GB2236119B (en) 1989-09-21 1990-08-21 Platinum diffusion process

Country Status (6)

Country Link
US (1) US4925812A (enExample)
JP (1) JP2728147B2 (enExample)
AT (1) AT398014B (enExample)
DE (1) DE4029826A1 (enExample)
GB (1) GB2236119B (enExample)
IT (1) IT1246685B (enExample)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5262336A (en) * 1986-03-21 1993-11-16 Advanced Power Technology, Inc. IGBT process to produce platinum lifetime control
JP2752184B2 (ja) * 1989-09-11 1998-05-18 株式会社東芝 電力用半導体装置
IT1247293B (it) * 1990-05-09 1994-12-12 Int Rectifier Corp Dispositivo transistore di potenza presentante una regione ultra-profonda, a maggior concentrazione
IT1244119B (it) * 1990-11-29 1994-07-05 Cons Ric Microelettronica Processo di introduzione e diffusione di ioni di platino in una fetta di silicio
TW232751B (en) * 1992-10-09 1994-10-21 Semiconductor Energy Res Co Ltd Semiconductor device and method for forming the same
US6624477B1 (en) 1992-10-09 2003-09-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
CN1095204C (zh) * 1993-03-12 2002-11-27 株式会社半导体能源研究所 半导体器件和晶体管
JP3637069B2 (ja) 1993-03-12 2005-04-06 株式会社半導体エネルギー研究所 半導体装置の作製方法
US5635426A (en) * 1993-08-26 1997-06-03 Fujitsu Limited Method of making a semiconductor device having a silicide local interconnect
EP0675527B1 (en) * 1994-03-30 1999-11-10 Consorzio per la Ricerca sulla Microelettronica nel Mezzogiorno Manufacturing process for obtaining bipolar transistors with controlled storage time
US6426248B2 (en) * 2000-02-15 2002-07-30 International Rectifier Corporation Process for forming power MOSFET device in float zone, non-epitaxial silicon
US6358825B1 (en) 2000-11-21 2002-03-19 Fairchild Semiconductor Corporation Process for controlling lifetime in a P-I-N diode and for forming diode with improved lifetime control
US20020195613A1 (en) * 2001-04-02 2002-12-26 International Rectifier Corp. Low cost fast recovery diode and process of its manufacture
WO2003088280A1 (en) * 2002-04-08 2003-10-23 Council Of Scientific And Industrial Research Process for the production of neodymium-iron-boron permanent magnet alloy powder
US7749877B2 (en) * 2006-03-07 2010-07-06 Siliconix Technology C. V. Process for forming Schottky rectifier with PtNi silicide Schottky barrier
DE102007020039B4 (de) * 2007-04-27 2011-07-14 Infineon Technologies Austria Ag Verfahren zur Herstellung einer vertikal inhomogenen Platin- oder Goldverteilung in einem Halbleitersubstrat und in einem Halbleiterbauelement, derart hergestelltes Halbleitersubstrat und Halbleiterbauelement
DE112015000206T5 (de) * 2014-10-03 2016-08-25 Fuji Electric Co., Ltd. Halbleitervorrichtung und Verfahren zum Herstellen einer Halbleitervorrichtung
CN109671625A (zh) * 2017-10-13 2019-04-23 华润微电子（重庆）有限公司 快恢复二极管的制备方法
CN112002761A (zh) * 2020-09-07 2020-11-27 深圳市美浦森半导体有限公司 一种集成frd的dmos器件的制造方法及dmos器件

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3640783A (en) * 1969-08-11 1972-02-08 Trw Semiconductors Inc Semiconductor devices with diffused platinum
US3728592A (en) * 1969-05-09 1973-04-17 Ibm Semiconductor structure having reduced carrier lifetime
US3963523A (en) * 1973-04-26 1976-06-15 Matsushita Electronics Corporation Method of manufacturing semiconductor devices
GB2022318A (en) * 1978-06-02 1979-12-12 Int Rectifier Corp Schottky device and method of manufacture
EP0053712A1 (en) * 1980-12-08 1982-06-16 International Business Machines Corporation Method of improving the conductivity of a microelectronic conductive tungsten silicide film and semiconductor device comprising said film
US4398344A (en) * 1982-03-08 1983-08-16 International Rectifier Corporation Method of manufacture of a schottky using platinum encapsulated between layers of palladium sintered into silicon surface
EP0165547A2 (en) * 1984-06-21 1985-12-27 International Business Machines Corporation A method of forming a shallow doped region in a semiconductor substrate
US4791074A (en) * 1986-08-29 1988-12-13 Kabushiki Kaisha Toshiba Method of manufacturing a semiconductor apparatus

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2735769C3 (de) * 1977-08-09 1980-03-27 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Verfahren zur Einstellung der Minoritätsladungsträgerlebensdauer in Halbleiterbauelementen aus einkristallinem Silizium
JPS54106178A (en) * 1978-02-08 1979-08-20 Mitsubishi Electric Corp Thyristor and its manufacture
JPS5939898B2 (ja) * 1978-09-26 1984-09-27 三菱電機株式会社 半導体装置の製造方法
JPS5553462A (en) * 1978-10-13 1980-04-18 Int Rectifier Corp Mosfet element
US4593302B1 (en) * 1980-08-18 1998-02-03 Int Rectifier Corp Process for manufacture of high power mosfet laterally distributed high carrier density beneath the gate oxide
JPS6084881A (ja) * 1983-10-17 1985-05-14 Toshiba Corp 大電力ｍｏｓ　ｆｅｔとその製造方法
US4855799A (en) * 1987-12-22 1989-08-08 Kabushiki Kaisha Toshiba Power MOS FET with carrier lifetime killer

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3728592A (en) * 1969-05-09 1973-04-17 Ibm Semiconductor structure having reduced carrier lifetime
US3640783A (en) * 1969-08-11 1972-02-08 Trw Semiconductors Inc Semiconductor devices with diffused platinum
US3963523A (en) * 1973-04-26 1976-06-15 Matsushita Electronics Corporation Method of manufacturing semiconductor devices
GB2022318A (en) * 1978-06-02 1979-12-12 Int Rectifier Corp Schottky device and method of manufacture
EP0053712A1 (en) * 1980-12-08 1982-06-16 International Business Machines Corporation Method of improving the conductivity of a microelectronic conductive tungsten silicide film and semiconductor device comprising said film
US4398344A (en) * 1982-03-08 1983-08-16 International Rectifier Corporation Method of manufacture of a schottky using platinum encapsulated between layers of palladium sintered into silicon surface
EP0165547A2 (en) * 1984-06-21 1985-12-27 International Business Machines Corporation A method of forming a shallow doped region in a semiconductor substrate
US4791074A (en) * 1986-08-29 1988-12-13 Kabushiki Kaisha Toshiba Method of manufacturing a semiconductor apparatus

Also Published As

Publication number Publication date
JP2728147B2 (ja) 1998-03-18
GB2236119A (en) 1991-03-27
IT1246685B (it) 1994-11-25
DE4029826A1 (de) 1991-04-04
ATA192490A (de) 1993-12-15
DE4029826C2 (enExample) 1993-09-09
IT9021494A0 (it) 1990-09-17
AT398014B (de) 1994-08-25
GB9018319D0 (en) 1990-10-03
US4925812A (en) 1990-05-15
JPH03138926A (ja) 1991-06-13
IT9021494A1 (it) 1992-03-17

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 19950821