GB1348750A - Semiconductor devices having stable high-voltage junctions - Google Patents
Semiconductor devices having stable high-voltage junctionsInfo
- Publication number
- GB1348750A GB1348750A GB2815772A GB2815772A GB1348750A GB 1348750 A GB1348750 A GB 1348750A GB 2815772 A GB2815772 A GB 2815772A GB 2815772 A GB2815772 A GB 2815772A GB 1348750 A GB1348750 A GB 1348750A
- Authority
- GB
- United Kingdom
- Prior art keywords
- semiconductor devices
- stable high
- voltage junctions
- junctions
- voltage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3157—Partial encapsulation or coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/60—Protection against electrostatic charges or discharges, e.g. Faraday shields
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/64—Impedance arrangements
- H01L23/647—Resistive arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3025—Electromagnetic shielding
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Thyristors (AREA)
- Bipolar Transistors (AREA)
- Semiconductor Integrated Circuits (AREA)
- Bipolar Integrated Circuits (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US15583271A | 1971-06-23 | 1971-06-23 |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1348750A true GB1348750A (en) | 1974-03-20 |
Family
ID=22556970
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB2815772A Expired GB1348750A (en) | 1971-06-23 | 1972-06-15 | Semiconductor devices having stable high-voltage junctions |
Country Status (15)
Country | Link |
---|---|
JP (1) | JPS5126789B1 (en) |
AU (1) | AU464764B2 (en) |
BE (1) | BE785286A (en) |
BR (1) | BR7203959D0 (en) |
CA (1) | CA984059A (en) |
DD (1) | DD97096A5 (en) |
DE (1) | DE2229605A1 (en) |
ES (1) | ES403881A1 (en) |
FR (1) | FR2143097B1 (en) |
GB (1) | GB1348750A (en) |
HU (1) | HU166762B (en) |
IT (1) | IT951158B (en) |
NL (1) | NL7208569A (en) |
PL (1) | PL83293B1 (en) |
SE (1) | SE378708B (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3942419A1 (en) * | 1988-12-22 | 1990-06-28 | Fuji Electric Co Ltd | Semiconductor substrate having P-region and N-region - in which field electrode is formed on oxide film and overlaps both sides of junction |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2047461A (en) * | 1979-04-19 | 1980-11-26 | Philips Electronic Associated | Semiconductor device |
US4388635A (en) * | 1979-07-02 | 1983-06-14 | Hitachi, Ltd. | High breakdown voltage semiconductor device |
FR2633141B1 (en) * | 1988-06-17 | 1992-02-14 | Sgs Thomson Microelectronics | CHIP CARD WITH PROTECTION SCREEN |
DE102009043598A1 (en) * | 2009-09-25 | 2011-04-21 | Siemens Aktiengesellschaft | Method for controlling an inverter and arrangement for controlling an inverter |
-
1972
- 1972-04-01 IT IT2278872A patent/IT951158B/en active
- 1972-05-18 CA CA142,528A patent/CA984059A/en not_active Expired
- 1972-06-08 PL PL15588472A patent/PL83293B1/pl unknown
- 1972-06-08 DD DD16355272A patent/DD97096A5/xx unknown
- 1972-06-09 AU AU43284/72A patent/AU464764B2/en not_active Expired
- 1972-06-15 GB GB2815772A patent/GB1348750A/en not_active Expired
- 1972-06-15 ES ES403881A patent/ES403881A1/en not_active Expired
- 1972-06-19 DE DE19722229605 patent/DE2229605A1/en active Pending
- 1972-06-19 HU HURA000571 patent/HU166762B/hu unknown
- 1972-06-19 BR BR395972A patent/BR7203959D0/en unknown
- 1972-06-20 FR FR7222143A patent/FR2143097B1/fr not_active Expired
- 1972-06-21 SE SE821372A patent/SE378708B/xx unknown
- 1972-06-22 NL NL7208569A patent/NL7208569A/xx unknown
- 1972-06-22 BE BE785286A patent/BE785286A/en unknown
- 1972-06-22 JP JP6277972A patent/JPS5126789B1/ja active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3942419A1 (en) * | 1988-12-22 | 1990-06-28 | Fuji Electric Co Ltd | Semiconductor substrate having P-region and N-region - in which field electrode is formed on oxide film and overlaps both sides of junction |
Also Published As
Publication number | Publication date |
---|---|
BE785286A (en) | 1972-10-16 |
FR2143097A1 (en) | 1973-02-02 |
SE378708B (en) | 1975-09-08 |
DE2229605A1 (en) | 1972-12-28 |
HU166762B (en) | 1975-05-28 |
ES403881A1 (en) | 1975-05-01 |
DD97096A5 (en) | 1973-04-12 |
PL83293B1 (en) | 1975-12-31 |
AU464764B2 (en) | 1975-08-21 |
JPS5126789B1 (en) | 1976-08-09 |
CA984059A (en) | 1976-02-17 |
NL7208569A (en) | 1972-12-28 |
FR2143097B1 (en) | 1977-12-23 |
BR7203959D0 (en) | 1973-08-09 |
IT951158B (en) | 1973-06-30 |
AU4328472A (en) | 1973-12-13 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PS | Patent sealed | ||
PCNP | Patent ceased through non-payment of renewal fee |