IT951158B - Dispositivo semiconduttore presen tante giunzioni stabili per alte tensioni - Google Patents

Dispositivo semiconduttore presen tante giunzioni stabili per alte tensioni

Info

Publication number
IT951158B
IT951158B IT2278872A IT2278872A IT951158B IT 951158 B IT951158 B IT 951158B IT 2278872 A IT2278872 A IT 2278872A IT 2278872 A IT2278872 A IT 2278872A IT 951158 B IT951158 B IT 951158B
Authority
IT
Italy
Prior art keywords
high voltages
semiconductive device
many stable
junctions
stable junctions
Prior art date
Application number
IT2278872A
Other languages
English (en)
Original Assignee
Rca Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rca Corp filed Critical Rca Corp
Application granted granted Critical
Publication of IT951158B publication Critical patent/IT951158B/it

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3157Partial encapsulation or coating
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/58Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/60Protection against electrostatic charges or discharges, e.g. Faraday shields
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/58Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/64Impedance arrangements
    • H01L23/647Resistive arrangements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30Technical effects
    • H01L2924/301Electrical effects
    • H01L2924/3025Electromagnetic shielding

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Thyristors (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)
IT2278872A 1971-06-23 1972-04-01 Dispositivo semiconduttore presen tante giunzioni stabili per alte tensioni IT951158B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US15583271A 1971-06-23 1971-06-23

Publications (1)

Publication Number Publication Date
IT951158B true IT951158B (it) 1973-06-30

Family

ID=22556970

Family Applications (1)

Application Number Title Priority Date Filing Date
IT2278872A IT951158B (it) 1971-06-23 1972-04-01 Dispositivo semiconduttore presen tante giunzioni stabili per alte tensioni

Country Status (15)

Country Link
JP (1) JPS5126789B1 (it)
AU (1) AU464764B2 (it)
BE (1) BE785286A (it)
BR (1) BR7203959D0 (it)
CA (1) CA984059A (it)
DD (1) DD97096A5 (it)
DE (1) DE2229605A1 (it)
ES (1) ES403881A1 (it)
FR (1) FR2143097B1 (it)
GB (1) GB1348750A (it)
HU (1) HU166762B (it)
IT (1) IT951158B (it)
NL (1) NL7208569A (it)
PL (1) PL83293B1 (it)
SE (1) SE378708B (it)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2047461A (en) * 1979-04-19 1980-11-26 Philips Electronic Associated Semiconductor device
US4388635A (en) * 1979-07-02 1983-06-14 Hitachi, Ltd. High breakdown voltage semiconductor device
FR2633141B1 (fr) * 1988-06-17 1992-02-14 Sgs Thomson Microelectronics Carte a puce avec ecran de protection
JPH02170469A (ja) * 1988-12-22 1990-07-02 Fuji Electric Co Ltd 半導体装置
DE102009043598A1 (de) * 2009-09-25 2011-04-21 Siemens Aktiengesellschaft Verfahren zum Regeln eines Umrichters und Anordnung zur Regelung eines Umrichters

Also Published As

Publication number Publication date
AU464764B2 (en) 1975-08-21
CA984059A (en) 1976-02-17
AU4328472A (en) 1973-12-13
BE785286A (fr) 1972-10-16
DE2229605A1 (de) 1972-12-28
DD97096A5 (it) 1973-04-12
NL7208569A (it) 1972-12-28
JPS5126789B1 (it) 1976-08-09
GB1348750A (en) 1974-03-20
FR2143097B1 (it) 1977-12-23
ES403881A1 (es) 1975-05-01
FR2143097A1 (it) 1973-02-02
SE378708B (it) 1975-09-08
PL83293B1 (it) 1975-12-31
BR7203959D0 (pt) 1973-08-09
HU166762B (it) 1975-05-28

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