DE3789733D1 - Bipolartransistor mit bandförmigem Polysilizium-Basenkontakt. - Google Patents
Bipolartransistor mit bandförmigem Polysilizium-Basenkontakt.Info
- Publication number
- DE3789733D1 DE3789733D1 DE3789733T DE3789733T DE3789733D1 DE 3789733 D1 DE3789733 D1 DE 3789733D1 DE 3789733 T DE3789733 T DE 3789733T DE 3789733 T DE3789733 T DE 3789733T DE 3789733 D1 DE3789733 D1 DE 3789733D1
- Authority
- DE
- Germany
- Prior art keywords
- band
- bipolar transistor
- base contact
- shaped polysilicon
- polysilicon base
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 229910021420 polycrystalline silicon Inorganic materials 0.000 title 1
- 229920005591 polysilicon Polymers 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76897—Formation of self-aligned vias or contact plugs, i.e. involving a lithographically uncritical step
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41708—Emitter or collector electrodes for bipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42304—Base electrodes for bipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66272—Silicon vertical transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US88115586A | 1986-07-02 | 1986-07-02 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE3789733D1 true DE3789733D1 (de) | 1994-06-09 |
DE3789733T2 DE3789733T2 (de) | 1994-11-03 |
Family
ID=25377880
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE3789733T Expired - Fee Related DE3789733T2 (de) | 1986-07-02 | 1987-07-01 | Bipolartransistor mit bandförmigem Polysilizium-Basenkontakt. |
Country Status (5)
Country | Link |
---|---|
EP (1) | EP0251927B1 (de) |
JP (1) | JP2603259B2 (de) |
KR (1) | KR960006109B1 (de) |
CA (1) | CA1298921C (de) |
DE (1) | DE3789733T2 (de) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2623635B2 (ja) * | 1988-02-16 | 1997-06-25 | ソニー株式会社 | バイポーラトランジスタ及びその製造方法 |
JPH0444328A (ja) * | 1990-06-11 | 1992-02-14 | Mitsubishi Electric Corp | 半導体装置及びその製造方法 |
US5216282A (en) * | 1991-10-29 | 1993-06-01 | International Business Machines Corporation | Self-aligned contact studs for semiconductor structures |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4338138A (en) * | 1980-03-03 | 1982-07-06 | International Business Machines Corporation | Process for fabricating a bipolar transistor |
JPS5873156A (ja) * | 1981-10-28 | 1983-05-02 | Hitachi Ltd | 半導体装置 |
CA1252227A (en) * | 1984-07-09 | 1989-04-04 | Fairchild Camera And Instrument Corporation | Self-aligned silicide base contact for bipolar transistor |
CA1279410C (en) * | 1986-06-06 | 1991-01-22 | Anatoly Feygenson | Submicron bipolar transistor with buried silicide region |
-
1987
- 1987-06-30 CA CA000540918A patent/CA1298921C/en not_active Expired - Fee Related
- 1987-07-01 EP EP87401516A patent/EP0251927B1/de not_active Expired - Lifetime
- 1987-07-01 DE DE3789733T patent/DE3789733T2/de not_active Expired - Fee Related
- 1987-07-02 KR KR1019870007025A patent/KR960006109B1/ko not_active IP Right Cessation
- 1987-07-02 JP JP62164105A patent/JP2603259B2/ja not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JP2603259B2 (ja) | 1997-04-23 |
CA1298921C (en) | 1992-04-14 |
EP0251927A3 (en) | 1988-11-23 |
KR960006109B1 (ko) | 1996-05-08 |
EP0251927B1 (de) | 1994-05-04 |
KR890003040A (ko) | 1989-04-12 |
EP0251927A2 (de) | 1988-01-07 |
JPS63146466A (ja) | 1988-06-18 |
DE3789733T2 (de) | 1994-11-03 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |