IT1012612B - Dispositivo semiconduttore con elevata tensione di rottur - Google Patents

Dispositivo semiconduttore con elevata tensione di rottur

Info

Publication number
IT1012612B
IT1012612B IT22911/74A IT2291174A IT1012612B IT 1012612 B IT1012612 B IT 1012612B IT 22911/74 A IT22911/74 A IT 22911/74A IT 2291174 A IT2291174 A IT 2291174A IT 1012612 B IT1012612 B IT 1012612B
Authority
IT
Italy
Prior art keywords
semiconductor device
high breakage
breakage voltage
voltage
semiconductor
Prior art date
Application number
IT22911/74A
Other languages
English (en)
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Application granted granted Critical
Publication of IT1012612B publication Critical patent/IT1012612B/it

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/408—Electrodes ; Multistep manufacturing processes therefor with an insulating layer with a particular dielectric or electrostatic property, e.g. with static charges or for controlling trapped charges or moving ions, or with a plate acting on the insulator potential or the insulator charges, e.g. for controlling charges effect or potential distribution in the insulating layer, or with a semi-insulating layer contacting directly the semiconductor surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
    • H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
    • H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
    • H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/043—Dual dielectric
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/118—Oxide films
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/122—Polycrystalline
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/125—Polycrystalline passivation

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)
IT22911/74A 1973-05-19 1974-05-17 Dispositivo semiconduttore con elevata tensione di rottur IT1012612B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP48055965A JPS523277B2 (it) 1973-05-19 1973-05-19

Publications (1)

Publication Number Publication Date
IT1012612B true IT1012612B (it) 1977-03-10

Family

ID=13013779

Family Applications (1)

Application Number Title Priority Date Filing Date
IT22911/74A IT1012612B (it) 1973-05-19 1974-05-17 Dispositivo semiconduttore con elevata tensione di rottur

Country Status (8)

Country Link
US (1) US3971061A (it)
JP (1) JPS523277B2 (it)
CA (1) CA999683A (it)
DE (1) DE2424222A1 (it)
FR (1) FR2230081B1 (it)
GB (1) GB1450494A (it)
IT (1) IT1012612B (it)
NL (1) NL7406776A (it)

Families Citing this family (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4176372A (en) * 1974-03-30 1979-11-27 Sony Corporation Semiconductor device having oxygen doped polycrystalline passivation layer
JPS5534582B2 (it) * 1974-06-24 1980-09-08
JPS5193874A (en) * 1975-02-15 1976-08-17 Handotaisochino seizohoho
JPS51128268A (en) * 1975-04-30 1976-11-09 Sony Corp Semiconductor unit
FR2335951A1 (fr) * 1975-12-19 1977-07-15 Radiotechnique Compelec Dispositif semiconducteur a surface passivee et procede d'obtention de la structure de passivation
SU793421A3 (ru) * 1976-06-02 1980-12-30 Ббц Аг Браун Фототиристор
CH594989A5 (it) * 1976-09-03 1978-01-31 Bbc Brown Boveri & Cie
JPS53134884A (en) * 1977-04-30 1978-11-24 Toyoda Gosei Kk Method for making elastic ring
US4194934A (en) * 1977-05-23 1980-03-25 Varo Semiconductor, Inc. Method of passivating a semiconductor device utilizing dual polycrystalline layers
US4134125A (en) * 1977-07-20 1979-01-09 Bell Telephone Laboratories, Incorporated Passivation of metallized semiconductor substrates
US4742384A (en) * 1978-02-01 1988-05-03 Rca Corporation Structure for passivating a PN junction
US4473597A (en) * 1978-02-01 1984-09-25 Rca Corporation Method and structure for passivating a PN junction
US4374389A (en) * 1978-06-06 1983-02-15 General Electric Company High breakdown voltage semiconductor device
US4242690A (en) * 1978-06-06 1980-12-30 General Electric Company High breakdown voltage semiconductor device
JPS5551541A (en) * 1978-10-06 1980-04-15 Takagi Kakoushiyo:Kk Method for manufacturing rhombic belt and apparatus therefor
DE2846637A1 (de) * 1978-10-11 1980-04-30 Bbc Brown Boveri & Cie Halbleiterbauelement mit mindestens einem planaren pn-uebergang und zonen- guard-ringen
US4199384A (en) * 1979-01-29 1980-04-22 Rca Corporation Method of making a planar semiconductor on insulating substrate device utilizing the deposition of a dual dielectric layer between device islands
FR2450505A1 (fr) * 1979-03-02 1980-09-26 Thomson Csf Dispositif semiconducteur, comportant un anneau de garde diffuse et son procede de fabrication
JPS6011815B2 (ja) * 1979-07-09 1985-03-28 三菱電機株式会社 サイリスタ
JPS5658262A (en) * 1979-10-18 1981-05-21 Toshiba Corp Semiconductor device
US4297149A (en) * 1980-05-05 1981-10-27 Rca Corporation Method of treating SiPOS passivated high voltage semiconductor device
US4344985A (en) * 1981-03-27 1982-08-17 Rca Corporation Method of passivating a semiconductor device with a multi-layer passivant system by thermally growing a layer of oxide on an oxygen doped polycrystalline silicon layer
JPS5976466A (ja) * 1982-10-25 1984-05-01 Mitsubishi Electric Corp プレ−ナ形半導体装置
GB2131603B (en) * 1982-12-03 1985-12-18 Philips Electronic Associated Semiconductor devices
GB2134705B (en) * 1983-01-28 1985-12-24 Philips Electronic Associated Semiconductor devices
NL8401983A (nl) * 1984-06-22 1986-01-16 Philips Nv Halfgeleiderinrichting met verhoogde doorslagspanning.
US4605948A (en) * 1984-08-02 1986-08-12 Rca Corporation Semiconductor structure for electric field distribution
GB2167229B (en) * 1984-11-21 1988-07-20 Philips Electronic Associated Semiconductor devices
JPS61222172A (ja) * 1985-03-15 1986-10-02 Sharp Corp Ｍｏｓｆｅｔのゲ−ト絶縁膜形成方法
FR2581252B1 (fr) * 1985-04-26 1988-06-10 Radiotechnique Compelec Composant semiconducteur du type planar a structure d'anneaux de garde, famille de tels composants et procede de realisation
JPS6276673A (ja) * 1985-09-30 1987-04-08 Toshiba Corp 高耐圧半導体装置
EP0360036B1 (de) * 1988-09-20 1994-06-01 Siemens Aktiengesellschaft Planarer pn-Übergang hoher Spannungsfestigkeit
JPH11204304A (ja) * 1998-01-08 1999-07-30 Matsushita Electric Ind Co Ltd 抵抗器およびその製造方法
GB2354879B (en) * 1999-08-11 2004-05-12 Mitel Semiconductor Ltd A semiconductor device
KR100462878B1 (ko) * 2002-03-22 2004-12-17 삼성전자주식회사 길이가 긴 부하저항을 구비한 반도체 장치 및 그의 제조방법
US9812454B2 (en) * 2016-02-08 2017-11-07 Kilopass Technology, Inc. Methods and systems for reducing electrical disturb effects between thyristor memory cells using buried metal cathode lines

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1294558B (de) * 1961-06-07 1969-05-08 Westinghouse Electric Corp Hochspannungsgleichrichter und Verfahren zum Herstellen
US3391287A (en) * 1965-07-30 1968-07-02 Westinghouse Electric Corp Guard junctions for p-nu junction semiconductor devices
US3710204A (en) * 1967-05-20 1973-01-09 Telefunken Patent A semiconductor device having a screen electrode of intrinsic semiconductor material
DE1789043A1 (de) * 1967-10-14 1972-01-05 Sgs Sa Mit Schutzringen versehene Planar-Halbleitervorrichtungen
US3911473A (en) * 1968-10-12 1975-10-07 Philips Corp Improved surface breakdown protection for semiconductor devices
US3738880A (en) * 1971-06-23 1973-06-12 Rca Corp Method of making a semiconductor device

Also Published As

Publication number Publication date
FR2230081A1 (it) 1974-12-13
NL7406776A (it) 1974-11-21
GB1450494A (en) 1976-09-22
JPS523277B2 (it) 1977-01-27
US3971061A (en) 1976-07-20
CA999683A (en) 1976-11-09
DE2424222A1 (de) 1974-12-05
JPS508478A (it) 1975-01-28
FR2230081B1 (it) 1977-10-07

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