IT1015296B - Dispositivo semiconduttore - Google Patents
Dispositivo semiconduttoreInfo
- Publication number
- IT1015296B IT1015296B IT24276/74A IT2427674A IT1015296B IT 1015296 B IT1015296 B IT 1015296B IT 24276/74 A IT24276/74 A IT 24276/74A IT 2427674 A IT2427674 A IT 2427674A IT 1015296 B IT1015296 B IT 1015296B
- Authority
- IT
- Italy
- Prior art keywords
- semiconductor device
- semiconductor
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
- H10D84/131—Thyristors having built-in components
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
- H10D84/121—BJTs having built-in components
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W20/00—Interconnections in chips, wafers or substrates
- H10W20/20—Interconnections within wafers or substrates, e.g. through-silicon vias [TSV]
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP48070069A JPS5019380A (it) | 1973-06-21 | 1973-06-21 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| IT1015296B true IT1015296B (it) | 1977-05-10 |
Family
ID=13420867
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IT24276/74A IT1015296B (it) | 1973-06-21 | 1974-06-21 | Dispositivo semiconduttore |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US3979766A (it) |
| JP (1) | JPS5019380A (it) |
| CA (1) | CA998779A (it) |
| DE (1) | DE2429876A1 (it) |
| FR (1) | FR2234662A1 (it) |
| GB (1) | GB1475320A (it) |
| IT (1) | IT1015296B (it) |
| NL (1) | NL7408431A (it) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS51107780A (en) * | 1975-03-18 | 1976-09-24 | Mitsubishi Electric Corp | Handotaisochi |
| US4355322A (en) * | 1978-12-22 | 1982-10-19 | Spellman Gordon B | Integrated gate turn-off device having a vertical power transistor forming a regenerative loop with a lateral transistor |
| US4213067A (en) * | 1978-12-22 | 1980-07-15 | Eaton Corporation | Integrated gate turn-off device with non-regenerative power portion and lateral regenerative portion having split emission path |
| US4398205A (en) * | 1978-12-22 | 1983-08-09 | Eaton Corporation | Gate turn-off device with high turn-off gain |
| US4268846A (en) * | 1978-12-22 | 1981-05-19 | Eaton Corporation | Integrated gate turn-off device with lateral regenerative portion and vertical non-regenerative power portion |
| JPS5833874A (ja) * | 1981-08-25 | 1983-02-28 | Nippon Telegr & Teleph Corp <Ntt> | 負性抵抗素子 |
| US4623910A (en) | 1982-09-24 | 1986-11-18 | Risberg Robert L | Semiconductor device |
| GB2241827B (en) * | 1990-02-23 | 1994-01-26 | Matsushita Electric Works Ltd | Method for manufacturing optically triggered lateral thyristor |
| FR2726398B1 (fr) * | 1994-10-28 | 1997-01-17 | Sgs Thomson Microelectronics | Thyristor commandable par des niveaux logiques |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3379940A (en) * | 1964-02-11 | 1968-04-23 | Nippon Electric Co | Integrated symmetrical conduction device |
| US3309537A (en) * | 1964-11-27 | 1967-03-14 | Honeywell Inc | Multiple stage semiconductor circuits and integrated circuit stages |
| US3475666A (en) * | 1966-08-15 | 1969-10-28 | Jearld L Hutson | Integrated semiconductor switch system |
| US3822409A (en) * | 1971-06-01 | 1974-07-02 | Matsushita Electric Works Ltd | Photosensitive solid oscillator |
-
1973
- 1973-06-21 JP JP48070069A patent/JPS5019380A/ja active Pending
-
1974
- 1974-06-18 GB GB2699474A patent/GB1475320A/en not_active Expired
- 1974-06-19 US US05/480,748 patent/US3979766A/en not_active Expired - Lifetime
- 1974-06-21 DE DE2429876A patent/DE2429876A1/de not_active Withdrawn
- 1974-06-21 FR FR7421699A patent/FR2234662A1/fr not_active Withdrawn
- 1974-06-21 NL NL7408431A patent/NL7408431A/xx not_active Application Discontinuation
- 1974-06-21 IT IT24276/74A patent/IT1015296B/it active
- 1974-06-21 CA CA203,071A patent/CA998779A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| US3979766A (en) | 1976-09-07 |
| GB1475320A (en) | 1977-06-01 |
| CA998779A (en) | 1976-10-19 |
| DE2429876A1 (de) | 1975-01-30 |
| FR2234662A1 (it) | 1975-01-17 |
| JPS5019380A (it) | 1975-02-28 |
| NL7408431A (it) | 1974-12-24 |
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