DE3789733T2 - Bipolartransistor mit bandförmigem Polysilizium-Basenkontakt. - Google Patents

Bipolartransistor mit bandförmigem Polysilizium-Basenkontakt.

Info

Publication number
DE3789733T2
DE3789733T2 DE3789733T DE3789733T DE3789733T2 DE 3789733 T2 DE3789733 T2 DE 3789733T2 DE 3789733 T DE3789733 T DE 3789733T DE 3789733 T DE3789733 T DE 3789733T DE 3789733 T2 DE3789733 T2 DE 3789733T2
Authority
DE
Germany
Prior art keywords
band
bipolar transistor
base contact
shaped polysilicon
polysilicon base
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE3789733T
Other languages
English (en)
Other versions
DE3789733D1 (de
Inventor
Madhukar B Vora
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fairchild Semiconductor Corp
Original Assignee
Fairchild Semiconductor Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fairchild Semiconductor Corp filed Critical Fairchild Semiconductor Corp
Publication of DE3789733D1 publication Critical patent/DE3789733D1/de
Application granted granted Critical
Publication of DE3789733T2 publication Critical patent/DE3789733T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76897—Formation of self-aligned vias or contact plugs, i.e. involving a lithographically uncritical step
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41708—Emitter or collector electrodes for bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42304—Base electrodes for bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66234—Bipolar junction transistors [BJT]
    • H01L29/66272—Silicon vertical transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Bipolar Transistors (AREA)
DE3789733T 1986-07-02 1987-07-01 Bipolartransistor mit bandförmigem Polysilizium-Basenkontakt. Expired - Fee Related DE3789733T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US88115586A 1986-07-02 1986-07-02

Publications (2)

Publication Number Publication Date
DE3789733D1 DE3789733D1 (de) 1994-06-09
DE3789733T2 true DE3789733T2 (de) 1994-11-03

Family

ID=25377880

Family Applications (1)

Application Number Title Priority Date Filing Date
DE3789733T Expired - Fee Related DE3789733T2 (de) 1986-07-02 1987-07-01 Bipolartransistor mit bandförmigem Polysilizium-Basenkontakt.

Country Status (5)

Country Link
EP (1) EP0251927B1 (de)
JP (1) JP2603259B2 (de)
KR (1) KR960006109B1 (de)
CA (1) CA1298921C (de)
DE (1) DE3789733T2 (de)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2623635B2 (ja) * 1988-02-16 1997-06-25 ソニー株式会社 バイポーラトランジスタ及びその製造方法
JPH0444328A (ja) * 1990-06-11 1992-02-14 Mitsubishi Electric Corp 半導体装置及びその製造方法
US5216282A (en) * 1991-10-29 1993-06-01 International Business Machines Corporation Self-aligned contact studs for semiconductor structures

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4338138A (en) * 1980-03-03 1982-07-06 International Business Machines Corporation Process for fabricating a bipolar transistor
JPS5873156A (ja) * 1981-10-28 1983-05-02 Hitachi Ltd 半導体装置
CA1252227A (en) * 1984-07-09 1989-04-04 Fairchild Camera And Instrument Corporation Self-aligned silicide base contact for bipolar transistor
CA1279410C (en) * 1986-06-06 1991-01-22 Anatoly Feygenson Submicron bipolar transistor with buried silicide region

Also Published As

Publication number Publication date
JP2603259B2 (ja) 1997-04-23
CA1298921C (en) 1992-04-14
EP0251927A3 (en) 1988-11-23
KR960006109B1 (ko) 1996-05-08
DE3789733D1 (de) 1994-06-09
EP0251927B1 (de) 1994-05-04
KR890003040A (ko) 1989-04-12
EP0251927A2 (de) 1988-01-07
JPS63146466A (ja) 1988-06-18

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee