JPH02170469A - 半導体装置 - Google Patents

半導体装置

Info

Publication number
JPH02170469A
JPH02170469A JP63324330A JP32433088A JPH02170469A JP H02170469 A JPH02170469 A JP H02170469A JP 63324330 A JP63324330 A JP 63324330A JP 32433088 A JP32433088 A JP 32433088A JP H02170469 A JPH02170469 A JP H02170469A
Authority
JP
Japan
Prior art keywords
layer
junction
field plate
film
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP63324330A
Other languages
English (en)
Japanese (ja)
Inventor
Masahito Kashima
鹿島　雅人
Kazuhiro Tsuchiya
和広 土屋
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Original Assignee
Fuji Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Co Ltd filed Critical Fuji Electric Co Ltd
Priority to JP63324330A priority Critical patent/JPH02170469A/ja
Priority to DE3942419A priority patent/DE3942419A1/de
Publication of JPH02170469A publication Critical patent/JPH02170469A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H10D64/115—Resistive field plates, e.g. semi-insulating field plates

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
JP63324330A 1988-12-22 1988-12-22 半導体装置 Pending JPH02170469A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP63324330A JPH02170469A (ja) 1988-12-22 1988-12-22 半導体装置
DE3942419A DE3942419A1 (de) 1988-12-22 1989-12-21 Halbleitervorrichtung

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63324330A JPH02170469A (ja) 1988-12-22 1988-12-22 半導体装置

Publications (1)

Publication Number Publication Date
JPH02170469A true JPH02170469A (ja) 1990-07-02

Family

ID=18164582

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63324330A Pending JPH02170469A (ja) 1988-12-22 1988-12-22 半導体装置

Country Status (2)

Country Link
JP (1) JPH02170469A (https=)
DE (1) DE3942419A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012028386A (ja) * 2010-07-20 2012-02-09 Dainippon Printing Co Ltd Ｅｓｄ保護素子を備える半導体装置およびｅｓｄ保護素子を備える半導体装置の製造方法

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19526568C1 (de) * 1995-07-20 1997-01-30 Siemens Ag Integrierter Schaltkreis mit CMOS-Schaltung und Verfahren zur Herstellung von isolierten, aktiven Bereichen einer CMOS-Schaltung
CN109103259A (zh) * 2018-08-21 2018-12-28 电子科技大学 一种积累型dmos器件

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61129868A (ja) * 1984-11-29 1986-06-17 Toshiba Corp 半導体装置
JPS62183177A (ja) * 1986-02-06 1987-08-11 Nec Corp 半導体装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT951158B (it) * 1971-06-23 1973-06-30 Rca Corp Dispositivo semiconduttore presen tante giunzioni stabili per alte tensioni
US4412242A (en) * 1980-11-17 1983-10-25 International Rectifier Corporation Planar structure for high voltage semiconductor devices with gaps in glassy layer over high field regions
US4430663A (en) * 1981-03-25 1984-02-07 Bell Telephone Laboratories, Incorporated Prevention of surface channels in silicon semiconductor devices
EP0255968A3 (en) * 1986-08-08 1988-08-10 SILICONIX Incorporated High sheet resistance polycrystalline silicone film for increasing diode breakdown voltage

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61129868A (ja) * 1984-11-29 1986-06-17 Toshiba Corp 半導体装置
JPS62183177A (ja) * 1986-02-06 1987-08-11 Nec Corp 半導体装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012028386A (ja) * 2010-07-20 2012-02-09 Dainippon Printing Co Ltd Ｅｓｄ保護素子を備える半導体装置およびｅｓｄ保護素子を備える半導体装置の製造方法

Also Published As

Publication number Publication date
DE3942419A1 (de) 1990-06-28
DE3942419C2 (https=) 1992-09-03

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