DE3942419A1 - Halbleitervorrichtung - Google Patents

Halbleitervorrichtung

Info

Publication number
DE3942419A1
DE3942419A1 DE3942419A DE3942419A DE3942419A1 DE 3942419 A1 DE3942419 A1 DE 3942419A1 DE 3942419 A DE3942419 A DE 3942419A DE 3942419 A DE3942419 A DE 3942419A DE 3942419 A1 DE3942419 A1 DE 3942419A1
Authority
DE
Germany
Prior art keywords
zone
junction
field plate
region
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DE3942419A
Other languages
German (de)
English (en)
Other versions
DE3942419C2 (https=
Inventor
Masato Kashima
Kazuhiro Tsuchiya
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Original Assignee
Fuji Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Co Ltd filed Critical Fuji Electric Co Ltd
Publication of DE3942419A1 publication Critical patent/DE3942419A1/de
Application granted granted Critical
Publication of DE3942419C2 publication Critical patent/DE3942419C2/de
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H10D64/115—Resistive field plates, e.g. semi-insulating field plates

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
DE3942419A 1988-12-22 1989-12-21 Halbleitervorrichtung Granted DE3942419A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63324330A JPH02170469A (ja) 1988-12-22 1988-12-22 半導体装置

Publications (2)

Publication Number Publication Date
DE3942419A1 true DE3942419A1 (de) 1990-06-28
DE3942419C2 DE3942419C2 (https=) 1992-09-03

Family

ID=18164582

Family Applications (1)

Application Number Title Priority Date Filing Date
DE3942419A Granted DE3942419A1 (de) 1988-12-22 1989-12-21 Halbleitervorrichtung

Country Status (2)

Country Link
JP (1) JPH02170469A (https=)
DE (1) DE3942419A1 (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0755072A1 (de) * 1995-07-20 1997-01-22 Siemens Aktiengesellschaft CMOS-Schaltung mit Feldplatte und Verfahren zur Herstellung
CN109103259A (zh) * 2018-08-21 2018-12-28 电子科技大学 一种积累型dmos器件

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5732763B2 (ja) * 2010-07-20 2015-06-10 大日本印刷株式会社 Ｅｓｄ保護素子を備える半導体装置およびｅｓｄ保護素子を備える半導体装置の製造方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1348750A (en) * 1971-06-23 1974-03-20 Rca Corp Semiconductor devices having stable high-voltage junctions
US4430663A (en) * 1981-03-25 1984-02-07 Bell Telephone Laboratories, Incorporated Prevention of surface channels in silicon semiconductor devices
EP0255968A2 (en) * 1986-08-08 1988-02-17 SILICONIX Incorporated High sheet resistance polycrystalline silicone film for increasing diode breakdown voltage
DE3145231C2 (https=) * 1980-11-17 1994-08-11 International Rectifier Corp., Los Angeles, Calif., Us

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61129868A (ja) * 1984-11-29 1986-06-17 Toshiba Corp 半導体装置
JPS62183177A (ja) * 1986-02-06 1987-08-11 Nec Corp 半導体装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1348750A (en) * 1971-06-23 1974-03-20 Rca Corp Semiconductor devices having stable high-voltage junctions
DE3145231C2 (https=) * 1980-11-17 1994-08-11 International Rectifier Corp., Los Angeles, Calif., Us
US4430663A (en) * 1981-03-25 1984-02-07 Bell Telephone Laboratories, Incorporated Prevention of surface channels in silicon semiconductor devices
EP0255968A2 (en) * 1986-08-08 1988-02-17 SILICONIX Incorporated High sheet resistance polycrystalline silicone film for increasing diode breakdown voltage

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0755072A1 (de) * 1995-07-20 1997-01-22 Siemens Aktiengesellschaft CMOS-Schaltung mit Feldplatte und Verfahren zur Herstellung
CN109103259A (zh) * 2018-08-21 2018-12-28 电子科技大学 一种积累型dmos器件

Also Published As

Publication number Publication date
JPH02170469A (ja) 1990-07-02
DE3942419C2 (https=) 1992-09-03

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Legal Events

Date Code Title Description
OP8 Request for examination as to paragraph 44 patent law
D2 Grant after examination
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee