IT1015298B - Dispositivo semiconduttore - Google Patents

Dispositivo semiconduttore

Info

Publication number
IT1015298B
IT1015298B IT24278/74A IT2427874A IT1015298B IT 1015298 B IT1015298 B IT 1015298B IT 24278/74 A IT24278/74 A IT 24278/74A IT 2427874 A IT2427874 A IT 2427874A IT 1015298 B IT1015298 B IT 1015298B
Authority
IT
Italy
Prior art keywords
semiconductor device
semiconductor
Prior art date
Application number
IT24278/74A
Other languages
English (en)
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Application granted granted Critical
Publication of IT1015298B publication Critical patent/IT1015298B/it

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/47—Schottky barrier electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)
IT24278/74A 1973-06-26 1974-06-21 Dispositivo semiconduttore IT1015298B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB3017973A GB1459231A (en) 1973-06-26 1973-06-26 Semiconductor devices

Publications (1)

Publication Number Publication Date
IT1015298B true IT1015298B (it) 1977-05-10

Family

ID=10303529

Family Applications (1)

Application Number Title Priority Date Filing Date
IT24278/74A IT1015298B (it) 1973-06-26 1974-06-21 Dispositivo semiconduttore

Country Status (9)

Country Link
US (1) US3943552A (it)
JP (1) JPS5223217B2 (it)
CA (1) CA1003576A (it)
CH (1) CH574167A5 (it)
DE (1) DE2429705C3 (it)
FR (1) FR2235492B1 (it)
GB (1) GB1459231A (it)
IT (1) IT1015298B (it)
NL (1) NL163904C (it)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4917311A (it) * 1972-06-12 1974-02-15
US4064620A (en) * 1976-01-27 1977-12-27 Hughes Aircraft Company Ion implantation process for fabricating high frequency avalanche devices
GB1573309A (en) * 1976-03-24 1980-08-20 Mullard Ltd Semiconductor devices and their manufacture
JPS55145103A (en) * 1979-04-25 1980-11-12 Sumitomo Electric Ind Ltd Powder hot forging method
US4313971A (en) * 1979-05-29 1982-02-02 Rca Corporation Method of fabricating a Schottky barrier contact
DE2950644C2 (de) * 1979-12-15 1985-12-12 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Schottky-Diode
US4350413A (en) * 1980-04-14 1982-09-21 The United States Of America As Represented By The Secretary Of The Navy Multi-color tunable filter
JPS5732680A (en) * 1980-08-05 1982-02-22 Mitsubishi Electric Corp Manufacture of schottky barrier diode
US4394673A (en) * 1980-09-29 1983-07-19 International Business Machines Corporation Rare earth silicide Schottky barriers
GB2090053B (en) * 1980-12-19 1984-09-19 Philips Electronic Associated Mesfet
US4405934A (en) * 1981-04-13 1983-09-20 Texas Instruments Incorporated NPM Anti-saturation clamp for NPN logic gate transistor
JPS57178354A (en) * 1981-04-27 1982-11-02 Hitachi Ltd Semiconductor device
US4783688A (en) * 1981-12-02 1988-11-08 U.S. Philips Corporation Schottky barrier field effect transistors
US4471367A (en) * 1981-12-04 1984-09-11 At&T Bell Laboratories MESFET Using a shallow junction gate structure on GaInAs
US4492434A (en) * 1982-01-07 1985-01-08 The United States Of America As Represented By The Secretary Of The Navy Multi-color tunable semiconductor device
US4665414A (en) * 1982-07-23 1987-05-12 American Telephone And Telegraph Company, At&T Bell Laboratories Schottky-barrier MOS devices
JPS59135779A (ja) * 1983-01-24 1984-08-04 Mitsubishi Electric Corp 赤外線検出器
JPS60162701A (ja) * 1984-02-01 1985-08-24 Toyota Motor Corp 焼結鍛造品の製造方法
US4587096A (en) * 1985-05-23 1986-05-06 Inco Alloys International, Inc. Canless method for hot working gas atomized powders
US4742017A (en) * 1986-06-20 1988-05-03 Ford Aerospace Corporation Implantation method for forming Schottky barrier photodiodes
GB9907021D0 (en) 1999-03-27 1999-05-19 Koninkl Philips Electronics Nv Switch circuit and semiconductor switch for battery-powered equipment
US20050098843A1 (en) * 2002-12-01 2005-05-12 Igor Touzov Addressable active materials and technology applications
GB0401579D0 (en) * 2004-01-24 2004-02-25 Koninkl Philips Electronics Nv Transistor manufacture
US7772063B2 (en) * 2004-08-11 2010-08-10 Identifi Technologies, Inc. Reduced-step CMOS processes for low-cost radio frequency identification devices
EP1641029A1 (en) * 2004-09-27 2006-03-29 STMicroelectronics S.r.l. Process for manufacturing a Schottky contact on a semiconductor substrate
JP2006318956A (ja) * 2005-05-10 2006-11-24 Sumitomo Electric Ind Ltd ショットキーダイオードを有する半導体装置
JP2011119606A (ja) * 2009-12-07 2011-06-16 Sen Corp 半導体装置の製造方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3560809A (en) * 1968-03-04 1971-02-02 Hitachi Ltd Variable capacitance rectifying junction diode
US3550260A (en) * 1968-12-26 1970-12-29 Motorola Inc Method for making a hot carrier pn-diode
US3897275A (en) * 1969-05-22 1975-07-29 Texas Instruments Inc Process for fabricating schottky barrier phototransistor
BE759057A (it) * 1969-11-19 1971-05-17 Philips Nv
US3706128A (en) * 1970-06-30 1972-12-19 Varian Associates Surface barrier diode having a hypersensitive n region forming a hypersensitive voltage variable capacitor
US3634738A (en) * 1970-10-06 1972-01-11 Kev Electronics Corp Diode having a voltage variable capacitance characteristic and method of making same
DE2104752B2 (de) * 1971-02-02 1975-02-20 Philips Patentverwaltung Gmbh, 2000 Hamburg Verfahren zum Herstellen einer Halbleiter-Kapazitätsdiode
US3719797A (en) * 1971-12-16 1973-03-06 Bell Telephone Labor Inc Solid state temperature sensor employing a pair of dissimilar schottky-barrier diodes

Also Published As

Publication number Publication date
FR2235492A1 (it) 1975-01-24
US3943552A (en) 1976-03-09
JPS5034484A (it) 1975-04-02
CA1003576A (en) 1977-01-11
CH574167A5 (it) 1976-03-31
GB1459231A (en) 1976-12-22
NL7408438A (it) 1974-12-30
DE2429705C3 (de) 1981-01-29
DE2429705B2 (de) 1980-05-22
FR2235492B1 (it) 1979-01-05
NL163904B (nl) 1980-05-16
DE2429705A1 (de) 1975-01-16
NL163904C (nl) 1980-10-15
JPS5223217B2 (it) 1977-06-22

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