JP2011119606A - 半導体装置の製造方法 - Google Patents
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 71
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 23
- 239000012535 impurity Substances 0.000 claims abstract description 100
- 239000000758 substrate Substances 0.000 claims abstract description 82
- 238000005468 ion implantation Methods 0.000 claims abstract description 54
- 239000010409 thin film Substances 0.000 claims abstract description 53
- 238000000034 method Methods 0.000 claims abstract description 46
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 31
- 239000010408 film Substances 0.000 claims abstract description 30
- 239000000370 acceptor Substances 0.000 claims abstract description 5
- 238000002513 implantation Methods 0.000 claims description 37
- 150000002500 ions Chemical class 0.000 claims description 26
- 238000000151 deposition Methods 0.000 claims description 16
- 230000000694 effects Effects 0.000 claims description 16
- 238000009832 plasma treatment Methods 0.000 claims description 14
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 claims description 10
- 230000008021 deposition Effects 0.000 claims description 10
- 229910052785 arsenic Inorganic materials 0.000 claims description 9
- 229910052796 boron Inorganic materials 0.000 claims description 7
- 229910000073 phosphorus hydride Inorganic materials 0.000 claims description 7
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 claims description 6
- 229910052698 phosphorus Inorganic materials 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 5
- 229910052787 antimony Inorganic materials 0.000 claims description 4
- 229910052732 germanium Inorganic materials 0.000 claims description 4
- 229910052738 indium Inorganic materials 0.000 claims description 4
- 229910052724 xenon Inorganic materials 0.000 claims description 4
- 229910052786 argon Inorganic materials 0.000 claims description 3
- 229910000070 arsenic hydride Inorganic materials 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 27
- 239000010703 silicon Substances 0.000 abstract description 27
- 238000010884 ion-beam technique Methods 0.000 description 13
- 238000009792 diffusion process Methods 0.000 description 10
- 239000002245 particle Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- 239000007924 injection Substances 0.000 description 5
- 239000007787 solid Substances 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- 238000002347 injection Methods 0.000 description 4
- 238000000137 annealing Methods 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 230000001154 acute effect Effects 0.000 description 1
- -1 atom ions Chemical class 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005224 laser annealing Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- SBEQWOXEGHQIMW-UHFFFAOYSA-N silicon Chemical compound [Si].[Si] SBEQWOXEGHQIMW-UHFFFAOYSA-N 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
- H01L21/26526—Recoil-implantation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
- H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26586—Bombardment with radiation with high-energy radiation producing ion implantation characterised by the angle between the ion beam and the crystal planes or the main crystal surface
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66787—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel
- H01L29/66795—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
- H01L29/66803—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET with a step of doping the vertical sidewall, e.g. using tilted or multi-angled implants
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Abstract
【解決手段】 半導体基板としてのシリコン基板11の表面上に加工により突出部を形成した該シリコン基板の内部においてドナーもしくはアクセプターとなる不純物原子を含む不純物薄膜を、堆積膜13としてシリコン基板の表面上に堆積する工程と、前記突出部における前記堆積膜の斜め上方からイオン注入を行なうとともに、該イオン注入によって、前記不純物原子を堆積膜内部からシリコン基板の前記突出部の表面内部にリコイルさせる工程と、を含む半導体装置の製造方法。
【選択図】 図2
Description
以上のように本発明の実施形態によれば、プラズマによる堆積薄膜とイオン注入によるリコイル(ノッキングオン効果)作用により、通常の1/10以下の低ドーズ量でもって半導体基板内に1E15cm-2程度のBイオンあるいはPイオンを浅く導入することができる。つまり低ドーズでもって高濃度の不純物原子を半導体基板内に導入することができるドーピング方法を実現できる。特に立体的構造物の壁の領域にノッキングオン効果でイオンを導入することができる。
1’、11 シリコン基板
2、12 不純物を含むプラズマ
3、13 堆積膜
4、14 イオンビーム
5、15 不純物拡散層
6、16 マスク
Claims (14)
- 半導体装置の基体となる半導体基板の表面上に加工により凹凸部分を形成した該半導体基板の内部においてドナーもしくはアクセプターとなる不純物原子を含む不純物薄膜を、半導体基板の表面上に堆積する工程、
前記凹凸部分の前記堆積させた不純物薄膜の斜め上方からイオン注入を行なうとともに、該イオン注入によって、前記不純物原子を不純物薄膜内部から半導体基板の前記凹凸部分の表面内部にリコイルさせる工程、
を含むことを特徴とする半導体装置の製造方法。 - 前記不純物薄膜の、膜厚、不純物堆積物質種の設定調整、前記イオン注入の、注入イオン種、注入角度、注入エネルギー、注入ドーズ量の設定調整により、リコイル条件、注入ドーズ量相当のドーズ原子量をコントロールするよう構成したことを特徴とする請求項1に記載の半導体装置の製造方法。
- 前記不純物薄膜の不純物原子をB,P,Asのいずれか1つとすることを特徴とする請求項1に記載の半導体装置の製造方法。
- 前記不純物薄膜として、ジボランB2H6、あるいはBF3を含むガスによるプラズマ処理によって、Bを含む不純物薄膜を堆積することを特徴とする請求項1に記載の半導体装置の製造方法。
- 前記不純物薄膜として、フォスフィンPH3を含むガスによるプラズマ処理によって、Pを含む不純物薄膜を堆積することを特徴とする請求項1に記載の半導体装置の製造方法。
- 前記不純物薄膜として、アルシンAsH3を含むガスによるプラズマ処理によって、Asを含む不純物薄膜を堆積することを特徴とする請求項1に記載の半導体装置の製造方法。
- イオン注入工程において、注入イオンを、前記不純物薄膜の不純物原子であるB,P,Asのいずれかよりも原子量の大きい、重い原子のイオンとすることを特徴とする請求項1に記載の半導体装置の製造方法。
- イオン注入工程において、注入イオンを、Si、As、Ge、In、Sb若しくはXe、Arのいずれかとすることを特徴とする請求項1に記載の半導体装置の製造方法。
- 半導体基板の前記凹凸部分の表面に対する前記イオン注入の斜め上方からのビーム入射角度を実質上20°以下の小傾斜角度とすることを特徴とする請求項2に記載の半導体装置の製造方法。
- 半導体基板の前記凹凸部分の表面部分において、前記不純物薄膜内から前記半導体基板内に、前記不純物薄膜の不純物原子を、表面と略直交する方向(略垂直な方向)において、注入イオンによる不純物原子への衝突たたき込みノッキングオン効果により表面内部にリコイルさせることを特徴とする請求項1に記載の半導体装置の製造方法。
- 前記イオン注入を5keV以下の低エネルギー注入とすることを特徴とする請求項2に記載の半導体装置の製造方法。
- 前記イオン注入を2E15cm-2以下の低ドーズ注入原子量とすることを特徴とする請求項2に記載の半導体装置の製造方法。
- 前記半導体基板表面上であって前記凹凸部分以外の表面上の平面の部分に、前記不純物薄膜を厚く堆積することを特徴とする請求項1に記載の半導体装置の製造方法。
- 前記プラズマ処理によって堆積する不純物薄膜の基板平面での堆積レートは大きく、前記凹凸部分側面での堆積レートが前記基板平面より遅くなるようにすることにより前記基板平面に厚く不純物薄膜を堆積することを特徴とする請求項4〜6のいずれか1項に記載の半導体装置の製造方法。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009277828A JP2011119606A (ja) | 2009-12-07 | 2009-12-07 | 半導体装置の製造方法 |
EP10193728A EP2330614A3 (en) | 2009-12-07 | 2010-12-03 | Manufacturing method of semiconductor device |
SG2010089977A SG172554A1 (en) | 2009-12-07 | 2010-12-06 | Manufacturing method of semiconductor device |
TW099142360A TWI527091B (zh) | 2009-12-07 | 2010-12-06 | 半導體裝置之製造方法 |
KR1020100123942A KR101704041B1 (ko) | 2009-12-07 | 2010-12-07 | 반도체장치의 제조방법 |
US12/962,035 US8163635B2 (en) | 2009-12-07 | 2010-12-07 | Manufacturing method of semiconductor device |
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JP2009277828A JP2011119606A (ja) | 2009-12-07 | 2009-12-07 | 半導体装置の製造方法 |
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US (1) | US8163635B2 (ja) |
EP (1) | EP2330614A3 (ja) |
JP (1) | JP2011119606A (ja) |
KR (1) | KR101704041B1 (ja) |
SG (1) | SG172554A1 (ja) |
TW (1) | TWI527091B (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012049286A (ja) * | 2010-08-26 | 2012-03-08 | Sen Corp | 半導体装置の製造方法 |
JP2013051306A (ja) * | 2011-08-31 | 2013-03-14 | Nissin Ion Equipment Co Ltd | イオン注入方法 |
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Publication number | Priority date | Publication date | Assignee | Title |
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JP2011119606A (ja) | 2009-12-07 | 2011-06-16 | Sen Corp | 半導体装置の製造方法 |
US9385050B2 (en) * | 2011-01-06 | 2016-07-05 | Globalfoundries Inc. | Structure and method to fabricate resistor on finFET processes |
US9425063B2 (en) * | 2014-06-19 | 2016-08-23 | Infineon Technologies Ag | Method of reducing an impurity concentration in a semiconductor body, method of manufacturing a semiconductor device and semiconductor device |
US10535522B1 (en) * | 2018-08-21 | 2020-01-14 | Varian Semiconductor Equipment Associates, Inc. | Angular control of ion beam for vertical surface treatment |
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- 2010-12-03 EP EP10193728A patent/EP2330614A3/en not_active Withdrawn
- 2010-12-06 TW TW099142360A patent/TWI527091B/zh not_active IP Right Cessation
- 2010-12-06 SG SG2010089977A patent/SG172554A1/en unknown
- 2010-12-07 KR KR1020100123942A patent/KR101704041B1/ko active IP Right Grant
- 2010-12-07 US US12/962,035 patent/US8163635B2/en not_active Expired - Fee Related
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JP2012049286A (ja) * | 2010-08-26 | 2012-03-08 | Sen Corp | 半導体装置の製造方法 |
US9023720B2 (en) | 2010-08-26 | 2015-05-05 | Sen Corporation | Manufacturing method of semiconductor device |
JP2013051306A (ja) * | 2011-08-31 | 2013-03-14 | Nissin Ion Equipment Co Ltd | イオン注入方法 |
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SG172554A1 (en) | 2011-07-28 |
US20110136329A1 (en) | 2011-06-09 |
TW201137949A (en) | 2011-11-01 |
EP2330614A3 (en) | 2011-12-28 |
EP2330614A2 (en) | 2011-06-08 |
TWI527091B (zh) | 2016-03-21 |
KR101704041B1 (ko) | 2017-02-07 |
KR20110065376A (ko) | 2011-06-15 |
US8163635B2 (en) | 2012-04-24 |
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